Method for preparing copper-indium-gallium-selenium thin film serving as light absorbing layer of solar cell

A technology of solar cells and copper indium gallium selenide, which is applied in coatings, circuits, electrical components, etc., can solve the problems of potential safety hazards, uneven distribution of selenium, and reduced utilization of selenium, so as to reduce production costs and simplify the preparation process , The effect of component segregation improvement

Inactive Publication Date: 2011-08-17
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The control process of this multi-target sputtering method is relatively complicated. The introduction of Se must go through the subsequent selenization annealing p

Method used

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  • Method for preparing copper-indium-gallium-selenium thin film serving as light absorbing layer of solar cell
  • Method for preparing copper-indium-gallium-selenium thin film serving as light absorbing layer of solar cell
  • Method for preparing copper-indium-gallium-selenium thin film serving as light absorbing layer of solar cell

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Example Embodiment

[0030] Implementation case 1

[0031] The preparation method of the copper indium gallium selenium film used as the light absorption layer of the solar cell is as follows:

[0032] (1) Install Mo target and CIGS target in the magnetron sputtering chamber, and install the cleaned soda lime glass substrate, and then vacuumize the chamber to 1×10 -3 Below Pa, add 99.999% high-purity Ar gas, and use a DC power supply to sputter a double-layer Mo film with a total thickness of 0.5μm on the substrate. The sputtering conditions are: the substrate rotation speed is 12rpm, and the substrate temperature is 550 ℃, the target base distance is 9cm, the flow of Ar gas is 100SCCM, the current of the DC power supply is 0.6A, the voltage is 210V, the sputtering pressure of the first layer of Mo is 2Pa, the corresponding sputtering time is 10min, the second layer of Mo The sputtering pressure is 1Pa, and the corresponding sputtering time is 10min;

[0033] (2) After the Mo layer is prepared, use the ...

Example Embodiment

[0036] Implementation case 2

[0037] The preparation method of the copper indium gallium selenium film used as the light absorption layer of the solar cell is as follows:

[0038] (1) Install Mo target and CIGS target in the magnetron sputtering chamber, and install the cleaned soda lime glass substrate, and then vacuumize the chamber to 1×10 -3 Below Pa, add 99.999% high-purity Ar gas, and use a DC power supply to sputter a double-layer Mo film with a total thickness of 0.5μm on the substrate. The sputtering conditions are: the substrate rotation speed is 12rpm and the substrate temperature is 100 ℃, target base distance is 9cm, Ar gas flow rate is 100SCCM, DC power supply current is 0.4A, voltage is 140V, the sputtering pressure of the first layer of Mo is 3Pa, the corresponding sputtering time is 5min, the second layer of Mo The sputtering pressure is 0.5Pa, and the corresponding sputtering time is 15min;

[0039] (2) After the Mo layer is prepared, use the radio frequency power...

Example Embodiment

[0042] Implementation case 3

[0043] The preparation method of the copper indium gallium selenium film used as the light absorption layer of the solar cell is as follows:

[0044] (1) Install Mo target and CIGS target in the magnetron sputtering chamber, and install the cleaned soda lime glass substrate, and then vacuumize the chamber to 1×10 -3 Below Pa, add 99.999% high-purity Ar gas, and use a DC power supply to sputter a double-layer Mo film with a total thickness of 0.5μm on the substrate. The sputtering conditions are: the substrate rotation speed is 8rpm, and the substrate temperature is 450 ℃, the target base distance is 9cm, the flow of Ar gas is 100SCCM, the current of the DC power supply is 0.6A, the voltage is 210V, the sputtering pressure of the first layer of Mo is 2Pa, the corresponding sputtering time is 10min, the second layer of Mo The sputtering pressure is 0.2Pa, and the corresponding sputtering time is 15min;

[0045] (2) After the Mo layer is prepared, use the...

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Abstract

The invention relates to a method for preparing a copper-indium-gallium-selenium thin film. The method is characterized in that: a copper-indium-gallium-selenium single-target magnetron sputtering and selenized annealing process is used. The method comprises the following steps of: arranging a Mo target and a CuIn0.75Ga0.25Se2 target in a magnetron sputtering cavity; sputtering double-layer Mo by using a direct-current power supply; sputtering a copper-indium-gallium-selenium prearranged layer by using a radio frequency power supply; and performing selenized annealing on the prearranged layer in a tubular furnace by using an elemental Se source in an Ar airflow so as to obtain the copper-indium-gallium-selenium thin film. The copper-indium-gallium-selenium thin film has a chalcopyrite phase structure and can be used as a light absorbing layer of a thin film solar cell. The method provided by the invention has the advantages of simple process and low cost, contributes to environmental friendliness and is suitable for large-area preparation.

Description

technical field [0001] This article relates to the preparation of light-absorbing layers in the field of thin-film solar cells, in particular to the preparation of light-absorbing layers in copper indium gallium selenium thin film solar cells. Background technique [0002] Solar energy is considered to be one of the cleanest and most environmentally friendly energy sources in the 21st century, which is inexhaustible and inexhaustible. Copper indium gallium selenide thin-film solar cells are considered to be one of the most competitive thin-film solar cells in the next generation due to their high conversion efficiency (19.9%), low cost, excellent anti-irradiation characteristics and weak light characteristics. First, the preparation technology of the light absorbing layer is the core technology of copper indium gallium selenide thin film solar cells. [0003] At present, the preparation of copper indium gallium selenide light absorbing layer mainly includes the following me...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/58C23C14/06H01L31/18
CPCY02P70/50
Inventor 李晶泽周爱军孔祥刚梅迪王影
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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