A kind of solar cell structure and preparation method thereof
A solar cell and battery technology, applied in the field of solar energy, can solve the problems of poor anti-reflection effect, unfavorable cell efficiency, and improvement, and achieve the effects of increasing light intake, reducing short-wave absorption, and optimizing optical performance.
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Embodiment 1
[0040] Such as figure 2 As shown, the solar cell structure of the present embodiment includes a Si battery substrate 1, and a SiNx anti-reflection passivation layer 2 is arranged on the light-facing surface of the battery substrate 1, and also includes a fired SiNx anti-reflection passivation layer 2, which is connected with the battery. Front contact electrode 3 for ohmic contact with substrate 1;
[0041] Wherein, the Si battery substrate 1 includes a P-type region 10 and an N-type region 11, and a P+ back surface field 13 and a back contact electrode 14 are formed on the back side of the Si battery substrate;
[0042] The SiNx anti-reflection passivation layer 2 includes a 4-layer film structure, along the battery substrate 1 from bottom to top are the first layer of film structure 2-1, the second layer of film structure 2-2, and the third layer of film structure 2-3 and the fourth membrane structure 2-4;
[0043] Among them, the thickness of the first film structure 2-1...
Embodiment 2
[0046] Such as image 3 As shown, the solar cell structure of the present embodiment includes a Si battery substrate 1, and a SiNx anti-reflection passivation layer 2 is arranged on the light-facing surface of the battery substrate 1, and also includes a fired SiNx anti-reflection passivation layer 2, which is connected with the battery. Front contact electrode 3 for ohmic contact with substrate 1;
[0047] Wherein, the Si battery substrate 1 includes a P-type region 10 and an N-type region 11, and a P+ back surface field 13 and a back contact electrode 14 are formed on the back side of the Si battery substrate;
[0048] The SiNx anti-reflection passivation layer 2 includes a three-layer film structure, which is the first layer film structure 2-1, the second layer film structure 2-2, and the third layer film structure 2-3 from bottom to top along the battery substrate 1. ;
[0049] Among them, the thickness of the first film structure 2-1 is about 77nm, and the refractive in...
Embodiment 3
[0072] This embodiment is a preparation method for the solar cell structure provided in Embodiment 1, as shown in Figure 5, wherein Figure 5(a) is a process flow diagram of this embodiment, and Figure 5(b) is the same as Figure 5 (a) The corresponding implementation effect diagram of the technological process, including the following steps:
[0073] S21, removing the damaged layer on the surface of the P-type silicon substrate, forming an anti-reflection surface structure and chemical cleaning.
[0074] See S21' for the implementation effect of this step.
[0075] S22, in POCl 3 The diffusion of the n-type layer is carried out in the atmosphere.
[0076] That is, an n-type layer is formed on the surface of the p-type silicon substrate, thereby producing a PN junction. The implementation effect of this step is shown in S22'.
[0077] S23, removing the peripheral PN junction.
[0078] In this step, plasma is used to etch the edge of the silicon wafer to prevent conduction on...
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