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Charge pump and low-pass filter component with anti-single particle radiation circuit

An anti-single particle radiation, low-pass filter technology, applied in the direction of electrical components, automatic power control, etc., can solve the problems of increasing the output clock jitter of the phase-locked loop, prolonging the loop recovery time, and difficult to achieve circuit bandwidth, etc. Achieve the effect of shortened stabilization time, good compatibility and easy integration

Inactive Publication Date: 2011-12-21
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the addition of the compensation circuit alleviates the influence of single event radiation on the output voltage of the charge pump, it prolongs the recovery time of the loop, increases the clock jitter of the phase-locked loop output, and reduces the clock accuracy; at the same time, due to the structure of the compensation circuit Complex, difficult to integrate, high power consumption (the amplifier has static power consumption), and occupies a large chip area (at least 30 transistors); when the integrated chip (circuit manufacturing process) reaches the sub-micron level (0.25 μm ~ 0.8 μm) , when the change speed of the radiation current exceeds 5 GHz, this technology has defects such as high requirements for the integration process, difficult circuit bandwidth to meet the change requirements of the radiation current, and extremely poor dynamic compensation effect.

Method used

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  • Charge pump and low-pass filter component with anti-single particle radiation circuit
  • Charge pump and low-pass filter component with anti-single particle radiation circuit
  • Charge pump and low-pass filter component with anti-single particle radiation circuit

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Embodiment approach

[0013] Present embodiment: in the charge pump phase-locked loop (CPPLL) circuit, the frequency and phase detector, the charge pump and the voltage-controlled oscillator are all the same as the background technology; C1=50pF, C2=600pF, R2=1KΩ; the inverters INV1, INV2, and INV3 are all implemented by a PMOS and an NMOS gate-drain co-connection integration, and the transmission gate modules TG1, TG2, and TG3 all use a PMOS and an NMOS source Leakage co-connection integration is realized; the above-mentioned inverter and transmission gate modules are all integrated and realized by smic013μm standard commercial process line.

[0014] In the controller of this embodiment: the input terminal (a) of the inverter INV1 is connected with the reverse control terminal (g) of the transmission gate module TG1 and the forward control terminal (1) of the transmission gate module TG2 to receive the frequency discrimination The phase leading signal generated by the phase detector, the output te...

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PUM

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Abstract

The invention belongs to the field of microelectronic chip designing and manufacturing, and discloses a charge pump and low-pass filter component with an anti-single particle radiation circuit. The component comprises a charge pump, a low-pass filter and a numerical control suppression circuit, wherein the numerical control suppression circuit is arranged between the charge pump and the low-pass filter, comprises a controller and a selector, and can suppress current interference pulses generated by single particle radiation in real time. The whole charge pump phase-locked loop (CPPLL) circuitworks normally when the single particle radiation does not exist, and is controlled to be intercepted when the single particle radiation exists, to prevent the influence of the radiation current interference pulses on a post circuit when the single particle radiation exists. Therefore, the component is easy to integrate and has the characteristics of effectively improving the overall output jitter performance and single particle radiation resistance of the phase-locked loop circuit, reducing a control voltage peak value by about 80 percent, shortening stabilization time by about 50 percent, along with simple circuit structure, low power consumption, small area, high working speed, high compatibility and the like.

Description

technical field [0001] The invention belongs to the technical field of design and manufacture of microelectronic chips, in particular to a single-event radiation-resistant charge pump and a low-pass filter assembly for a charge pump phase-locked loop chip. technical background [0002] In microelectronic chip design, phase-locked loop technology is an important part of the clock circuit. Among them, a charge pump is inserted between the frequency detector and the low-pass filter of the phase-locked loop circuit to form a charge pump phase-locked loop (Charge Pump Phase-Locked Loop referred to as CPPLL), which can eliminate the phase difference, so CPPLL has been widely used. application. With the rapid development of space technology, microelectronic chips and CPPLL technology in clock circuit design have also been successfully applied in aerospace and aerospace fields. However, various radiations in space, such as solar wind, solar flares and other factors, have varying d...

Claims

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Application Information

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IPC IPC(8): H03L7/093
Inventor 徐小良刘辉华敖思远武鹏
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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