Hexagonal boron nitride substrate provided with single atomic layer step and preparation method and application thereof

A technology of hexagonal boron nitride and single atomic layer, which is applied in chemical instruments and methods, coatings, gaseous chemical plating, etc., can solve the problem of lack of hBN substrate pretreatment and achieve the effect of avoiding pollution

Active Publication Date: 2012-02-01
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, there is currently a lack of pretreatment of the hBN substrate itself

Method used

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  • Hexagonal boron nitride substrate provided with single atomic layer step and preparation method and application thereof
  • Hexagonal boron nitride substrate provided with single atomic layer step and preparation method and application thereof
  • Hexagonal boron nitride substrate provided with single atomic layer step and preparation method and application thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] The first step: using single crystal hBN flakes as raw materials, on SiO 2 / Si substrates were mechanically exfoliated to obtain hBN sheets with fresh cleavage planes, such as figure 1 As shown, its surface is very flat without any steps.

[0028] The second step: the hBN / SiO obtained in the first step 2 The substrate is put into a tube furnace, and the hydrogen-argon gas mixture (H 2 : Ar=1:3, volume ratio), be warming up to 1200 ℃ with the heating rate of 20 ℃ / min, constant temperature 10min, then cool with furnace, obtain like this figure 2 The height analysis shows that the height of the single atomic layer steps is 0.34nm and 0.33nm, which is a single BN atomic layer step, and the distance between the steps is about 500nm.

Embodiment 2

[0030] The first step: take the single crystal hBN block as the substrate, and remove the surface layer of hBN by mechanical stripping.

[0031] The second step: the substrate is put into the tube furnace, and the mixed gas of hydrogen and argon (H 2 : Ar=1:6, volume ratio), with a heating rate of 20°C / min, it is heated up to 1100°C, kept at a constant temperature for 50min, and then cooled with the furnace, so that the steps of the monoatomic layer height are obtained, such as image 3 shown. The spacing between the steps is 1-5 microns.

Embodiment 3

[0033] The first step: the hBN grown by CVD method is used as the substrate, and the hBN surface layer is removed by mechanical stripping. The process of preparing hBN by CVD method is as follows: use borazine as the BN source, argon as the carrier gas, and grow the hBN film at 1000 °C on the metal Ni as the substrate under the pressure of 5 Pa for half an hour, and transfer the hBN film to SiO 2 / Si substrate.

[0034] The second step: the substrate is put into the tube furnace, and the mixed gas of hydrogen and argon (H 2 : Ar=1:9, volume ratio), with a heating rate of 20°C / min, it is heated up to 1000°C, kept at a constant temperature for 300min, and finally cooled with the furnace, so that the steps of the monoatomic layer height are obtained, such as Figure 4 shown. The analysis result of the step height is 0.35nm, which is a single BN atomic step, and the interval between the steps is 2-5 microns.

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Abstract

The invention provides a hexagonal boron nitride (hBN) substrate provided with a single atomic layer step and a preparation method thereof, the surface of the hBN substrate undergoes cleavage and a fresh cleavage surface is obtained, then the hexagonal boron nitride is etched via a hydrogen under a high temperature, and a controllable and regular single atomic layer step is obtained. An anisotropy etching effect of the hydrogen upon the hBN is used, etching rate and etching degree are controlled via adjustment of hydrogen rate, annealing temperature, and annealing time, and purpose of etchinga regular single atomic layer step can be reached. The preparation technology is compatible with the preparation technology for grapheme via a chemical vapour deposition method, and can be used for preparation of grapheme nanometers. The hexagonal boron nitride substrate is mainly applied in novel grapheme electronic devices.

Description

technical field [0001] The invention relates to a hexagonal boron nitride (hBN) substrate with monoatomic layer steps and a method for etching monoatomic layer steps on an insulating substrate hexagonal boron nitride, belonging to the field of new materials and nanometer materials. Background technique [0002] The base material of graphene is very important. Graphene currently grown on metal substrates by chemical vapor deposition (CVD) needs to be transferred to insulating substrates. Currently commonly used SiO 2 / Si substrate, graphene localized carrier doping due to surface charge aggregation, and SiO 2 - Scattering of graphene carriers by phonons on the graphene interface, transfer to SiO 2 The upper limit of electron mobility of graphene on / Si substrate is reduced to 40000cm 2 / Vs, which greatly reduces the performance of graphene field effect transistors. In 2008, Chen J.H et al. published the paper Intrinsic and Extrinsic Performance Limits of Graphene Devices ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/53C01B31/04B82Y40/00C30B33/02C23C16/34C23C16/56
Inventor 丁古巧唐述杰谢晓明江绵恒
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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