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Method for preparing ferroelectric single crystal lead indium niobate-lead titanate

A technology of lead indium niobate and ferroelectric single crystal, applied in the field of crystal technology and functional materials

Inactive Publication Date: 2012-07-11
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

To date, there are no publications disclosing the growth of PIN-PT crystals by the top-seeding method

Method used

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  • Method for preparing ferroelectric single crystal lead indium niobate-lead titanate
  • Method for preparing ferroelectric single crystal lead indium niobate-lead titanate
  • Method for preparing ferroelectric single crystal lead indium niobate-lead titanate

Examples

Experimental program
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Effect test

Embodiment 1

[0028] The top seed method is used to grow PIN-PT ferroelectric single crystal, and the growth furnace device is as follows figure 1 shown.

[0029] The initial raw material PbO or Pb 3 o 4 ,, In 2 o 3 、TiO 2 , Nb 2 o 5 , co-solvent using PbO or Pb 3 o 4 and H 3 BO 3 or B 2 o 3 Composite co-solvent, weighed according to the proportion, mixed and ground. Put the uniformly mixed powder into a platinum crucible, and place the platinum crucible in a crystal growth furnace to form the material. Heat the prepared material above the supersaturation temperature, keep the temperature for a certain period of time, and use the seed crystal to find the growth point for growth; grow at about 850-1200 °C, the seed crystal rod rotates during the growth process, and the crystal rotation rate is less than 50rpm, depending on the growth status Adjust forward and reverse. During the growth process, the temperature is properly cooled, and the cooling rate is less than 10°C / day; whe...

Embodiment 2

[0031] With the PIN-PT growth ferroelectric crystal material in embodiment 1 ( figure 2 Shown) for structural and performance testing, preferably component 0.655PIN-0.345PT for structural and performance testing.

[0032] a) Cut the crystal into a small piece and grind it into powder for powder diffraction. Show that the room temperature 0.655PIN-0.345PT ferroelectric crystal is a trigonal perovskite structure ( image 3 shown).

[0033] b) Cut the obtained ferroelectric crystal material into a small slice according to the (001) direction, and then smooth both sides of the slice with different sandpapers. Coat silver electrodes on both sides that are sanded smooth. Measure the dielectric temperature spectrum of 0.655PIN-0.345PT ferroelectric crystal, the temperature is from 0℃ to 350℃. Dielectric thermogram showing the Curie temperature T of the obtained ferroelectric crystal material C is 290°C; the trigonal-tetragonal phase transition temperature T is obtained from the...

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Abstract

The invention relates to a method for preparing a ferroelectric single crystal lead indium niobate-lead titanate, and belongs to the field of crystal growth. The preparation method comprises the following steps of: mixing raw materials, dissolving, growing, and the like, namely a PIN-PT crystal is successfully grown by a top seeded solution growth (TSSG) method. The structure and ferroelectric, dielectric and piezoelectric properties of the crystal are analyzed through X-ray powder diffraction and ferroelectric, dielectric and piezoelectric measurement. Preferably, the 0.655PIN-0.345PT crystal has high Curie temperature and rhombohedral-tetragonal phase change temperature, high piezoelectric property and electromechanical coupling property and a wide application prospect. The method is convenient to operate and suitable for batch growth, equipment is simple, and a high-quality large-size PIN-PT crystal can be stably provided.

Description

technical field [0001] The invention relates to a preparation method of ferroelectric single crystal lead indium niobate-lead titanate. In particular, the present invention relates to a ferroelectric single crystal material (1-x)Pb(In 1 / 2 Nb 1 / 2 )O 3 -xPbTiO 3 (abbreviated as PIN-PT or PINT) top seed crystal growth, belongs to the field of crystal technology and functional materials. Background technique [0002] Ferroelectric / piezoelectric materials are widely used in various functional devices, such as sensors, transducers, sonar, drivers, filters, micro-speakers, etc., due to their excellent electromechanical conversion performance and fast response speed. It plays an irreplaceable and important role in national defense and security. Barium titanate (BaTiO) was discovered in the 1940s 3 ) piezoelectric materials, lead zirconate titanate (Pb(Zr 1-x Ti x )O 3 ), referred to as PZT. PZT ceramic material is a traditional piezoelectric material widely used in transdu...

Claims

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Application Information

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IPC IPC(8): C30B9/00C30B29/32C30B29/30
Inventor 何超龙西法李修芝王祖建刘颖
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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