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Process for preparing ultrathin gradient ZrGeN/CuGe composite barrier layer with high thermal stability

A preparation process and barrier layer technology, applied in the field of ultra-thin, high thermal stability ZrGeN/CuGe composite gradient barrier layer preparation process, to achieve low cost, reduce the thickness of the barrier layer, and reduce the effect of resistivity

Inactive Publication Date: 2014-08-20
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the ternary transition group refractory metal nitrides that have been reported so far, such as TaSiN, WGeN, ZrSiN, HfGeN, etc., have relatively thick films (about 40 nm), which are far from meeting the requirements of 65 nm and below interconnection technology; moreover , ternary transition group refractory metal nitrides usually have recrystallization phenomenon at temperatures above 700 ° C. Therefore, the performance of ultra-thin (<5 nm) ternary transition group refractory metal nitride barrier layers faces great challenges

Method used

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  • Process for preparing ultrathin gradient ZrGeN/CuGe composite barrier layer with high thermal stability
  • Process for preparing ultrathin gradient ZrGeN/CuGe composite barrier layer with high thermal stability

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Embodiment 1

[0035] The preparation process of the ZrGeN / CuGe composite gradient barrier layer used in this embodiment includes the following steps:

[0036] a. Clean the substrate material:

[0037] After cleaning the single crystal silicon as the substrate material with hydrofluoric acid for 15 minutes, put it into acetone and absolute ethanol for 20 minutes of ultrasonic cleaning respectively, put it into a vacuum chamber after drying, and then evacuate to a degree of 2.0×10 -4 Pa;

[0038] b. Treatment of the substrate before deposition:

[0039] Keep the background vacuum of the vacuum chamber at 2.0×10 -4 Under Pa, clean with bias backsputter for 10 minutes and pre-sputter for 5 minutes to remove Si substrate and target impurities; backsputter power is 150 W; pre-sputter power is 150 W; backsputter bias and pre-sputter bias The pressures are -500 V and -150 V respectively; the back-splash and pre-splash gases are both Ar; the working vacuum is 2.0 Pa;

[0040] c. Deposition of ...

Embodiment 2

[0049] The operation steps of this embodiment, the coating equipment used and other working conditions are all the same as in Example 1, and the deposition thickness of the double-layer gradient diffusion barrier layer is kept constant at 15 nm, and the deposition time of the ZrGeN layer, the ZrGeN gradient layer and the CuGe layer is adjusted. , so as to change the thickness of the ZrGeN layer, the ZrGeN gradient layer and the CuGe layer in the double-layer gradient diffusion barrier layer, and also meet its ultra-thin and high thermal stability performance.

[0050] In this example, the deposition time of the ZrGeN layer is 20 s, and the deposition thickness is 3 nm; the deposition time of the ZrGeN gradient layer is 40 s, and the deposition thickness is 5 nm; the deposition time of the CuGe layer is 21 s, and the deposition thickness is 7 nm. ZrGeN (8 nm) / CuGe (7 nm) composite graded barrier layer sample. The obtained samples were annealed in vacuum at 750°C for 40 min an...

Embodiment 3

[0052] The operation steps of this embodiment, the coating equipment used and other working conditions are all the same as in Example 1, and the deposition thickness of the double-layer gradient diffusion barrier layer is kept constant at 15 nm, and the deposition time of the ZrGeN layer, the ZrGeN gradient layer and the CuGe layer is adjusted. , so as to change the thickness of the ZrGeN layer, the ZrGeN gradient layer and the CuGe layer in the double-layer gradient diffusion barrier layer, and also meet its ultra-thin and high thermal stability performance.

[0053] In this example, the deposition time of the ZrGeN layer is 8 s, and the deposition thickness is 1 nm; the deposition time of the ZrGeN gradient layer is 32 s, and the deposition thickness is 4 nm; the deposition time of the CuGe layer is 30 s, and the deposition thickness is 10 nm. ZrGeN (5 nm) / CuGe (10 nm) composite graded barrier layer samples. The obtained samples were tested by XRD after vacuum annealing at...

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Abstract

The invention discloses a process for preparing an ultrathin gradient ZrGeN / CuGe composite barrier layer with high thermal stability applied in an ultradeep submicron integration circuit copper (Cu) interconnection technology. The thermal stabilized temperature of the ultrathin gradient ZrGeN (5nm) / CuGe (10nm) composite barrier layer deposited by the process is up to higher than 750 DEG C. The gradient ZrGeN (5nm) / CuGe (10nm) dispersion barrier layer prepared by the method can effectively reduce the resistivity of an interconnection film system, reduce the resistance capacity (RC) coupling delay effect, increase the running speed of a semiconductor device and improve the stability of the semiconductor device.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuit manufacturing technology, and relates to a preparation technology of an ultra-thin and high thermal stability ZrGeN / CuGe composite gradient barrier layer suitable for deep submicron Cu interconnection. Background technique [0002] Today, the mainstream VLSI interconnection process has adopted copper (Cu) interconnection materials and low dielectric constant (low -k ) to replace traditional Al / SiO 2 structure to deal with the sharply increased resistance-capacitance ( RC ) delay effect and power dissipation effect. Because Cu is easily oxidized and easily reacts with Si and Si-based oxide dielectrics at low temperatures (<200 °C) to form deep-level impurities, which have a strong trap effect on carriers, degrading or even failing device performance, see Literature [B. Liu, Z.X. Song, Y.H. Li, K.W. Xu, Appl. Phys. Lett. 93 / 17 (2008)]. Therefore, how to select the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/203H01L21/768
Inventor 刘波张彦坡展长勇任丁林黎蔚
Owner SICHUAN UNIV
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