Low-temperature co-fired ceramic substrate material and preparation method thereof
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A technology of low-temperature co-fired ceramics and ceramic substrates, which is applied in the field of electronic substrate materials to achieve the effects of reduced loss, high dielectric quality factor, and excellent dielectric properties
Active Publication Date: 2012-05-02
威海圆环先进陶瓷股份有限公司
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However, the development of modern technology requires electronic equipment to be reduced in size and weight, and the integration o
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example 1
[0022] 3ZnO-B 2 o 3 Powder preparation:
[0023] 1. Combine ZnO, H 3 BO 3 or B 2 o 3 According to the formula ingredients in Table 1, the total mass is 200 grams, grind it in an agate mortar for about 1 hour to mix evenly, and put it in a 500ml corundum crucible.
[0024] 2. Put the corundum crucible with the oxide raw material into the bell-type furnace, raise the temperature from room temperature to 750°C at 3°C / min, and keep it warm for 1 hour.
[0025] 3. Add deionized water to the pre-burned powder, put it in a planetary ball mill for 3 hours, and dry it at 110°C after discharging.
[0026] 4. Put the powder dried in step (3) through a 40-mesh sieve and put it in a 500ml corundum crucible, raise the temperature from room temperature to 750°C at 3°C / min, and keep it warm for 1 hour.
[0027] 5. Mix the powder obtained in step (4) with deionized water and put it into a planetary ball mill for ball milling for 3 hours, and then dry it at 110°C.
[0028] 6. According ...
example 13～18
[0037] Examples 13-18 all adopt the formula of Example 9, and the process parameters in the preparation process of Examples 13-18 are shown in Table 2.
[0038] The technological parameter of table 2 example 13~18
[0039]
[0040] (Remarks: The heating rate of all examples during sintering is 5°C / min, and the heating rate refers to the heating rate in the temperature range from 600°C to holding temperature)
[0041] The dielectric properties of the above experimental samples were measured with an Agilent E5701C network analyzer, and the results are shown in Table 3.
[0042] Dielectric properties of table 3 experimental samples
[0043]
[0044]
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Abstract
The invention discloses a low-temperature co-fired ceramic substrate material and a preparation method thereof. The ceramic substrate material is zinc borate ceramic of which the main crystalline phase is 3ZnO.B2O3. The ceramic raw material consists of the components of ZnO and H3BO3, wherein the mole percent of the H3BO3 is 60-41.176%, or the raw material consists of chemical components of ZnO and B2O3, wherein the mole percent of the B2O3 is 42.857-25.926%. The preparation method of the ceramic substrate material comprises the steps of firstly presintering to combine 3ZnO.B2O3 powder, then adding deionized water, ball milling, drying, granulating, tableting and sintering. The material disclosed by the invention has a low sintering temperature (950-1000 DEG C) and good microwave dielectric performances: dielectric constant epsilon r = 6.5-6.9, Q*f = 26400-44600 GHz, and the resonant frequency temperature coefficient = -66 to -94 ppm/K, and the dielectric performance requirement of a high-frequency high-speed circuit on the substrate material can be met.
Description
technical field [0001] The invention belongs to the field of electronic substrate materials, and in particular relates to a low-temperature co-fired ceramic substrate material and a preparation method thereof. Background technique [0002] With the rapid development of modern information technology, the miniaturization, light weight, integration and high frequency of electronic circuits have put forward requirements for small size, high frequency, high reliability and high integration of electronic components. The microelectronics technology based on the integration of active devices has developed relatively well, and once became the main technology for the miniaturization of electronic devices. However, the development of modern technology requires electronic equipment to be reduced in size and weight, and the integration of a single active device can no longer meet production applications, so the miniaturization of passive devices has become inevitable. Small and medium-s...
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