Manufacturing method of uniaxial strain SGOI (SiGe-on-Insulator) wafer on SiN buried insulating layer based on mechanical bending table

A production method and uniaxial strain technology, applied in the field of microelectronics, can solve the problems of easily broken silicon wafers, complex process steps, long production cycle, etc., and achieve low surface roughness, simple production process, and few production equipment. Effect

Inactive Publication Date: 2012-05-02
XIDIAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] The main disadvantages of this technology are: 1) the process steps are complex: the method must undergo thermal oxidation, H + Ion implantation, stripping annealing and other essential processes and related steps
3) Long production cycle: additional thermal oxidation, H + Process steps such as ion implantation and stripping annealing increase the time of its fabrication
4) Low yield: This method is to use two overlapping silicon wafers for mechanical bending and bonding, and to perform high-temperature peeling in the bent state, and the silicon wafers are easily broken

Method used

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  • Manufacturing method of uniaxial strain SGOI (SiGe-on-Insulator) wafer on SiN buried insulating layer based on mechanical bending table
  • Manufacturing method of uniaxial strain SGOI (SiGe-on-Insulator) wafer on SiN buried insulating layer based on mechanical bending table
  • Manufacturing method of uniaxial strain SGOI (SiGe-on-Insulator) wafer on SiN buried insulating layer based on mechanical bending table

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Embodiment 1: Preparation of 4-inch uniaxially strained SGOI wafer

[0036] 1. SGOI wafer selection: 4-inch (100) or (110) wafer ((100) or (110) refers to a certain crystal surface of the SGOI wafer crystal surface), Si substrate thickness 0.4mm, The SiN buried insulating layer is 500nm thick, and the top SiGe layer is 500nm thick.

[0037] SGOI wafer diameter selection: the larger the diameter of the SGOI wafer, the smaller the minimum bending radius of its bending, the greater the strain of the obtained uniaxially strained SGOI wafer, and the final electron migration of the uniaxially strained SGOI wafer The enhancement of rate and hole mobility is also higher. For the uniaxially strained SGOI wafer based on the SiN buried insulating layer produced in the present invention, SGOI wafers with different diameters from inches to 12 inches can be selected according to the different processes of the SGOI devices and circuits.

[0038] SGOI wafer crystal plane and crystal ...

Embodiment 2

[0056] Embodiment 2: Preparation of 5-inch uniaxially strained SGOI wafer

[0057] 1. SGOI wafer selection: 5-inch (100) or (110) crystal plane, Si substrate thickness 0.55mm, SiN buried insulating layer thickness 300nm, top SiGe thickness 50nm.

[0058] 2. Selection of bending radius of curvature: According to the selected SGOI wafer, the radius of curvature of the bending table is selected to be 0.75m.

[0059] 3. SGOI wafer bending process steps:

[0060] 1) Place the top Si layer of the SGOI wafer upwards (or downwards) on a clean bending table, with its or direction parallel to the bending direction, such as image 3 or Figure 4 shown;

[0061] 2) Two cylindrical horizontal pressure bars on the bending table are placed horizontally at both ends of the SGOI wafer, 1 cm away from its edge;

[0062] 3) Rotate the ejector nut of one of the pressure rods on the bending table to fix one end of the SGOI wafer first;

[0063] 4) Slowly turn the ejector nut of another pres...

Embodiment 3

[0070] Through the above process steps, a 5-inch uniaxially strained SGOI wafer based on a SiN buried insulating layer can be obtained. Embodiment 3: Preparation of 8-inch uniaxially strained SGOI wafer

[0071] 1. SGOI wafer selection: 8-inch (100) or (110) crystal plane, Si substrate thickness 0.68mm, SiN buried insulating layer thickness 1000nm, top SiGe thickness 1000nm.

[0072] 2. Selection of bending radius of curvature: According to the selected SGOI wafer, the radius of curvature of the bending table is selected to be 0.5m.

[0073] 3. SGOI wafer bending process steps:

[0074] 1) Place the SiGe layer on the top layer of the SGOI wafer upwards (or downwards) on the arc-shaped bending table, and its bending direction is parallel to the or direction, such as image 3 or Figure 4 shown;

[0075] 2) Two cylindrical horizontal pressure bars on the bending table are placed horizontally at both ends of the SGOI wafer, 1 cm away from its edge;

[0076] 3) Rotate the e...

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Abstract

The invention discloses a manufacturing method of a uniaxial strain SGOI (SiGe-on-Insulator) wafer on an SiN buried insulating layer based on a mechanical bending table, and the method comprises the following steps: 1) putting an SGOI wafer on a cambered bending table, wherein the top layer (SiGe layer surface) of the SGOI wafer faces up or down; 2) respectively horizontally putting two cylindrical stainless steel pressure bars on both ends of the SGOI wafer, wherein the two cylindrical stainless steel pressure bars are respectively 1cm away from the edge of the SGOI wafer; 3) slowly rotating a screw cap which connects the pressure bars, so that the SGOI wafer is gradually bent along the cambered table until the SGOI wafer is completely laminated on the cambered table; 4) putting the cambered bending table carrying the SGOI wafer in an annealing furnace, and carrying out annealing; 5) after the annealing finishes, slowly cooling to room temperature, and taking out the cambered bending table carrying the SGOI wafer; and 6) rotating the screw cap which connects the pressure bars, and slowly elevating the pressure bars until the bent SGOI wafer restores to the original state. The method disclosed by the invention has the advantages of 1) favorable thermal properties, 2) high strain effect, 3) small surface roughness, 4) wide annealing temperature range, 5) fewer manufacturing devices which can be self-made, and 6) simple manufacturing technique.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to a semiconductor material manufacturing technology. Specifically, it is a new method of manufacturing uniaxially strained SGOI (Silicon Germanium On Insulator, silicon germanium on insulating layer) wafers based on SiN (aluminum nitride) buried insulating layer, which can be used to make ultra-high-speed, low-power, SGOI wafers required for radiation-resistant semiconductor devices and integrated circuits can significantly enhance the electron mobility and hole mobility of SGOI wafers, and improve the electrical performance of SGOI devices and circuits. Background technique [0002] Strained SiGe (silicon germanium) has many advantages such as high operating frequency of devices and circuits, low power consumption, cheaper than GaAs, compatibility with Si CMOS technology, and low cost. It is used in microwave devices, mobile communications, high-frequency circuits and other ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/74
Inventor 戴显英李志邵晨峰王船宝郝跃张鹤鸣王晓晨
Owner XIDIAN UNIV
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