Water-based 6H-SiC monocrystalline substrate chemical mechanical polishing (CMP) solution and preparation method thereof

A chemical-mechanical, polishing liquid technology, used in polishing compositions containing abrasives, etc.

Inactive Publication Date: 2012-02-01
HENAN INST OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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  • Water-based 6H-SiC monocrystalline substrate chemical mechanical polishing (CMP) solution and preparation method thereof
  • Water-based 6H-SiC monocrystalline substrate chemical mechanical polishing (CMP) solution and preparation method thereof
  • Water-based 6H-SiC monocrystalline substrate chemical mechanical polishing (CMP) solution and preparation method thereof

Examples

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Embodiment 1

[0027] Example 1: Taking the preparation of 500ml chemical mechanical polishing liquid as an example, the dispersion stabilizer nonylphenol polyoxyethylene ether and deionized water are used to prepare a 300ml deionized water mixed solution, wherein the weight percentage of nonylphenol polyoxyethylene ether 0.3%, for later use; take 100ml of silica sol with an average particle size of 25nm and add it to the mixed solution made of nonylphenol polyoxyethylene ether and deionized water, and stir evenly, then add 2g of 150nm diamond powder, and stir Evenly, then add 2g of 1~5nm lubricant and stir evenly. Then add an appropriate amount of deionized water to 490ml; then add 10ml of hydrogen peroxide, stir evenly, and finally add triethanolamine as a pH regulator to adjust its pH to 11.

[0028] Use the above-mentioned prepared polishing solution to polish the Si surface of 2-inch 6H-SiC single wafer (0001) on a ZYP300 polishing machine. Before polishing, the surface roughness is abo...

Embodiment 2

[0029] Embodiment 2: Taking the preparation of 500ml chemical mechanical polishing liquid as an example, use dispersant nonylphenol polyoxyethylene ether and deionized water to prepare a 300ml deionized water mixed solution, wherein the weight percentage of nonylphenol polyoxyethylene ether is 0.4%, for later use; take 100ml of silica sol with an average particle size of 25nm and add it to the mixed solution of nonylphenol polyoxyethylene ether and deionized water, and stir evenly, then add 3g of 250nm diamond powder, and stir evenly , and then add 2g of 1 ~ 5nm lubricant, stir well. Then add an appropriate amount of deionized water to 490ml; then add 10ml of hydrogen peroxide, stir evenly, and finally add triethanolamine as a pH regulator to adjust its pH to 9.5.

[0030] Polish a 2-inch 6H-SiC single wafer (0001) C surface on a ZYP300 polishing machine with the above-mentioned prepared polishing solution. Before polishing, the surface roughness is about 90nm. The polishing ...

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Abstract

The invention discloses a 6H-SiC single chip global planar chemical mechanical polishing (CMP) solution. In the solution, spherical micro-nano particles are taken as grinding materials. The solution comprises the following components in percentage by weight: 0.2-10 percent of 1-3 types of spherical particles of 10-250 nanometers serving as grinding materials, 0.05-15 percent of dispersion stabilizer, 0.05-25 percent of additive having a chemical function, 0.001-5 percent of lubricating, a pH regulator for regulating the pH value to 9.5-13.5 and the balance of high-purity deionized water. The polishing solution has the advantages of controllable removing rate, no damage to a chip after polishing, high flatness, low price and low cost, and can be applied to the CMP process of hard and brittle crystal materials and precision CMP of other optical materials.

Description

technical field [0001] The invention belongs to chemical mechanical polishing technology in semiconductor lighting and optoelectronic processing, and belongs to the technical field of crystal material processing. In particular, it relates to a chemical mechanical polishing liquid for global planarization of a 6H-SiC single wafer and a preparation method thereof. Background technique [0002] Conductor lighting is one of the most promising high-tech fields in the 21st century. The core of a semiconductor lighting device is a light emitting diode (LED, Light Emitting Diode), and the heart of an LED is a semiconductor chip. At present, the core technology of manufacturing LED chips is to make gallium nitride (GaN)-based epitaxial wafers on the substrate. This kind of LED is called GaN-based LED and is widely used in semiconductor lighting. At present, there are many substrate materials for GaN-based LEDs, but there are only two kinds of substrate materials that can be used fo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
Inventor 苏建修高虹郑素真洪源陈锡渠杜家熙付素芳王占合
Owner HENAN INST OF SCI & TECH
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