Manufacturing method of uniaxial strain SGOI (SiGe-on-Insulator) wafer on SiN buried insulating layer based on mechanical bending table

Abstract

The invention discloses a manufacturing method of a uniaxial strain SGOI (SiGe-on-Insulator) wafer on an SiN buried insulating layer based on a mechanical bending table, and the method comprises the following steps: 1) putting an SGOI wafer on a cambered bending table, wherein the top layer (SiGe layer surface) of the SGOI wafer faces up or down; 2) respectively horizontally putting two cylindrical stainless steel pressure bars on both ends of the SGOI wafer, wherein the two cylindrical stainless steel pressure bars are respectively 1cm away from the edge of the SGOI wafer; 3) slowly rotating a screw cap which connects the pressure bars, so that the SGOI wafer is gradually bent along the cambered table until the SGOI wafer is completely laminated on the cambered table; 4) putting the cambered bending table carrying the SGOI wafer in an annealing furnace, and carrying out annealing; 5) after the annealing finishes, slowly cooling to room temperature, and taking out the cambered bending table carrying the SGOI wafer; and 6) rotating the screw cap which connects the pressure bars, and slowly elevating the pressure bars until the bent SGOI wafer restores to the original state. The method disclosed by the invention has the advantages of 1) favorable thermal properties, 2) high strain effect, 3) small surface roughness, 4) wide annealing temperature range, 5) fewer manufacturing devices which can be self-made, and 6) simple manufacturing technique.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to a semiconductor material manufacturing technology. Specifically, it is a new method of manufacturing uniaxially strained SGOI (Silicon Germanium On Insulator, silicon germanium on insulating layer) wafers based on SiN (aluminum nitride) buried insulating layer, which can be used to make ultra-high-speed, low-power, SGOI wafers required for radiation-resistant semiconductor devices and integrated circuits can significantly enhance the electron mobility and hole mobility of SGOI wafers, and improve the electrical performance of SGOI devices and circuits. Background technique [0002] Strained SiGe (silicon germanium) has many advantages such as high operating frequency of devices and circuits, low power consumption, cheaper than GaAs, compatibility with Si CMOS technology, and low cost. It is used in microwave devices, mobile communications, high-frequency circuits and other ...

AI Technical Summary

Problems solved by technology

[0012] The main disadvantages of this technology are: 1) the process steps are complex: the method must undergo thermal oxidation, H + Ion implantation, stripping annealing and other essential processes and related steps

3) Long production cycle: additional thermal oxidation, H + Process steps such as ion implantation and stripping annealing increase the time of its fabrication

4) Low yield: This method is to use two overlapping silicon wafers for mechanical bending and bonding, and to perform high-temperature peeling in the bent state, and the silicon wafers are easily broken

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