Thin film solar cell and method for manufacturing the same

Abstract

The present invention relates to a thin-film solar cell and a manufacturing method thereof, wherein the thin-film solar cell includes: a substrate; a first electrode disposed on the substrate; a barrier layer disposed on the first electrode, wherein the barrier layer The material is a conductive material; an ohmic contact layer is arranged on the barrier layer; an absorption layer is arranged on the ohmic contact layer; a buffer layer is arranged on the absorption layer; a transparent conductive layer is arranged on the buffer layer; and a second electrode is arranged on the transparent conductive layer.

Description

technical field [0001] The invention relates to a thin-film solar cell and a manufacturing method thereof, in particular to a copper-indium-selenium-based thin-film solar cell and a manufacturing method thereof. Background technique [0002] With the development of human civilization, the world is facing serious problems such as energy crisis and environmental pollution. Among them, the solar cell, which can directly convert solar energy into electrical energy, is a renewable and environmentally friendly power generation method because it does not generate greenhouse gases such as carbon dioxide and does not pollute the environment during the power generation process. At present, solar cells made of various materials have been developed, such as silicon-based solar cells, dye-sensitized solar cells, and organic material cells. [0003] Among them, the copper indium selenium (CuInSe) solar cell with copper indium gallium selenide (CIGS) or copper indium aluminum selenium (CI...

AI Technical Summary

Problems solved by technology

Although, MoSe 2 The junction can be in ohmic contact, but under the high temperature and high pressure selenization process environment, it often leads to too thick molybdenum layer being converted into MoSe 2 , while too thick MoSe 2 It will lead to an increase in series resistance, and even affect the adhesion of the absorbing layer, causing the absorbing layer to detach or fall off

In addition, if the low-pressure selenization process is used, it can avoid the too thick molybdenum layer from being converted into MoSe 2 , but the formed absorption layer tends to present a granular structure stack, resulting in insufficient flatness and the formation of a rough absorption layer surface, resulting in insufficient coverage of the buffer layer film, resulting in excessive leakage current, resulting in reduced conversion efficiency

In addition, the granular structure stacking of the absorbing layer also increases the probability of carrier recombination and reduces the conversion efficiency.

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