1results about How to "Excellent electrical conductivity" patented technology

This invention relates to an enhancement-mode GaN HEMT device based on RESURF electric field modulation, belonging to the field of semiconductor power device technology. The invention aims to solve the technical problem of limited breakdown voltage caused by concentrated electric field at the gate edge in traditional enhancement-mode GaN HEMTs. The main technical solution involves introducing a p-type doped region within the AlGaN barrier layer of the device, located between the gate and drain. This structure utilizes the RESURF effect to effectively modulate and homogenize the electric field distribution in the gate-drain drift region when the device is off, thereby significantly improving the breakdown voltage of the device and optimizing the power factor while maintaining good switching characteristics.