Nanometer level polishing solution and preparation method thereof

A polishing liquid and nano-level technology, applied in polishing compositions containing abrasives, etc., can solve the problems of difficult dispersion performance processing, insufficient performance, loss of nano-diamonds, etc., and achieve small overall size deformation and complete wafer structure. , easy to store effects

Active Publication Date: 2013-07-03
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

Nano-diamond micropowder is prone to agglomeration, and the micropowder with poor dispersion performance is very difficult to process in the actual use process, and often loses many advantages of nano-diamond, so that its effectiveness cannot be fully exerted.

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  • Nanometer level polishing solution and preparation method thereof

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Embodiment Construction

[0038] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the following further describes the present invention in detail in conjunction with specific embodiments and with reference to the accompanying drawings.

[0039] When the thinning process enters the polishing stage, a synthetic disk with a soft texture and good elasticity coefficient should be used, such as a tin disk, an antimony disk, a resin disk, etc., and a polishing liquid that matches with it should be used.

[0040] The nano-grade polishing liquid provided by the present invention adopts the following components: (1) Diamond powder: particle size of 30nm~500nm; (2) Alumina powder: particle size of 30nm~1μm; (3) Silica gel (silica hydrate) : Particle size 30nm~1μm; (4) Surfactant: sodium dodecylbenzene sulfonate / sodium lauryl sulfate / maleic anhydride mixture; (5) Dispersant: sodium silicate / sodium hypochlorite / Sodium pyrophosphate mixture; (6) Lubricant: polyethyle...

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Abstract

The invention discloses a nanometer level polishing solution and a preparation method thereof. The polishing solution is prepared from the following components in percentage by mass: 0.1 to 10 percent of monocrystal artificial diamond micro powder, 0.1 to 5 percent of aluminum oxide micro powder, 0.1 to 10 percent of silica gel, 0.3 to 10 percent of surfactant, 0.05 to 4 percent of dispersing agent, 0.5 to 1 percent of lubricant, 0.01 to 1 percent of chemical PH value regulator and 60 to 98.2 percent of solvent. The invention also discloses the preparation method for the nanometer level polishing solution. By the method, mixed serous fluid is prepared from the nanometer level diamond, the aluminum oxide and the silica gel, so an ideal polishing effect is achieved, the requirement of a process for thinning and grinding substrates (silicon carbide and sapphire) for GaN extension is met, and a technical means is provided for a polishing process for semiconductors.

Description

Technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to a nano-level polishing liquid and a preparation method thereof. Background technique [0002] As the third-generation wide-bandgap semiconductor material, gallium nitride (GaN) has a large forbidden band width (3.4eV), high breakdown voltage (3.3MV / cm), and high two-dimensional electron gas concentration (> 10 13 cm 2 ), the saturated electron velocity is large (2.8×10 7 cm / s) and other characteristics have received widespread attention internationally. The application of GaN in devices is regarded as the most important semiconductor event in the 1990s. At present, the high-frequency, high-voltage, high-temperature, and high-power characteristics of AlGaN / GaNHEMT devices make it a huge prospect in microwave power devices. At the same time, GaN brings semiconductor light-emitting diodes and lasers to a new level. [0003] GaN is a direct band gap semiconductor materi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02
Inventor 汪宁陈晓娟罗卫军庞磊刘新宇
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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