Preparation method of poly(3,4-ethylene dithio-thiofuran) aqueous dispersion
A technology of ethylene dithiothiophene and dispersion, which is applied in the field of preparation of polythiophene derivative poly(3,4-ethylene dithiothiophene) aqueous dispersion, which can solve unsuitable scale synthesis, limited processing and application , unstable state and other problems, to achieve the effect of low equipment requirements, simple preparation method, and mild production conditions
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Embodiment 1
[0016] A kind of preparation method of poly(3,4-ethylenedithiothiophene) aqueous dispersion
[0017] Under the protection of nitrogen, 0.6134 g (3.517 mmol) of monomer 3,4-ethylenedithiothiophene was added dropwise to 1.5 wt% polystyrene sulfonic acid (weight average molecular weight M w 75,000, 1.231 g) in an aqueous solution, mechanically stirred at a speed of 500 rpm under the condition of a water bath at 25 °C, after 15 minutes, add the oxidant sodium persulfate with a molar ratio of 1.2:1 to the monomer, after 5 minutes, Add ferric sulfate with a molar ratio of 1:0.005 to sodium persulfate, and continue stirring for 24 hours. After the reaction is over, add twice the volume of deionized water to the reaction system to dilute, then add anion (201×7 type) and cation (001×7 type) ion exchange resins in sequence, and keep stirring for 7 hours each time. The sand core funnel was suction filtered to obtain the polymer aqueous dispersion, which was subjected to rotary evaporat...
Embodiment 2
[0019] Preparation of Poly(3,4-Ethylenedithiothiophene) Conductive Thin Film
[0020] The aqueous dispersion of poly(3,4-ethylenedithiothiophene) prepared in Example 1 was used to spread on the substrate by casting film coating method, and the polymer film was obtained after drying treatment. The adopted substrate is PP or PET plastic substrate. The drying conditions used were drying in a blast oven at a temperature of 80 °C for 12 hours. The thickness of the obtained polymer film is 5-10 microns, which can be peeled off from the base material and cut into various shapes. The conductivity of the film is tested by the four-electrode method, and the value is 1.0×10 -4 ~4.5×10 -3 Siemens / cm.
Embodiment 3
[0022] Preparation of poly(3,4-ethylenedithiothiophene) conductive coating
[0023] This embodiment is similar to Embodiment 3, except that the film coating method used is spin coating, and the substrate used is ITO glass. The spin-coating parameters adopted are: cloth glue (600 rpm, 10 seconds), uniform glue (2200 rpm, 18 seconds). The heating conditions adopted are: heating by electric heating plate, the temperature is 60°C, and the heating time is 30-80 seconds. The thickness of the obtained conductive coating is 100-200 nanometers, and the conductivity is 8.0×10 -5 ~3.0×10 -4 Siemens / cm, visible light transmittance 80% to 90%.
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