Stripping liquid as well as preparation method and application

A technology of stripping liquid and organic solvent, which is applied in the field of stripping liquid and its preparation, can solve the problems of weak stripping performance, surface metal ion pollution, complex production process, etc., and achieve the effect of low corrosion and less corrosion

Active Publication Date: 2012-08-22
HEFEI MAOTENG ENVIRONMENTAL PROTECTION TECH CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these existing effective stripping solutions have the following problems: 1. Environmental safety is involved, such as waste liquid treatment; 2. The stripping performance is weak and has a great impact on wiring corrosion; 3. The amount of residual metal ions after cleaning exceeds the standard requirements. It is easy to cause surface metal ion pollution; 4. The production process is complicated

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Stripping liquid as well as preparation method and application
  • Stripping liquid as well as preparation method and application
  • Stripping liquid as well as preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] Trimethyl allyl ammonium hydroxide (AM1) 5 grams, glycol ethers water-soluble organic solvent ethylene glycol monomethyl ether (EM) 15 grams, non-amine water-soluble organic solvent dimethyl sulfoxide ( DMSO) 20 grams, metal chelating agent ethylenediaminetetraacetic acid (EDTA) 1 gram, preservative sorbitol (SRB) 0.5 grams and resistivity 20 megohms, total metal ion concentration is 58.5 grams of water of 50ug / L in Mix at room temperature to obtain the stripping solution provided by the present invention.

[0055] Among them, the water quality standards of the water used are shown in Table 3:

[0056] Table 3. Water Quality Standards

[0057] project

[0058] sodium

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a stripping liquid as well as a preparation method and an application. The stripping liquid comprises quaternary ammonium hydroxide, a non-amine water soluble organic solvent, a metal chelating agent, a preservative, water and at least one of the following organic solvents: a dihydric alcohol water soluble organic solvent and a binary alcohol ether water soluble organic solvent. By using the stripping liquid, a photoresist can be fast and completely stripped, and less corrosive effects on wiring materials and other materials are generated. Even though the stripped photoresist is bleached by the water after being treated, no precipitation of insoluble substances can be caused and high safety is obtained for the environment and the human body. By using the stripping liquid, a photoresist pattern on the photoresist which is deteriorated in a wet etching procedure can be effectively stripped, the extremely low corrosiveness is obtained for inorganic material substances like metal films and oxidation films forming an image forming liquid crystal panel and a semiconductor element, and an important application value is also obtained.

Description

technical field [0001] The invention relates to a stripping liquid and its preparation method and application. Background technique [0002] In the production technology of semiconductor elements or liquid crystal display elements, it usually includes sequentially performing on the semiconductor substrate or glass substrate: the metal wiring formation process of setting a metal or metal oxide layer; the process of setting a photoresist layer; The exposure process of transferring the mask pattern on the resist; the etching process of etching the mold according to the pattern; and the stripping process of removing the photoresist. Photoresist stripping is a chemical reaction between the stripper and the photoresist, which swells, softens and dissolves the photoresist. [0003] However, in recent years, in the component manufacturing process of semiconductor elements and liquid crystal elements, the trend of ultra-micronization of patterns caused by high-definition and high-in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/42
Inventor 冯卫文
Owner HEFEI MAOTENG ENVIRONMENTAL PROTECTION TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products