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Surface treatment process of copper foil for high-Tg halogen-free plate

A surface treatment, halogen-free technology, applied in anodizing and other directions, can solve problems such as low Tg CTE, reduced bonding force of substrate resin to copper foil, etc., and achieve good oxidation resistance, high peel strength and corrosion resistance. Effect

Inactive Publication Date: 2012-04-18
SHANDONG JINBAO ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

While pursuing its high Tg, low CTE, and halogen-free, it reduces the bonding force of the base resin to the copper foil. The PS of the 35μm (1OZ) copper foil on the general FR-4 can reach 2.0N / mm (11.4 lbf / in), and the PS value of the Halogen-free board with a Tg value of about 150 can only reach about 1.4 N / mm (8 lbf / in)

Method used

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  • Surface treatment process of copper foil for high-Tg halogen-free plate
  • Surface treatment process of copper foil for high-Tg halogen-free plate
  • Surface treatment process of copper foil for high-Tg halogen-free plate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] A surface treatment process of copper foil for high Tg, halogen-free boards, the specific treatment conditions are as follows:

[0056] (1), pickling: H 2 SO 4 150 g / L, temperature 35 ℃, treatment time 4s.

[0057] (2), coarsening: Cu 2+ 18g / L,H 2 SO 4 120g / L, additive T 55 mg / L, temperature 25°C, current density 25A / dm 2 , the processing time is 6.2s.

[0058] (3), curing: Cu 2+ 55g / L,H 2 SO 4 80g / L, temperature 43℃, current density 35A / dm 2 , the processing time is 8s.

[0059] (4), blackening: Ni 2+ 0.8g / L, Zn 2+ 0.25g / L, potassium pyrophosphate 40g / L, temperature 45°C, current density 2.5A / dm 2 , the processing time is 1.5s.

[0060] (5), galvanized: Zn 2+ 5 g / L, K 4 P 2 o 7 80g / L, pH 9.2, temperature 35℃, current density 1.2 A / dm 2 ; Processing time 3s.

[0061] (6), passivation: Cr 3+ 2.0g / L, Zn 2+ 1.4 g / L, Na 2 SO 4 25 g / L, additive P 0.6 g / L, pH 4.5, temperature 28°C, current density 3.0A / dm 2 , the process...

Embodiment 2

[0065] (1), pickling: H 2 SO 4 100 g / L, temperature 25°C, treatment time 4s.

[0066] (2), coarsening: Cu 2+ 10g / L,H 2 SO 4 80g / L, additive T 5 mg / L, temperature 20°C, current density 20A / dm 2 , the processing time is 2s.

[0067] (3), curing: Cu 2+ 40g / L, H 2 SO 460g / L, temperature 40℃, current density 20A / dm 2 , the processing time is 8s.

[0068] (4), blackening: Ni 2+ 0.1g / L, Zn 2+ 0.05g / L, potassium pyrophosphate 20g / L, temperature 20°C, current density 0.5A / dm 2 , the processing time is 0.5s.

[0069] (5), galvanized: Zn 2+ 1 g / L, K 4 P 2 o 7 50g / L, PH 8, temperature 25℃, current density 0.5 A / dm 2 ; Processing time 0.5s.

[0070] (6), passivation: Cr 3+ 1.0g / L, Zn 2+ 0.5 g / L, Na 2 SO 4 20 g / L, additive P 0.2 g / L, pH 4, temperature 25°C, current density 2.0A / dm 2 , the processing time is 4s.

[0071] (7) Silane treatment: epoxy silane coupling agent 0.2%, tetraethoxysilane (TEOS) 0.4%, pH 5.0, temperature 25°C, treatm...

Embodiment 3

[0074] (1), pickling: H 2 SO 4 200 g / L, temperature 40°C, treatment time 5s.

[0075] (2), coarsening: Cu 2+ 25g / L,H 2 SO 4 220g / L, additive T 150 mg / L, temperature 35°C, current density 50A / dm 2 , the processing time is 15s.

[0076] (3), curing: Cu 2+ 75g / L, H 2 SO 4 150g / L, temperature 65℃, current density 50A / dm 2 , the processing time is 25s.

[0077] (4), blackening: Ni 2+ 2.5g / L, Zn 2+ 1.5g / L, potassium pyrophosphate 100g / L, temperature 55°C, current density 10A / dm 2 , the processing time is 5s.

[0078] (5), galvanized: Zn 2+ 7 g / L, K 4 P 2 o 7 180g / L, PH 11, temperature 50℃, current density 1.5 A / dm 2 ; Processing time 5s.

[0079] (6), passivation: Cr 3+ 3.0g / L, Zn 2+ 2 g / L, Na 2 SO 4 30 g / L, additive P 1 g / L, pH 5, temperature 30°C, current density 4.5A / dm 2 , the processing time is 5s.

[0080] (7) Silane treatment: epoxy silane coupling agent 0.4%, tetraethoxysilane (TEOS) 0.6%, pH 6.0, temperature 30°C, trea...

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Abstract

The invention relates to a surface treatment process of a copper foil for a high-Tg halogen-free plate, belonging to the technical field of a production process of a high-precision electrolytic copper foil. In the surface treatment process provided by the invention, a structure shape of a coarsening layer is changed by using a special mixed additive in a coarsening step so as to improve anti-stripping strength; an ultra-fine nanoscale electroplated nickel-zinc alloy is used as a barrier layer to assure the corrosion resistance of the copper foil. Internal properties and pressure plate back color of the copper foil which is treated by the process provided by the invention are similar with those of the copper foil which is imported abroad; the anti-stripping strength on the high-Tg (Tg170) and the halogen-free plate is more than 1.5 N / mm; and the copper foil has characteristic of environmental friendliness and does not contain harmful matters, such as arsenic, antimony, mercury, cadmium, hexavalent chromium and the like.

Description

[0001] technical field [0002] The invention relates to a surface treatment process of copper foil for high Tg and halogen-free boards, and belongs to the technical field of production process of high-precision electrolytic copper foil. Background technique [0003] Electronic copper foil is an important basic raw material for the manufacture of CCL (copper clad substrate) and PCB (printed circuit board). In recent years, various electronic information product technologies in the world have developed rapidly, which has promoted the new progress of PCB towards multilayer, thinner and higher density. Today, with the rapid development of the electronic information industry, copper foil has long been vividly described as a "neural network" for electronic product signal and power transmission and communication. The development of electronic information products puts forward high requirements on CCL and PCB, and also puts forward stricter requirements on the performance and envi...

Claims

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Application Information

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IPC IPC(8): C25D7/06C25D5/10C25D5/48C25D11/02
Inventor 杨祥魁刘建广马学武宋召霞徐策考松波冷新宇
Owner SHANDONG JINBAO ELECTRONICS
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