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Laser crystal, growth device and method thereof and laser working element prepared from crystal

A technology of working components and laser crystals, which is applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of small crystal diameter and short life, and achieve the effect of small size

Active Publication Date: 2012-10-10
HUNAN RARE EARTH METAL MATERIAL RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problems of small crystal diameter and short life in the prior art, the present invention provides a laser crystal, a device and method for preparing the crystal, and a laser working element prepared by using the crystal

Method used

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  • Laser crystal, growth device and method thereof and laser working element prepared from crystal
  • Laser crystal, growth device and method thereof and laser working element prepared from crystal
  • Laser crystal, growth device and method thereof and laser working element prepared from crystal

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0044] 4. Preparation of laser working elements

[0045] The crystal obtained by the above preparation process is subjected to the steps of sample shape selection design, crystal post-processing, crystal quality preliminary inspection, crystal processing, laser working element quality inspection, crystal coating, working element performance testing and other steps to complete the laser working element preparation process.

[0046] Sample shape selection design: select the crystal blank according to the shape and size required by the user, cut off the head and tail of the crystal in parallel, grind and polish the two cutting surfaces, and then observe the stress distribution in the crystal on the stress meter; Polished crystals are cut into pieces in the shape and size required by the user.

[0047] Crystal post-processing: (Tm,Ho): YAG crystals are in an inert atmosphere during the whole process of growth. Under high temperature conditions, the crystal is often deficient in o...

Embodiment 1

[0063] Preparation of high-purity Tm by "warming and pressing" ion exchange technology 2 O 3 , Ho 2 O 3 The raw material, the resin used is cation exchange resin, the multi-component column is two adsorption columns and four separation columns, the eluent is EDTA, and the high-purity rare earth product obtained under the working pressure of 6MPa has a purity of 99.9992% after ICP-MS detection. . .

[0064] The high-purity raw materials are prepared according to the mass ratio Y 2 O 3 :Tm 2 O 3 :Ho 2 O 3 :Al 2 O 3 =2406:700:17:2127, so that the rare earth raw material and Al 2 O 3 The molar ratio is strictly controlled to 3:5, and the final doping concentration is Tm:2×10 21 , Ho: 5×10 19 Pieces / cm 3 , Put the weighed raw materials into the grinder and grind for 24 hours, then put it into a latex bag, and add it to the hydraulic press for pre-compression.

[0065] The pre-pressed raw material is loaded into the crucible, and then placed in a crucible such as ...

Embodiment 2 and Embodiment 3

[0075] The preparation method is similar to that of Example 1, except that the ratio of raw materials is different, and the crystal pulling speed, crystal rotation speed, and gas pressure in the furnace are different. Crystal samples 2 and 3 are obtained. The specific ratios and growth parameters are shown in Table 1:

[0076] Table 1

[0077]

[0078]

[0079] From the above description, it can be concluded that the laser crystal provided by the present invention has the advantages of larger crystal volume and longer life; the provided crystal preparation equipment establishes a reasonable temperature field, and realizes the comprehensive matching design of crystal growth parameters. That is, it not only maintains the high stability of the mechanical transmission system, but also ensures that the temperature control system has high precision (fluctuation is less than ±1°C); the method provided by the present invention has the advantages of being easy to operate and suita...

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Abstract

The invention discloses a thulium / holmium-doped yttrium aluminum garnet crystal, a growth device and method for preparing the crystal and a laser working element prepared from the crystal. The chemical formula of the crystal is Tm, Ho: Y3Al5O12, and the crystal is a cubic one of which the space group is Ia3d, wherein the thulium doping concentration is 1.99-2.01*10<21> / cm<3>, and the holmium doping concentration is 5.00-5.05*10<19> / cm<3>. The crystal provided by the invention solves the problems of short service life of the existing crystal, and small diameter, short service life, uneven optical quality and high cracking possibility of the blank. The laser working element prepared from the crystal solves the defects of small dimension and instable performance of the existing working element.

Description

technical field [0001] The invention relates to the field of laser crystals, in particular to a yttrium aluminum garnet crystal laser doped with thulium and holmium, a growth device and method for preparing the laser crystal, and a laser working element prepared by using the crystal. Background technique [0002] Laser crystal is a crystal material that can convert the energy provided by the outside world into a highly parallel and monochromatic laser that is coherent in space and time through an optical resonant cavity, and is the working substance of a crystal laser. The laser crystal consists of two parts: the luminescent center and the host crystal. Most of the luminescent centers of laser crystals are composed of activated ions, which partially replace cations in the host crystal to form doped laser crystals. A self-activating laser crystal is formed when the active ions become part of the host crystal composition. [0003] The active ions used in laser crystals are m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/28C30B27/02
Inventor 黄美松翁国庆吕小春蔡刚锋邬晔高娅娜余强国黄蓉王志坚
Owner HUNAN RARE EARTH METAL MATERIAL RES INST