A Microwave Synthesis Method of ZnO Thin Films with Oriented Nanorod Structure

A zinc oxide film, microwave synthesis technology, applied in the direction of zinc oxide/zinc hydroxide, etc., can solve the problems of poor optoelectronic properties of ZnO nanorod film, unfavorable large-scale industrial production, increase operation complexity, etc., and achieve low cost, crystallization The effect of high degree and simple equipment

Inactive Publication Date: 2011-11-30
DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, the above-mentioned methods have many disadvantages: they all need seed crystal induction, increase the complexity of operation, increase the cost, and are not conducive to large-scale industrial production; the growth time is long, which is not conducive to large-scale industrial production; the grown ZnO nanorods T

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  • A Microwave Synthesis Method of ZnO Thin Films with Oriented Nanorod Structure
  • A Microwave Synthesis Method of ZnO Thin Films with Oriented Nanorod Structure
  • A Microwave Synthesis Method of ZnO Thin Films with Oriented Nanorod Structure

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Embodiment 1

[0029] Embodiment 1: Add analytically pure zinc nitrate hexahydrate into distilled water, and keep stirring to configure Zn 2+Concentration is the transparent solution of 100mM, and the gained solution is denoted as A; Add analytically pure hexamethylenetetramine into distilled water, and keep stirring, is configured into the transparent solution that hexamethylenetetramine concentration is 100mM, and the gained solution is denoted as B: Mix the above prepared A solution and B solution evenly, pour it into the XP1500 microwave digestion container, control the filling degree at 75%, and put the conductive glass substrate inside the XP1500 microwave digestion container, the substrate and the XP1500 microwave digestion container The bottom surface of the digestion vessel is at an angle of 90°, then seal the XP1500 microwave digestion vessel, and put it into the MARS high-throughput closed microwave digestion instrument; select the temperature control mode for reaction, the water h...

Embodiment 2

[0031] Embodiment 2: Add analytically pure zinc sulfate heptahydrate into distilled water, and keep stirring, configure Zn 2+ Concentration is the transparent solution of 50mM, and the gained solution is marked as A; Add the analytically pure hexamethylenetetramine into distilled water, and keep stirring, it is configured into the transparent solution that the hexamethylenetetramine concentration is 50mM, and the gained solution is marked as B: Mix the above prepared A solution and B solution evenly, pour it into the XP1500 microwave digestion container, control the filling degree at 60%, and put the conductive glass substrate inside the XP1500 microwave digestion container, the substrate and the XP1500 microwave digestion container The bottom surface of the digestion vessel is at an angle of 70°, then seal the XP1500 microwave digestion vessel, and put it into the MARS high-throughput closed microwave digestion instrument; select the temperature control mode for the reaction, ...

Embodiment 3

[0032] Embodiment 3: Add analytically pure zinc acetate dihydrate into distilled water, and constantly stir, configure Zn 2+ Concentration is the transparent solution of 150mM, and the gained solution is denoted as A; Add analytically pure hexamethylenetetramine into distilled water, and keep stirring, is configured into the transparent solution that hexamethylenetetramine concentration is 150mM, and the gained solution is denoted as B: Mix the above prepared A solution and B solution evenly, pour it into the XP1500 microwave digestion container, control the filling degree at 90%, and put the plastic substrate inside the XP1500 microwave digestion container, the substrate and the XP1500 microwave digestion container The bottom surface of the container is at an angle of 20°, then seal the XP1500 microwave digestion container, and put it into the MARS high-throughput closed microwave digestion instrument; select the temperature control mode to react, the water heating temperature...

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Abstract

The invention relates to the synthesis of low-dimensional nanomaterial films, and provides a microwave synthesis method of a zinc oxide film with an oriented nanorod structure. The method is characterized in that a microwave-hydrothermal deposition method is adopted, a zinc salt solution with a molar concentration of 1-150 mM and a hexamethylene tetramine solution are used as raw materials, a blank substrate is placed inside a microwave digestion container, then the container is sealed and placed in a microwave digestion instrument, and after the reaction is carried out at 50-180 DEG C for 0-4 hours, natural cooling is carried out so as to realize the oriented growth of a high-crystallinity film composed of ZnO nanorod arrays on the substrate, wherein the diameter of the nanorods is about50-300 nm. The microwave-hydrothermal method provided by the invention combines the advantages of microwave and hydrothermal methods, improves the film crystallinity, and significantly improves the film quality. The synthesis method has the advantages of short synthesis time, low synthesis temperature and no need for induced hydrothermal deposition of seed crystals; and the grown ZnO film with the nanorod structure has the advantages of uniform micro morphology, good crystallinity and growth direction perpendicular to the substrate, and is suitable for industrial production.

Description

technical field [0001] The invention relates to a preparation method of a low-dimensional nano material film, in particular to a microwave hydrothermal deposition method for synthesizing an aligned zinc oxide nanorod film and its preparation technology. Background technique [0002] Zinc oxide is an important wide-bandgap semiconductor functional material. The bandgap is 3.3eV at room temperature, and the exciton binding energy is as high as 60meV. It has strong free exciton transition luminescence in the ultraviolet band. It is cheap, non-toxic and harmless to the environment, suitable for epitaxial growth of thin films, and has broad application prospects in the field of information optoelectronics. It is another research hotspot in the world after GaN and GaAs in recent years. Since the highly ordered growth of ZnO nanostructures on the substrate can make short-wave lasers and dye-sensitized nano-oxide solar electrodes, it has become a research hotspot for scientists from...

Claims

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Application Information

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IPC IPC(8): C03C17/23C04B41/85C01G9/02
Inventor 李灿于睿任通张文华
Owner DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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