A kind of etching solution for preparing monocrystalline silicon solar cell textured surface
A solar cell and corrosion solution technology, applied in crystal growth, post-processing details, and post-processing, etc., can solve problems such as unsuitable for industrial production, difficult control of the texturing process, and increased preparation steps, so as to achieve good stability and ensure the quality of the texture Surface size and uniformity, effect of high boiling point
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Embodiment 1
[0023] An etching solution for preparing the textured surface of monocrystalline silicon solar cells, by weight, comprising:
[0024] (a) Sodium hydroxide: 2%;
[0025] (b) Sodium silicate: 4%;
[0026] (c) 1,3,5-cyclohexanetriol: 6%;
[0027] The balance is water.
[0028] First, add solute mass fraction of 2wt% NaOH and 4wt% NaSiO in the texturing tank 3 and 1,3,5-cyclohexanetriol with a solution volume fraction of 6vol%, heated and maintained at 98°C; then a 156mm×156mm single crystal p-type silicon wafer was placed in a 20wt% NaOH solution Medium polishing to remove the damaged layer for 1min, cleaning with deionized water; finally putting it into the above-mentioned etching solution, the etching time is 9min, the quality difference of silicon wafer etching before and after texturing is 0.6g, continuous texturing 18 batches, all can get Texture with similar size and uniformity (for each piece of silicon wafer texturing, 1g of solid NaOH needs to be supplemented), and t...
Embodiment 2
[0030] An etching solution for preparing the textured surface of monocrystalline silicon solar cells, by weight, comprising:
[0031] (a) Sodium hydroxide: 1.5%;
[0032] (b) Sodium silicate: 4.5%;
[0033] (c) 1,3,5-cyclohexanetriol: 5%;
[0034] (d) Alkyl synthetic alcohol alkoxylates: 0.1%;
[0035] The balance is water.
[0036] First, add 1.5wt% NaOH and 4.5wt% NaSiO in the texturing tank 3 and 1,3,5-cyclohexanetriol, alkyl synthetic alcohol alkoxylate (1,3,5-cyclohexanetriol and alkyl synthetic alcohol alkoxylate) with a volume fraction of 5vol% The volume ratio is 50:1), the temperature is heated and kept at 90°C; then a 156mm×156mm single crystal p-type silicon wafer is polished in a NaOH solution with a mass fraction of 20wt% to remove the damaged layer for 1min, and cleaned with deionized water; Finally put it into the texturing solution, the corrosion time is 12min, the mass difference of silicon wafers etched before and after texturing is 0.8g, continuous text...
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