High-efficiency mid-infrared laser crystal Pr, Er:YSGG and preparation method thereof
An infrared laser and crystal technology, applied in crystal growth, chemical instruments and methods, single crystal growth, etc.
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Embodiment 1
[0020] Example 1: Growth of high Er-doped 3+ Ionic concentrations of Pr, Er:YSGG crystals
[0021] Highly doped Er 3+ Ionic concentrations of Pr, Er: YSGG crystals refer to Er 3+ The doping concentration of ions is between 30-50at%, Pr 3+ The concentration is between 0.5-5at%. For example Er 3+ Concentration is 35at%, Pr 3+ The concentration is 2at%. Polycrystalline raw materials prepared by solid-phase method or liquid-phase method can grow highly Er-doped 3+ Pr,Er:YSGG single crystal.
[0022] The solid phase method is according to the following chemical reaction formula:
[0023] 3xPr 2 o 3 +3yEr 2 o 3 +3(1-x-y)Y 2 o 3 +2Sc 2 o 3 +3Ga 2 o 3 =2Pr 3x Er 3y Y (3-3x-3y) sc 2 Ga 3 o 12 , wherein x=0.5-5at%, y=30-50at%, the polycrystalline raw material of the crystal is obtained by a solid-state reaction method;
Embodiment 2
[0024] Example 2: An experimental device for realizing Pr, Er: YSGG crystal 2.7-2.8 μm band laser output
[0025] Using 965nm semiconductor laser to pump Pr, Er:YSGG(Pr 3+ The doping concentration is 2at%, Er 3+ Doping concentration of 35at%) crystal components. The experimental device is attached figure 1 . In the figure, 1 is a 965nm semiconductor laser; 2 is a focusing lens; 3 is a dielectric mirror that fully reflects the 2.7-2.8μm band and fully transmits the 965nm; 4 is the Pr, Er: YSGG crystal element; 5 is the 2.7-2.8μm band Partially transmitted, fully reflective dielectric mirror at 965nm; 6 laser energy meters. Since the wavelength around 2.7-2.8μm is in the strong absorption band of water, in this laser experimental device, it is also necessary to exclude water vapor in the resonant cavity or shorten the resonant cavity to reduce the adverse effect of water vapor on laser oscillation.
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