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Method for manufacturing solar battery with selective emitter

A technology of solar cells and emitters, applied in circuits, electrical components, climate sustainability, etc., can solve the problems of battery open circuit voltage and short circuit current reduction, low photon absorption efficiency, fill factor reduction, etc., to achieve short circuit current improvement, Improve photon response and reduce internal resistance

Inactive Publication Date: 2012-01-25
浙江天明国际科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Excessively high diffusion concentration will facilitate the formation of good electrode contact characteristics between the screen-printed electrode and the emission area on the front of the battery, but it will bring lower photon absorption efficiency and higher defect density, which will lead to battery open circuit voltage and Short circuit current reduction
However, if the diffusion concentration is too low, although it will improve the light quantum response of the battery and increase the density of the short-circuit battery, it will cause half of the contact resistance to increase and cause a decrease in the fill factor.

Method used

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  • Method for manufacturing solar battery with selective emitter

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Embodiment 1: A kind of preparation method of selective emitter solar cell is carried out according to the following steps:

[0023] (1) When printing electrodes, mix high-concentration phosphorus slurry into the electrode slurry:

[0024] First, evenly coat the surface of the silicon wafer with 5% phosphoric acid aqueous solution. The thickness of the phosphoric acid aqueous solution is 40 μm. The phosphoric acid aqueous solution is diffused on the surface of the silicon wafer. Doped with phosphorus slurry containing 30% phosphorus, after sintering the electrode, a highly doped area square is obtained in the electrode contact area, and the resistance of the highly doped area square is 15Ω, forming an ohmic contact;

[0025] (2) Diffusion in the atmosphere of phosphorus oxychloride after printing high-concentration phosphorous slurry in the electrode grid linear screen:

[0026] ①. At the beginning of the diffusion, the POCl is introduced 3 gas:

...

Embodiment 2

[0033] A preparation method for a selective emitter solar cell, which comprises the following steps:

[0034] (1) When printing electrodes, mix high-concentration phosphorus slurry into the electrode slurry:

[0035]First, evenly coat the surface of the silicon wafer with 5% phosphoric acid aqueous solution. The thickness of the phosphoric acid aqueous solution is 45 μm. The phosphoric acid aqueous solution is diffused on the surface of the silicon wafer. Doped with phosphorus slurry containing 30% phosphorus, after sintering the electrode, a highly doped area square is obtained in the electrode contact area, and the resistance of the highly doped area square is 20Ω, forming an ohmic contact;

[0036] (2) Diffusion in the atmosphere of phosphorus oxychloride after printing high-concentration phosphorous slurry in the electrode grid linear screen:

[0037] ①. At the beginning of the diffusion, the POCl is introduced 3 gas:

[0038] Phosphorous slurry is ...

Embodiment 3

[0044] A preparation method for a selective emitter solar cell, which comprises the following steps:

[0045] (1) When printing electrodes, mix high-concentration phosphorus slurry into the electrode slurry:

[0046] First, evenly coat the surface of the silicon wafer with 5% phosphoric acid aqueous solution. The thickness of the phosphoric acid aqueous solution is 50 μm. The phosphoric acid aqueous solution is diffused on the surface of the silicon wafer. Doped with phosphorus slurry containing 30% phosphorus, after sintering the electrode, a highly doped area square is obtained in the electrode contact area, and the resistance of the highly doped area square is 25Ω, forming an ohmic contact;

[0047] (2) Diffusion in the atmosphere of phosphorus oxychloride after printing high-concentration phosphorous slurry in the electrode grid linear screen:

[0048] ①. At the beginning of the diffusion, the POCl is introduced 3 gas:

[0049] Phosphorus slur...

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Abstract

The invention relates to a method for manufacturing a solar battery with a selective emitter, and in particular relates to a method for manufacturing a solar battery with a selective emitter through carrying out light doping on the positions below a positive electrode grid line and the vicinity of the positive electrode grid line as well as heavy doping on the positions between electrodes. When the electrodes are printed, high-concentration phosphorus slurry is doped in electrode slurry, and the combination of diffusion, rapid diffusion and regular diffusion is carried out in a phosphorus oxychloride atmosphere after the high-concentration phosphorus slurry is subjected to electrode grid linear silk-screen printing. The conversion efficiency of a crystal silicon solar battery is improved due to the improvement of a selective emitter technology for open-circuit voltage, short-circuit current and filling factors; the internal resistance of the battery is reduced, the inner losses and the heating are decreased in the process of power generation, and the service life of a battery plate is prolonged at a certain extent; the reverse current is reduced; the performances at a low light level are good; and the light quantum response of the battery is improved due to the low diffusion density, the battery consistency is good, and the technology is stable.

Description

technical field [0001] The patent of the present invention relates to a method for preparing a solar cell, in particular to a method for preparing a selective emitter solar cell that is heavily doped under and near the grid line of the positive electrode and lightly doped between the electrodes. Background technique [0002] At present, the traditional link that restricts the improvement of the photoelectric conversion rate of solar cells is mainly the relationship between the two processes of diffusion and metal electrode production. Excessively high diffusion concentration will facilitate the formation of good electrode contact characteristics between the screen-printed electrode and the emission area on the front of the battery, but it will bring lower photon absorption efficiency and higher defect density, which will lead to battery open circuit voltage and reduction in short-circuit current. However, if the diffusion concentration is too low, although it will improve...

Claims

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Application Information

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IPC IPC(8): H01L31/18B41M1/12
CPCY02P70/50
Inventor 刘亮陈磊徐永洋
Owner 浙江天明国际科技有限公司
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