Copper film containing tungsten nitride for improving thermal stability, electrical conductivity and electric leakage properties and a manufacturing method for the copper film

Inactive Publication Date: 2005-11-17
JINN P CHU
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Benefits of technology

[0015] A first main objective of the present invention is to provide a copper film that contains dilute tungsten nitride, whereby the copper film has

Problems solved by technology

However, these cupric materials have poor mechanical properties at high temperatures and thus are used at low operational temperatures, whereby the cupric materials can not be used efficiently and temperature limitation restricts further applications of t

Method used

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  • Copper film containing tungsten nitride for improving thermal stability, electrical conductivity and electric leakage properties and a manufacturing method for the copper film
  • Copper film containing tungsten nitride for improving thermal stability, electrical conductivity and electric leakage properties and a manufacturing method for the copper film
  • Copper film containing tungsten nitride for improving thermal stability, electrical conductivity and electric leakage properties and a manufacturing method for the copper film

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[0038] A copper film containing tungsten nitride in accordance with the present invention is adapted to be formed on a silicon substrate and comprises a copper layer in form of a supersaturated solid solution and tungsten nitride present inside the copper layer that is in structure of nano-crystallite. Composition of a copper film containing the tungsten nitride has atomic ratios of more than 97.5% in copper, 0.5 to 1.5% in tungsten, and less than 2.0% in nitrogen. All atomic ratios above are on a basis of total atoms in the copper film.

[0039] A method for manufacturing the copper film containing tungsten nitride on the silicon substrate in the present invention comprises acts of: [0040] preparing a vacuum sputtering system having a pressure within 1×102−1×10−3 torr and 1.4-3.7 W / m2W sputtering power; [0041] introducing argon and nitrogen into the vacuum sputtering system to create an Ar / N2 atmosphere; [0042] optionally, adjusting a non-overlapping area between a copper target and ...

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Abstract

A copper film containing tungsten nitride is manufactured by co-sputtering method under an Ar/N2 atmosphere and has a composition in ratio of tungsten nitride contained in the copper layer in atomic ratios of more than 97.5% in copper, 0.5 to 1.5% in tungsten and of less than 2.0% in nitrogen. By adding the tungsten nitride, the copper film has improvements in thermal stability, good electrical conductivity and low electrical leakage current. Moreover, the copper film attached on a silicon substrate will generate a self-passivated silicon compound layer to serve as a diffusion barrier layer between the copper film and the silicon substrate during annealing.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a copper film, and more particularly to a copper film that contains insoluble tungsten nitride in saturated situation to improve thermal stability, electrical conductivity, and electric leakage of the copper film by magnetron sputtering. A manufacturing method for the copper film is also disclosed in the present invention. [0003] 2. Description of Related Art [0004] Because cupric materials such as copper and cupric alloy have excellence in each of electrical conductivity, thermal conductivity, and mechanical properties at room temperature, these cupric materials are commonly used in the semiconductor field. However, these cupric materials have poor mechanical properties at high temperatures and thus are used at low operational temperatures, whereby the cupric materials can not be used efficiently and temperature limitation restricts further applications of these cupric materials. [0...

Claims

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Application Information

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IPC IPC(8): C25D3/58C25D5/50H01L21/3205
CPCC25D5/50C25D3/58
Inventor CHU, JINN P.LIN, CHON-HSIN
Owner JINN P CHU
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