A Microwave Synthesis Method of ZnO Thin Films with Oriented Nanorod Structure

Abstract

The invention relates to the synthesis of low-dimensional nanomaterial films, and provides a microwave synthesis method of a zinc oxide film with an oriented nanorod structure. The method is characterized in that a microwave-hydrothermal deposition method is adopted, a zinc salt solution with a molar concentration of 1-150 mM and a hexamethylene tetramine solution are used as raw materials, a blank substrate is placed inside a microwave digestion container, then the container is sealed and placed in a microwave digestion instrument, and after the reaction is carried out at 50-180 DEG C for 0-4 hours, natural cooling is carried out so as to realize the oriented growth of a high-crystallinity film composed of ZnO nanorod arrays on the substrate, wherein the diameter of the nanorods is about50-300 nm. The microwave-hydrothermal method provided by the invention combines the advantages of microwave and hydrothermal methods, improves the film crystallinity, and significantly improves the film quality. The synthesis method has the advantages of short synthesis time, low synthesis temperature and no need for induced hydrothermal deposition of seed crystals; and the grown ZnO film with the nanorod structure has the advantages of uniform micro morphology, good crystallinity and growth direction perpendicular to the substrate, and is suitable for industrial production.

Description

technical field [0001] The invention relates to a preparation method of a low-dimensional nano material film, in particular to a microwave hydrothermal deposition method for synthesizing an aligned zinc oxide nanorod film and its preparation technology. Background technique [0002] Zinc oxide is an important wide-bandgap semiconductor functional material. The bandgap is 3.3eV at room temperature, and the exciton binding energy is as high as 60meV. It has strong free exciton transition luminescence in the ultraviolet band. It is cheap, non-toxic and harmless to the environment, suitable for epitaxial growth of thin films, and has broad application prospects in the field of information optoelectronics. It is another research hotspot in the world after GaN and GaAs in recent years. Since the highly ordered growth of ZnO nanostructures on the substrate can make short-wave lasers and dye-sensitized nano-oxide solar electrodes, it has become a research hotspot for scientists from...

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Problems solved by technology

However, the above-mentioned methods have many disadvantages: they all need seed crystal induction, increase the complexity of operation, increase the cost, and are not conducive to large-scale industrial production; the growth time is long, which is not conducive to large-scale industrial production; the grown ZnO nanorods The photoelectric properties of thin films are poor, and annealing treatment is required to meet the requirements for preparing ultraviolet lasers and solar cell electrodes

At present, there are few reports for the synthesis of nanostructured semiconductor films, especially for the synthesis of films with ZnO nanorod structures.

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