Surface treatment process of copper foil for high-Tg halogen-free plate
A surface treatment, halogen-free technology, applied in anodizing and other directions, can solve problems such as low Tg CTE, reduced bonding force of substrate resin to copper foil, etc., and achieve good oxidation resistance, high peel strength and corrosion resistance. Effect
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[0054] Example 1
[0055] A surface treatment process for high Tg, halogen-free copper foil for boards, the specific treatment conditions are as follows:
[0056] (1) Pickling: H 2 SO 4 150 g / L, temperature 35 ℃, treatment time 4s.
[0057] (2) Coarse: Cu 2+ 18g / L, H 2 SO 4 120g / L, additive T 55 mg / L, temperature 25℃, current density 25A / dm 2 , The processing time is 6.2s.
[0058] (3) Curing: Cu 2+ 55g / L, H 2 SO 4 80g / L, temperature 43℃, current density 35A / dm 2 , Processing time 8s.
[0059] (4) Blackening: Ni 2+ 0.8g / L, Zn 2+ 0.25g / L, potassium pyrophosphate 40g / L, temperature 45℃, current density 2.5A / dm 2 , Processing time 1.5s.
[0060] (5) Galvanizing: Zn 2+ 5 g / L, K 4 P 2 O 7 80g / L, PH 9.2, temperature 35℃, current density 1.2 A / dm 2 ; Processing time 3s.
[0061] (6) Passivation: Cr 3+ 2.0g / L, Zn 2+ 1.4 g / L, Na 2 SO 4 25 g / L, additive P 0.6 g / L, pH 4.5, temperature 28℃, current density 3.0A / dm 2 , Processing time 4s.
[0062] (7) Silane treatment:...
Example Embodiment
[0064] Example 2
[0065] (1) Pickling: H 2 SO 4 100 g / L, temperature 25℃, treatment time 4s.
[0066] (2) Coarse: Cu 2+ 10g / L, H 2 SO 4 80g / L, additive T 5 mg / L, temperature 20℃, current density 20A / dm 2 , Processing time 2s.
[0067] (3) Curing: Cu 2+ 40g / L, H 2 SO 4 60g / L, temperature 40℃, current density 20A / dm 2 , Processing time 8s.
[0068] (4) Blackening: Ni 2+ 0.1g / L, Zn 2+ 0.05g / L, potassium pyrophosphate 20g / L, temperature 20℃, current density 0.5A / dm 2 , Processing time 0.5s.
[0069] (5) Galvanizing: Zn 2+ 1 g / L, K 4 P 2 O 7 50g / L, PH 8, temperature 25℃, current density 0.5 A / dm 2 ; Processing time 0.5s.
[0070] (6) Passivation: Cr 3+ 1.0g / L, Zn 2+ 0.5 g / L, Na 2 SO 4 20 g / L, additive P 0.2 g / L, pH 4, temperature 25℃, current density 2.0A / dm 2 , Processing time 4s.
[0071] (7) Silane treatment: epoxy silane coupling agent 0.2%, tetraethoxysilane (TEOS) 0.4%, PH 5.0, temperature 25°C, treatment time 2s.
[0072] (8) Drying: temperature is 1...
Example Embodiment
[0073] Example 3
[0074] (1) Pickling: H 2 SO 4 200 g / L, temperature 40℃, treatment time 5s.
[0075] (2) Coarse: Cu 2+ 25g / L, H 2 SO 4 220g / L, additive T 150 mg / L, temperature 35℃, current density 50A / dm 2 , Processing time is 15s.
[0076] (3) Curing: Cu 2+ 75g / L, H 2 SO 4 150g / L, temperature 65℃, current density 50A / dm 2 , Processing time 25s.
[0077] (4) Blackening: Ni 2+ 2.5g / L, Zn 2+ 1.5g / L, potassium pyrophosphate 100g / L, temperature 55℃, current density 10A / dm 2 , Processing time is 5s.
[0078] (5) Galvanizing: Zn 2+ 7 g / L, K 4 P 2 O 7 180g / L, PH 11, temperature 50℃, current density 1.5 A / dm 2 ; Processing time 5s.
[0079] (6) Passivation: Cr 3+ 3.0g / L, Zn 2+ 2 g / L, Na 2 SO 4 30 g / L, additive P 1 g / L, pH 5, temperature 30℃, current density 4.5A / dm 2 , Processing time is 5s.
[0080] (7) Silane treatment: 0.4% epoxy silane coupling agent, 0.6% tetraethoxysilane (TEOS), pH 6.0, temperature 30°C, treatment time 3s.
[0081] (8) Drying: tempera...
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