High-purity copper or high-purity copper alloy sputtering target, process for manufacturing the sputtering target, and high-purity copper or high-purity copper alloy sputtered film

Abstract

A high-purity copper or high-purity copper alloy sputtering target which has a purity of 6N or higher and in which the contents of P, S, O, and C are each 1ppm or lower, characterized in that the content of non-metallic inclusions having particle diameters of 0.5 to 20[mu]m is 30,000 pieces / g or lower. The rejection rate of wirings of semiconductor devices, said wirings being formed by sputtering a high-purity copper target, is lowered with high reproducibility by using, as the raw material, high-purity copper and / or a high-purity copper alloy which have a reduced content of harmful P, S, C and O type inclusions, and thus controlling the form of existence of non-metallic inclusions.

Description

technical field [0001] The present invention relates to a high-purity copper or high-purity copper alloy sputtering target, a method for manufacturing the sputtering target, and a high-purity copper or high-purity copper alloy sputtering film. In addition, % and ppm used in this specification mean % by mass and ppm by mass, respectively. In addition, the purity means purity other than gas components C, O, N, and H. Background technique [0002] In the past, when aiming at producing high-purity copper or high-purity copper alloy targets, emphasis has been placed on removing metal elements and non-metallic elements other than copper or alloy components that are mainly recognized as impurities, or limiting gas components to a few A certain amount such as ppm to several hundred ppm. [0003] Therefore, regarding the trace amount of inclusions present in high-purity copper or high-purity copper alloy targets, no attention has been paid to them, and studies to remove or reduce t...

AI Technical Summary

Problems solved by technology

[0029] In Patent Document 12, it is described that a high-purity copper or copper alloy sputtering target has an oxygen content of 100 ppm or less, a carbon content of 150 ppm or less, a nitrogen content of 50 ppm or less, and a sulfur content of 200 ppm or less, or sputtering from the target surface. In the ultrasonic flaw detection inspection, the displayed number of flat-bottomed holes with a diameter of 0.5 mm or more is 0.014 pieces / cm 2 In the following, a method for manufacturing a high-purity copper or copper alloy sputtering target with an oxygen content of 100 ppm or less, a carbon content of 150 ppm or less, a nitrogen content of 50 ppm or less, and a sulfur content of 200 ppm or less is described. Electron beam melting or vacuum induction shell melting are used to melt cast high-purity copper or copper alloy ingots, however, inclusions of a magnitude detectable by ultrasonic flaw detection have not been observed in current high-purity copper targets