Nano-electromechanical resonant sensor based on graphene sheet layer and manufacturing method thereof
A resonant sensor, graphene sheet technology, applied in piezoelectric devices/electrostrictive devices, processes for producing decorative surface effects, piezoelectric/electrostrictive/magnetostrictive devices, etc. Low-pass filtering of olefin resonators, unfavorable large-scale, mass production, complex optical path design, etc., achieve the effect of small quality, elimination of low-pass filtering phenomenon, and strong controllability
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[0013] The structure of the nanoelectromechanical resonant sensor based on the graphene sheet in the present invention is as follows: figure 1 shown. A P-type silicon wafer with a low impurity concentration is used as a substrate, that is, a P-Si substrate 1, and two N + Regions, namely the drain-N type doped region 3 and the source-N type doped region 8, are on the surface of the P-Si substrate 1, and are located in the drain-N type doped region 3 and the source-N type In the middle of the doped region 8, two SiO 2 Anchor region 5, in two SiO 2 On the anchor area 5 is a graphene two-ends-fixed beam 9, and the two ends of the graphene-two-ends-fixed beam 9 are respectively suspended from two SiO 2 On the anchor region 5 , a top gate electrode 6 connected to the graphene double-end fixed beam 9 is arranged on one end of the graphene double-terminal fixed beam 9 . The drain electrode 4 and the source electrode 7 are located on the drain-N type doped region 3 and the source-...
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