Phase-change storage material and preparation method thereof

A technology of phase change storage and radio frequency power, which is applied in the field of phase change storage materials and its preparation, can solve the problems of low crystallization temperature, non-environmental protection, restrictions, etc., and achieve the effect of simple components and good compatibility

Active Publication Date: 2013-03-27
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although Ge 2 Sb 2 Te 5 It has outstanding performance in terms of thermal stability and reading and writing speed, but it also faces severe problems: First, the crystallization temperature of the material is relatively low (about 165°C), although the Ge 2 Sb 2 Te 5 The memory data can be kept at 110°C for 10 years, but the memory still faces the risk of data loss at high temperatures; secondly, the tellurium in the material has a negative impact on the human body and the environment, and is not environmentally friendly; in addition, due to the Low melting point, low vapor pressure, easy to produce volatilization in the high temperature preparation process, its pollution to the semiconductor process is currently unknown, and it poses a certain threat to the semiconductor production line, so it greatly limits and hinders the development and development of tellurium-containing phase change memory. research; finally, the Ge-Sb-Te material is an alloy of three elements, and each element has different chemical and physical properties, which brings inconvenience to subsequent processes such as microfabrication

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  • Phase-change storage material and preparation method thereof
  • Phase-change storage material and preparation method thereof

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Embodiment 1

[0027] This embodiment provides a phase-change memory material, which includes an aluminum-antimony binary material whose composition formula is Al x Sb 1-x , where x is the atomic percentage of aluminum element, and 0

[0028] The phase-change storage material is a material that changes reversibly under the action of external energy, and the external energy action includes electric drive, laser pulse drive or electronic drive. The aluminum-antimony binary material Al x Sb 1-x In the case of applying an electric pulse signal, a reversible switch between a high-resistance state and a low-resistance state will occur, which has the characteristics of reversible conversion between a high-resistance state and a low-resistance state, and can be used to realize data storag...

Embodiment 2

[0031] This embodiment provides a method for preparing the phase-change memory material described in Embodiment 1. The preparation method is to prepare Al by double-target magnetron co-sputtering. x Sb 1-x Thin film, specifically comprises the following steps:

[0032] 1. First prepare Al targets and Sb targets with a diameter of 75mm and a thickness of 5mm, and the purity of the targets is 99.999% (atomic percentage);

[0033] 2. Then adopt the method of double-target magnetron co-sputtering, and simultaneously feed Ar gas with a purity of 99.999% during the co-sputtering process; the specific process parameters are as follows:

[0034] 1) Al target adopts radio frequency power supply;

[0035] 2) The Sb target adopts a DC power supply, and the power of the Sb target is selected as 25W;

[0036] 3) Sputtering gas pressure is 0.26Pa.

[0037] Utilize the preparation method of the phase-change memory material described in this embodiment, can obtain the Al of different sput...

Embodiment 3

[0042] This embodiment is aimed at the two-component aluminum-antimony binary material Al0.2 Sb 0.98 and Al 0.18 Sb 0.82 Conduct temperature-resistance (R-T) test, the test results are as follows figure 1 and figure 2 shown.

[0043] figure 1 It is the curve (R-T) of the resistance of the aluminum-antimony binary material with an aluminum content of 2 atomic percent as a function of temperature (R-T), wherein the solid curve is the heating process, and the hollow curve is the cooling process. Depend on figure 1 It can be seen that when the aluminum content in the alloy material is 2 atomic percent, the resistance of the material decreases as the temperature rises, and drops sharply when the temperature is around 480K. The R-T test shows that the aluminum-antimony binary material Al 0.2 Sb 0.98 The crystallization temperature is about 480K, and the difference between high and low resistivity reaches two orders of magnitude.

[0044] figure 2 It is the curve (R-T) of...

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Abstract

The invention discloses a phase-change storage material and a preparation method thereof. The phase-change storage material comprises an antimony and aluminium binary material with the composition formula of AlxSb1-x, wherein x is more than 0 and is less than 1. The phase-change storage material also comprises a doping material for doping the antimony and aluminium binary material, the doping material is one or more of oxygen, nitrogen, boron, silicon and germanium, and the atom percent of the aluminium material in the phase-change storage material is 1-20%. The antimony and aluminium binary material disclosed by the invention has the advantage of simple component, does not contain toxic elements, has good compatibility with the manufacturing technology of a complementary metal-oxide-semiconductor transistor (CMOS) device and is a environmentally-friendly storage material which can be used in a phase-change memory.

Description

technical field [0001] The invention belongs to the field of storage materials, and relates to a phase-change storage material and a preparation method thereof. Background technique [0002] The research of phase-change memory is a hotspot in memory research at present, and has a broad market prospect. Existing phase-change memories are roughly divided into two categories, one is the commercialized multimedia data disc (DVD), and the other is the chalcogenide random access memory (C-RAM) under research. C-RAM has the advantages of high speed, high density, simple structure, low cost, radiation resistance, and non-volatility. It is a strong competitor for the next-generation memory that is widely expected at present, and it will replace the widely used flash memory. It occupies an important position in the field of electronic memory, so its research and development has attracted the attention of major semiconductor companies around the world. [0003] During the research an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
Inventor 李学来饶峰宋志棠任堃吴良才刘波刘卫丽
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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