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Method of preparing patterned BiFeO3 film on surface of functional Si substrate

A substrate surface and patterning technology, applied in the direction of spin-exchange coupled multilayer film, substrate/intermediate layer, magnetic film to substrate, etc., achieves the effect of simple preparation process, clear edge outline, and broad application prospects

Inactive Publication Date: 2011-08-24
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Compared with other methods, the Sol-gel method is widely used to prepare ferroelectric materials because it does not require expensive vacuum equipment, is suitable for preparing thin films on large surfaces and irregularly shaped surfaces, and has precise controllable chemical components. , but for the preparation of BiFeO on (111) Si substrates by using the sol-gel method combined with the self-assembled monolayer technology 3 The research report of patterned thin film has not been seen yet, so it is of great research value

Method used

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  • Method of preparing patterned BiFeO3 film on surface of functional Si substrate
  • Method of preparing patterned BiFeO3 film on surface of functional Si substrate
  • Method of preparing patterned BiFeO3 film on surface of functional Si substrate

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Experimental program
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Effect test

Embodiment 1

[0029] (1) Select (111) Si substrate as the substrate, place the cut Si substrate in commercially available detergent, acetone, and ethanol for ultrasonic cleaning for 10 min each to remove impurities such as grease on the surface of the Si substrate; After cleaning, rinse the substrate with a large amount of distilled water, and finally dry it with nitrogen. Place the clean Si substrate in a UV irradiator for 20 minutes to make the surface of the substrate reach "atomic cleanliness".

[0030] (2) Rapidly immerse the Si substrate irradiated by ultraviolet light into a newly prepared 1vol% octadecyltrichlorosilane (OTS)-toluene solution, and soak it for 30 minutes at room temperature to form a layer on the surface of the substrate OTS monomolecular film; after soaking, clean the Si substrate in acetone for 2 minutes, and then place it at 120°C for 5 minutes to remove residual organic matter and promote the chemical adsorption of OTS-SAMs. Then, the OTS-SAMs matrix is ​​covered...

Embodiment 2

[0038] (1) Select (111) Si substrate as the substrate, place the cut Si substrate in commercially available detergent, acetone, and ethanol for ultrasonic cleaning for 10 min each to remove impurities such as grease on the surface of the Si substrate; After cleaning, rinse the substrate with a large amount of distilled water, and finally dry it with nitrogen. Place the clean Si substrate in a UV irradiator and irradiate it for 10 minutes to make the surface of the substrate reach "atomic cleanliness".

[0039] (2) Rapidly immerse the Si substrate irradiated by ultraviolet light into a newly prepared 1vol% octadecyltrichlorosilane (OTS)-toluene solution, and soak it for 20 minutes at room temperature to form a layer on the surface of the substrate OTS monomolecular film; after soaking, the Si substrate was cleaned in acetone for 3 minutes, and then placed at 110°C for 3 minutes to remove residual organic matter and promote chemical adsorption of OTS-SAMs. Then, the OTS-SAMs ma...

Embodiment 3

[0044] (1) Select (111) Si substrate as the substrate, place the cut Si substrate in commercially available detergent, acetone, and ethanol for ultrasonic cleaning for 10 min each to remove impurities such as grease on the surface of the Si substrate; After cleaning, rinse the substrate with a large amount of distilled water, and finally dry it with nitrogen. Place the clean Si substrate in a UV irradiator and irradiate it for 15 minutes to make the surface of the substrate reach "atomic cleanliness".

[0045] (2) Rapidly immerse the Si substrate irradiated by ultraviolet light into a newly prepared 1vol% octadecyltrichlorosilane (OTS)-toluene solution, and soak it for 40 minutes at room temperature to form a layer on the surface of the substrate OTS monomolecular film; after soaking, the Si substrate was cleaned in acetone for 3 minutes, and then placed at 130°C for 4 minutes to remove residual organic matter and promote chemical adsorption of OTS-SAMs. Then, the OTS-SAMs ma...

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Abstract

The invention discloses a method of preparing a patterned BiFeO3 film on a surface of a functional Si substrate. The method comprises the following steps: 1) with an Si substrate as a base, cutting the Si substrate, and then performing ultrasonic cleaning, drying, and irradiation in an ultraviolet light irradiation instrument, respectively; 2) immersing the substrate irradiated by ultraviolet light in OTS-toluene solution to form an OTS monomolecular film on the surface of the substrate, cleaning, preserving heat, and irradiating by ultraviolet light to obtain a patterned BiFeO3 film; 3) preparing BiFeO3 precursor solution, placing the OTS-SAMs matrix of the patterned BiFeO3 film in the prepared precursor solution, preparing a film by Czochralski method, drying the sample film, pre-treating under high temperature, heating, and preserving heat under high temperature to obtain the patterned BiFeO3 film on the surface of the Si substrate. The method provided by the invention combines sol-gel method and photoetching self-assembled monolayers technology to obtain a clearly patterned BiFeO3 film on the surface of the Si substrate. The film has the following advantages: the surface is compact and uniform, the edge contour is clear, and the film is firmly bonded to the substrate.

Description

technical field [0001] The invention relates to a magnetic sensor and BiFeO used in a capacitance-inductance integrated device 3 Thin films, especially a patterned BiFeO on the surface of a functionalized (111) Si substrate 3 thin film method. Background technique [0002] A ferromagnetic material is a material that results in the coexistence of ferroelectricity and magnetism due to the order of structural parameters and has magnetoelectric coupling properties. In recent years, a new type of ferromagnetic electric material BiFeO 3 aroused great interest. BiFeO 3 The simple perovskite structure with trigonal twist has two structural orders at room temperature, namely ferroelectric order (TC=810°C) and G-type antiferromagnetic order (TN=380°C), which is one of the few It is one of the single-phase ferromagnetic materials with both ferroelectricity and magnetism. BiFeO 3 A magnetic field can be generated by an electric field, and a magnetic field can also induce electric...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F10/32H01F41/14B82Y40/00
Inventor 谈国强王艳任宣儒宋亚玉
Owner SHAANXI UNIV OF SCI & TECH