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Method for preparing high-purity silicon powder through microwave plasma torch

A technology of microwave plasma and high-purity silicon powder, applied in chemical instruments and methods, silicon, silicon compounds, etc., can solve the problems of high energy consumption and serious environmental pollution, and achieve the advantages of protecting the environment, fewer process steps, and reducing pollution. Effect

Inactive Publication Date: 2012-06-13
CHANGZHOU INST OF DALIAN UNIV OF TECH +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The former has high energy consumption and serious environmental pollution, which runs counter to the development of clean energy to improve the environment
The latter has less environmental pollution, but the energy consumption is relatively high, and the purity of the purified silicon material is generally not more than 99.99999%.

Method used

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  • Method for preparing high-purity silicon powder through microwave plasma torch

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Effect test

Embodiment 1

[0018] A method for preparing high-purity silicon powder with a microwave plasma torch:

[0019] The first step: pretreatment: first vacuumize the equipment chamber to 1.8×10 -4 Pa, and then filled with 1 atmosphere of inert gas. High-purity SiCl with a purity of 99.9993% 4 Gas and hydrogen with a purity of 99.92% are uniformly mixed according to the volume ratio of 1:1 to form a mixed gas, and the mixed gas is passed into the discharge chamber of the microwave plasma torch at a flow rate of 500 ml / min through the gas supply pipe, and the pressure in the discharge chamber is 1 Atmospheric pressure, turn on the power supply of the microwave plasma torch, and discharge when the microwave power is 500W to generate a microwave plasma torch;

[0020] Step 2: Preparation of high-purity silicon powder: adjust the power of the microwave plasma torch to 1000W. Under the action of the plasma torch, the mixed gas is decomposed to obtain high-purity silicon powder with a purity of 99.99...

Embodiment 2

[0023] A method for preparing high-purity silicon powder with a microwave plasma torch:

[0024] The first step: pretreatment: first vacuumize the equipment chamber to 1.6×10 -4 Pa, and then filled with 1 atmosphere of inert gas. High-purity SiH with a purity of 99.9991% 4 The gas is uniformly mixed with hydrogen + argon with a purity of 99.93% according to the volume ratio of 1:3 to form a mixed gas, and the mixed gas is passed into the discharge chamber of the microwave plasma torch at a flow rate of 2000 ml / min through the air supply pipe, and the air pressure in the discharge chamber When the pressure is 1 atmosphere, turn on the power supply of the microwave plasma torch, and discharge it when the microwave power is 3000W to generate a microwave plasma torch;

[0025] Step 2: Preparation of high-purity silicon powder: adjust the power of the microwave plasma torch to 3000W. Under the action of the plasma torch, the mixed gas is decomposed to obtain high-purity silicon p...

Embodiment 3

[0028] A method for preparing high-purity silicon powder with a microwave plasma torch:

[0029] The first step: pretreatment: first vacuumize the equipment chamber to 1.5×10 -4 Pa, and then filled with 1 atmosphere of inert gas. High-purity SiClH with a purity of 99.9995% 3 The gas and hydrogen with a purity of 99.94% are uniformly mixed according to the volume ratio of 1:2 to form a mixed gas, and the mixed gas is passed into the discharge chamber of the microwave plasma torch through the gas supply pipe at a flow rate of 1000 ml / min, and the pressure in the discharge chamber is 1 Atmospheric pressure, turn on the power supply of the microwave plasma torch, and discharge when the microwave power is 2000W to generate a microwave plasma torch;

[0030] Step 2: Preparation of high-purity silicon powder: adjust the power of the microwave plasma torch to 2000W. Under the action of the plasma torch, the mixed gas is decomposed to obtain high-purity silicon powder with a purity o...

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Abstract

The invention belongs to the technical field of high purity poly-silicon preparation, which particularly relates to a method for preparing high-purity silicon powder through a microwave plasma torch technology. The method adopts a microwave plasma torch to separate mixed gas of uniformed mixed high-purity raw gas and diluent gas, high-purity silicon powder is obtained after the separation of gas and powder, ingot casting or monocrystal pulling is performed in a vacuum melting furnace, so that high-purity silicon ingot is obtained, residual gas is conducted to tail gas treatment, separated raw gas is reused, and obtained chlorine gas or hydrogen chloride gas is prepared into side products. The method can be performed in the atmosphere, reduces the time and energy consumption during vacuum melting, is energy-saving and efficient, has less process steps and reduces the level of pollution from exogenous impurity, the purity of obtained silicon powder is high, produced tail gas can be reused and prepared into side products, the energy waste is reduced, and the environment is protected.

Description

technical field [0001] The invention belongs to the technical field of high-purity polysilicon preparation, in particular to a method for preparing high-purity silicon powder. Background technique [0002] Atmospheric microwave plasma torch refers to the plasma with microwave energy as the excitation source working under one atmospheric pressure. Like other energy source plasmas, the electron temperature is mainly between 1 and 20eV, and the electron number density is between 10 12 m - 3 to 10 25 m - 3 between. Atmospheric microwave plasma torch device not only does not need to configure and maintain expensive vacuum equipment, but also can be applied to continuous processing, making mass production possible, so it has received extensive attention from researchers. Its application fields mainly include waste gas treatment, material processing and synthesis, elemental spectral analysis, etc. [I. A. Ahmed, R. W. Stephen, L. Jim , and D. Y. Jiu, IEEE, Transactions on plas...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/03C01B33/029
CPCY02P20/10
Inventor 吴爱民林国强谭毅李佳艳邹瑞洵
Owner CHANGZHOU INST OF DALIAN UNIV OF TECH
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