Large-area preparation method for zinc oxide nanorod array

A zinc oxide nanorod, large-area technology, applied in the direction of zinc oxide/zinc hydroxide, metal material coating process, coating, etc., can solve the problems of high cost and poor production repeatability of zinc oxide nanorod arrays, and achieve improved Reproducible, low-cost, and simple-to-operate results

Inactive Publication Date: 2013-03-13
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing zinc oxide nanorod arrays with good orientation and high density in a large area, so as to solve the problem of the high cost of producing zinc oxide nanorod arrays and the need for catalysts and templates or gas-phase zinc oxide transition layers. Assisted growth, poor production repeatability and other issues

Method used

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  • Large-area preparation method for zinc oxide nanorod array
  • Large-area preparation method for zinc oxide nanorod array
  • Large-area preparation method for zinc oxide nanorod array

Examples

Experimental program
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Effect test

Embodiment 1

[0031] The method for preparing a large-area zinc oxide nanorod array with good orientation and high density includes four steps of configuring sol, cleaning substrate, dipping-pulling coating and crystallization heat treatment. Zinc acetate dihydrate (C 4 h 6 o 4 Zn 2(H 2 O)) and equimolar ratio of monoethanolamine (C 2 h 7 NO) was dissolved in ethylene glycol methyl ether and stirred at 65°C for 30 minutes, then a small amount of aluminum chloride hexahydrate (AlCl 3 ·6H 2 O) put into this solution, continue to stir for 10min to obtain clear pale yellow sol. The concentration of zinc acetate dihydrate in ethylene glycol methyl ether is 1.5 mol / L, and the molar ratio of zinc acetate dihydrate to aluminum chloride hexahydrate is 96:4. A glass slide (soda-lime-glass) with a surface size of 25×76mm was put into acetone-distilled water-absolute ethanol-distilled water in sequence for ultrasonic cleaning for 10 minutes, and dried and stored after cleaning. The substrate is...

Embodiment 2

[0033] According to the preparation method of Example 1, as long as the pulling speed is increased from 1.2 cm / min to 2.4 cm / min, an array of zinc oxide nanorods with a diameter of 85 nm, a length of 450 nm, and an aspect ratio of 5 is prepared.

Embodiment 3

[0035] According to the preparation method of Example 1, as long as the pulling speed is increased from 1.2 cm / min to 6.0 cm / min, an array of zinc oxide nanorods with a diameter of 85 nm, a length of 600 nm, and an aspect ratio of 7 is prepared.

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Abstract

The invention belongs to the technical field of zinc oxide nanorod array preparation, and particularly relates to a large-area preparation method for a zinc oxide nanorod array with good orientation and high compactness, which comprises the following steps of preparing a sol, cleaning a substrate, dip-coating and carrying out crystallizing heat treatment. The invention adopts a sol-gel method to directly prepare the zinc oxide nanorod array with good orientation and high compactness on the substrate in a large area without a catalyst or a template, greatly lowers actual production cost and improves process repeatability. The invention can solve the problems of high cost, adoption of the catalyst and the template or a gas-phase zinc oxide transition layer to aid growth, poor production repeatability and the like in existing zinc oxide nanorod array production methods. By using a simple method, the invention directly grow the zinc oxide nanorod array with an ordered array, a uniform structure and high compactness on the substrate in a large area, and the draw ratio of the zinc oxide nanorod is effectively controlled through adjusting dip-coating speed.

Description

technical field [0001] The invention belongs to the technical field of preparation of zinc oxide nanorod arrays, in particular to a method for preparing zinc oxide nanorod arrays with good orientation and high density in a large area. Background technique [0002] ZnO is a direct transition, wide bandgap semiconductor material (E g =3.37eV), has high exciton binding energy (60meV) at room temperature, is transparent in the visible light range, and properly doped zinc oxide has considerable electrical properties. At the same time, zinc oxide is also non-toxic, good stability, and low cost. And other advantages, can be used in transparent conductive films, gas sensors, field effect transistors, ultraviolet detectors, etc. One-dimensional semiconducting ZnO materials have attracted much attention due to their unique physical properties and their great potential in optoelectronic devices. In 2001, Yang Peidong's group (M.H.Huang, S.Mao, H.Feich, H.Yan, Y.Wu, H.Kind, E.Weber, R...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C26/00C01G9/02
Inventor 孙超黄楠朱明伟宫骏裴志亮华伟刚肖金泉
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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