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Lanthanum oxide-based sintered object, sputtering target comprising the sintered object, process for producing lanthanum oxide-based sintered object, and process for sputtering target production using the process

A manufacturing method and technology of lanthanum oxide, which can be used in semiconductor/solid-state device manufacturing, sputtering, semiconductor devices, etc., and can solve problems such as difficulty in providing sputtering targets

Inactive Publication Date: 2011-06-08
JX NIPPON MINING & METALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, in the production of La 2 o 3 In the case of films, it is very difficult to provide a sputtering target that can withstand practical applications

Method used

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  • Lanthanum oxide-based sintered object, sputtering target comprising the sintered object, process for producing lanthanum oxide-based sintered object, and process for sputtering target production using the process
  • Lanthanum oxide-based sintered object, sputtering target comprising the sintered object, process for producing lanthanum oxide-based sintered object, and process for sputtering target production using the process

Examples

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Embodiment

[0060] Examples are described below. In addition, this example is only for easy understanding of the present invention, and does not limit the present invention. That is, other embodiments and modifications within the scope of the technical concept of the present invention are also included in the present invention. In addition, in the following content, although the example given as a reference example is not sufficient from the objective of this application, the characteristic improvement similar to the invention of this application was observed. Regarding Comparative Example 1, it is described in lines 22 to 26 on page 22.

[0061] (reference example 1-3, embodiment 1-25)

[0062] Using La2(CO 3 ) 3 Powder and HfO 2 , ZrO 2 、TiO 2 Powder As a raw material powder, the raw material powder is blended so that the amount of Hf, Zr, and Ti is 0.5 mol % to 49 mol % with respect to the total amount of metal components including La, and mixed using a wet ball mill. This mixe...

reference example 1

[0069] The composite oxide sintered body of Reference Example 1 contained 0.5 mol% of hafnium in terms of the metal of the composite oxide sintered body (lanthanum oxide and hafnium oxide), that is, contained Hf in terms of mol% of Hf / (La+Hf). 0.5%. The same applies to other reference examples and examples below. In addition, for reference only, based on the mole % of Hf / (La+Hf), containing 50 mole % of Hf as La 2 f 2 o 7 The composition of La 2 o 3 33.3 mol%, HfO 2 It is 66.7 mol%.

[0070] The carbon content is 35 ppm, the hydrogen is 29 ppm, the relative density is 95%, the maximum particle size is 41 μm, and the average particle size is 12 μm. At this time, HfO 2 The amount is slightly less than the preferred conditions of the present invention, the carbon content is slightly more than the preferred conditions of the present invention, and the relative density is lower, being 95%. As a result, the sintered body disintegrated into a powder form after 3 weeks in the...

reference example 2

[0073] The composite oxide sintered body of Reference Example 2, in terms of metal, ZrO 2 It contains 0.5 mol% in conversion of Zr. The carbon content is 23 ppm, the hydrogen is 19 ppm, the relative density is 97%, the maximum particle diameter is 37 μm, and the average particle diameter is 9 μm. At this time, ZrO 2 The amount is slightly less than the preferred condition of the present invention, but the relative density is slightly higher, which is 97%. As a result, the sintered body disintegrated into a powder form after 4 weeks in the air. There are some improvements over Reference Example 1.

[0074] However, in vacuum packaging, no powdering of the surface was observed during 4 months. The sintered body at this level has a slightly higher disintegration speed, but it can be said to be in the range of practical application level if vacuum packaging is used. The evaluation was Δ.

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Abstract

A lanthanum oxide-based sintered object which comprises lanthanum oxide as a basic component, the sintered object containing one or more of titanium oxide, zirconium oxide, and hafnium oxide, with the remainder being lanthanum oxide and incidental impurities. A process for producing a lanthanum oxide-based sintered object is provided which comprises: using an La2(CO3)3 powder or La2O3 powder as a lanthanum oxide source powder and one or more of TiO2, ZrO2, and HfO2 powders as an additive oxide; mixing the powders so that the proportion of the metallic component of each additive oxide becomes a given value in terms of metal amount; thereafter heating the powder mixture in the air to conduct synthesis; subsequently pulverizing the synthesized material into a powder; and then hot-pressing the synthesis powder to form a sintered object. The sintered object is prevented from combining with water or carbon dioxide gas to form a hydroxide, etc. and thereby changing to a powder, and can be stored for long. Also provided is a technique in which an oxide for use as a high-k gate insulating film can be efficiently and stably provided by conducting film deposition using the sputtering target.

Description

technical field [0001] The present invention relates to a lanthanum oxide-based sintered body that uses lanthanum oxide (La) as a basic component and contains an added oxide composed of one or more of titanium (Ti), zirconium (Zr), and hafnium (Hf). A sputtering target for a sintered body, a method for manufacturing a lanthanum oxide-based sintered body, and a method for manufacturing a sputtering target by the manufacturing method. Background technique [0002] Recently, as the gate insulating film in next-generation MOSFETs, thinning is required, but SiO, which has been used as the gate insulating film so far 2 , the leakage current increases through the tunnel effect, making it difficult to work normally. [0003] Therefore, as a substitute for SiO 2 As a material, HfO with high dielectric constant, high thermal stability, and high energy barrier to holes and electrons in silicon was proposed 2 , ZrO 2 、Al 2 o 3 , La 2 o 3 And other so-called High-K materials. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/50C04B35/00C23C14/34
CPCC04B2235/6581C04B2235/786C04B2235/721C23C14/3414C04B2235/9669H01L21/02186C04B35/50H01L29/517C04B2235/656H01L21/02189C23C14/08H01L21/02194C04B2235/3232H01L21/02181C04B2235/77H01L21/28194C04B2235/3227C04B2235/782H01L21/02266C04B35/49C04B2235/3244C04B35/645C04B2235/442H01L21/02192C04B35/486C04B35/462C23C14/34C04B35/00
Inventor 佐藤和幸小井土由将
Owner JX NIPPON MINING & METALS CORP
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