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Hardmask composition with improved storage stability for forming resist underlayer film

A kind of hard mask and composition technology, applied in the direction of coating, pattern surface photoengraving process, instruments, etc., can solve the problem of being difficult to be used to synthesize polymers, etc., and achieve the effect of excellent coating characteristics

Active Publication Date: 2011-11-16
CHEIL IND INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These disadvantages would make it difficult for the silane compound to be used to synthesize a polymer with satisfactory physical properties

Method used

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  • Hardmask composition with improved storage stability for forming resist underlayer film
  • Hardmask composition with improved storage stability for forming resist underlayer film
  • Hardmask composition with improved storage stability for forming resist underlayer film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0092] 1,750 g of methyltrimethoxysilane, 340 g of phenyltrimethoxysilane, and 313 g of trimethoxysilane were dissolved in a 10-liter four-wheel tank equipped with a mechanical stirrer, a condenser, a dropping funnel, and a nitrogen inlet tube. 5,600 g of propylene glycol monomethyl ether acetate (PGMEA) in a flask. 925 g of aqueous nitric acid (1,000 ppm) was added to the solution. After allowing the mixture to react at 60° C. for 1 hour, methanol was removed from the reaction mixture under reduced pressure. The reaction was continued for 1 week maintaining the reaction temperature at 50°C. After the reaction was completed, hexane was added to the reaction mixture to precipitate a polymer.

[0093] 2.0 g of this polymer was diluted with 100 g of MIBK, and 0.002 g of pyridinium p-toluenesulfonate and 0.02 g of acetic anhydride were added thereto. The resulting solution was spin-coated onto a silicon wafer coated with silicon nitride and a carbon-based hardmask, followed by ...

Embodiment 2

[0095] 49.3g of methyltrimethoxysilane, 43.9g of phenyltrimethoxysilane, and 306.8g of 1,2-bis(triethoxysilyl)ethane were dissolved in a condensing 1,600 g of propylene glycol monomethyl ether acetate (PGMEA) in a 3-liter four-necked flask with a dropper, dropping funnel, and nitrogen inlet line. 131.3 g of an aqueous nitric acid solution (1,000 ppm) was added to the solution. After allowing the mixture to react at room temperature for 1 hour, alcohol was removed from the reaction mixture under reduced pressure. The reaction was continued for 1 week maintaining the reaction temperature at 50°C. After the reaction was completed, hexane was added to the reaction mixture to precipitate a polymer.

[0096] 2.0 g of this polymer was diluted with 100 g of MIBK, and 0.002 g of pyridinium p-toluenesulfonate and 10 g of propylene glycol propyl ether were added thereto. The resulting solution was spin-coated onto a silicon wafer coated with silicon nitride and a carbon-based hardmask...

Embodiment 3

[0098] With 220.1g of methyltrimethoxysilane, 68.0g of phenyltrimethoxysilane, and 612.0g of tetraethyl orthosilicate, dissolve in a tank equipped with a mechanical stirrer, condenser, dropping funnel and nitrogen inlet tube 2,100 g of propylene glycol monomethyl ether acetate (PGMEA) in a 5 L four-necked flask. 222.3 g of aqueous nitric acid solution (1,000 ppm) were added to the solution. After allowing the mixture to react at room temperature for 5 hours, alcohol was removed from the reaction mixture under reduced pressure. The reaction was continued for 1 week maintaining the reaction temperature at 50°C. After the reaction was completed, hexane was added to the reaction mixture to precipitate a polymer.

[0099] 2.0 g of this polymer was diluted with 100 g of MIBK, and 0.002 g of pyridinium p-toluenesulfonate and 0.02 g of phenyltrimethoxysilane were added thereto. The resulting solution was spin-coated onto a silicon wafer coated with silicon nitride and a carbon-base...

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Abstract

Disclosed is a hardmask composition for forming a resist underlayer film. The hardmask composition comprises (A) an organosilane polymer and (B) at least one stabilizer. The hardmask composition is very stable during storage and allows a good pattern to be transferred to a material layer due to its excellent hardmask properties.

Description

technical field [0001] The present invention relates to a hardmask composition that can be applied by spin coating (hereinafter also referred to as 'spin-on hardmask composition'), a method for using the hardmask composition to produce A method for a semiconductor integrated circuit device, and a semiconductor integrated circuit produced using the method. Background technique [0002] As the width of lines used in semiconductor microcircuits decreases, there is a greater need for photoresists with smaller thicknesses due to the aspect ratio of the pattern. However, a photoresist that is too thin will hardly function as a mask in the subsequent pattern transfer process (ie, etching). This means that because the thinner photoresist tends to wear out during etching, the underlying substrate cannot be etched to the desired depth. [0003] In order to solve these problems, a hard mask process has been introduced at present. A hard mask is a material characterized by high etch ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/075
CPCH01L21/02282H01L21/0332H01L21/02216C09D183/04C08G77/18C08L83/04G03F7/0752H01L21/02126G03F7/075
Inventor 高尚兰金相均林相学金美英尹熙灿金到贤鱼东善金锺涉
Owner CHEIL IND INC
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