Rectangular micro heating device with heating resistance wire with non-uniform wire width and heating method

A technology for heating resistance wires and heaters, applied in ohmic resistance heating parts, microstructure technology, microstructure devices, etc., can solve the problems of increasing heater power consumption, affecting mechanical strength, and complex process, etc., to reduce heat conduction , The manufacturing process is simple, the effect of uniform temperature distribution

Inactive Publication Date: 2011-11-23
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These two methods can improve the temperature uniformity to a certain extent, but the process is complicated, th

Method used

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  • Rectangular micro heating device with heating resistance wire with non-uniform wire width and heating method
  • Rectangular micro heating device with heating resistance wire with non-uniform wire width and heating method
  • Rectangular micro heating device with heating resistance wire with non-uniform wire width and heating method

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Experimental program
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Embodiment 1

[0035] The structure schematic diagram of this embodiment sees figure 1 As shown in (a), the specific production method is as follows:

[0036] 1. Select the substrate. A 4-inch double-sided polished silicon wafer with an N-type (100) surface is selected as a substrate, the resistivity is 3-8Ω·cm, the thickness of the silicon wafer is 350±10 microns, and the angle error of trimming is <1%.

[0037]2. Make a composite film. A single-layer composite film is used to sequentially grow a layer of silicon oxide with a thickness of 0.5 microns and a layer of silicon nitride with a thickness of 0.3 microns by means of low-pressure chemical vapor deposition (LPCVD).

[0038] 3. Make zigzagging heating resistance wires, leads and electrodes. Manufactured using a lift-off process. Thin-resist lithography (photoresist thickness is 2.0 microns) defines the pattern of zigzag heating resistance wires, leads and electrodes, then sputters a layer of 0.2-micron thick titanium platinum, and ...

Embodiment 3

[0049] The structure schematic diagram of this embodiment sees Figure 4 As shown, the specific production method is as follows:

[0050] 1. Substrate selection. A 4-inch double-sided polished silicon wafer with a P-type (100) surface is selected as the substrate, the resistivity is 3-8Ω·cm, the thickness of the silicon wafer is 350±10 microns, and the angle error of the edge trimming is less than 1%.

[0051] 2. Make a composite film. Using a multi-layer composite film, a layer of silicon oxide with a thickness of 0.2 microns and a layer of silicon nitride with a thickness of 0.2 microns are sequentially deposited by low-pressure chemical vapor deposition (LPCVD), and then plasma-enhanced chemical vapor deposition (PECVD) A method of depositing a layer of silicon oxide with a thickness of 0.2 microns and a layer of silicon nitride with a thickness of 0.2 microns in sequence.

[0052] 3. Make zigzagging heating resistance wires, leads and electrodes. Manufactured by lift-o...

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Abstract

The invention relates to a rectangular micro heating device with a heating resistance wire with non-uniform wire width and a heating method. The micro heating device comprises a substrate frame, a rectangular heating film region, a supporting suspension beam, a trapezoidal transition region, a folded heating resistance wire, a lead, a contact electrode and a heat insulation chamber. The system is characterized in that the rectangular heating film region is connected with the substrate frame through the transition region and the supporting suspension beam; the folded heating resistance wire is arranged on the rectangular heating film region in a manner of having wider wire width at the centre of the heating film region and narrower wire width at two ends of the heating film region, and is connected with the contact electrode on the substrate frame through the lead on the supporting suspension beam; and the heat insulation chamber is arranged below the rectangular heating film region and the supporting suspension beam.

Description

technical field [0001] The invention relates to a rectangular micro-heater with non-uniform line width heating resistance wire and a manufacturing method thereof, belonging to the field of micro-electro-mechanical systems (MEMS). Background technique [0002] With the continuous development of micro-processing technology, micro-heaters based on MEMS technology have begun to be widely used in the fields of gas detection, environmental monitoring and infrared light sources. Due to the continuous promotion and deepening of applications, the requirements for low power consumption, low cost, high performance and high reliability of micro heaters are also increasingly strong. How to make a heater with low power consumption and high performance has always been the goal pursued by those skilled in the art. [0003] When applied in the field of gas sensing, in order to achieve better performance, the heating film area of ​​the heater needs to have better temperature uniformity. For...

Claims

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Application Information

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IPC IPC(8): H05B3/02B81C1/00
Inventor 许磊李铁王跃林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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