Low cost solution method for preparing solar cell absorption layer material Cu2ZnSnS4

A technology for solar cells and absorbing layers, which is applied in the manufacture of circuits, electrical components, and final products. It can solve the problems of high cost restricting the development of CIGS, and achieve the effects of controllable film composition and thickness, low manufacturing cost, and no need for equipment.

Inactive Publication Date: 2012-07-18
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As of the end of 2010, its highest conversion efficiency has reached 20.3%, but the toxicity of its constituent elements Se and the high cost of In and Ga have seriously restricted the development of CIGS.

Method used

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  • Low cost solution method for preparing solar cell absorption layer material Cu2ZnSnS4
  • Low cost solution method for preparing solar cell absorption layer material Cu2ZnSnS4
  • Low cost solution method for preparing solar cell absorption layer material Cu2ZnSnS4

Examples

Experimental program
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Effect test

Embodiment 1

[0044] (1). First, the surface of the substrate is cleaned. The molybdenum-coated glass substrate is ultrasonically cleaned with acetone, alcohol and deionized water for 10 minutes in sequence. The cleaned substrate can be used directly without drying. Subsequently, a copper-tin-containing binary or ternary sulfide mixed film is prepared on the substrate by adsorption deposition of continuous ion layers. Analytical pure stannous chloride (SnCl 2 2H 2 O) and copper chloride (CuCl 2 2H 2 (0) is configured into a cation mixed solution with a concentration of 0.025 M and 0.05 M, and its pH value is 5; then use analytically pure sodium sulfide (Na 2 S·9H 2 O) It is configured as a 0.05 M anion solution with a pH value of 14. Place 4 beakers in a row, inside which are respectively placed a cation mixed solution containing copper chloride and stannous chloride, deionized water, an anion solution containing sodium sulfide, and deionized water. Each cup corresponds to the continuo...

Embodiment 2

[0049] (1). By the method described in embodiment 1, the purity of all raw materials used is all the same, and here substrate is conductive glass. Among them, continuous ion layer adsorption deposition is used to prepare binary or ternary sulfide mixed films containing copper and tin on the substrate. Wherein the cationic solution is a mixed solution of copper sulfate and stannous sulfate. The concentrations of copper sulfate and stannous sulfate were 0.04 M and 0.08 M, respectively. Potassium sulfide solution was used as anion solution with a concentration of 0.1 M. The pH values ​​of the cation solution and the anion solution are 3 and 14 respectively, and the adsorption, washing, reaction and washing times in one cycle of continuous ion layer adsorption deposition are 60s, 120s, 60s, 120s respectively, and the deposition cycle is 40 cycles.

[0050] (2). Use a chemical bath to deposit a layer of ZnS film on the surface of the film. The deposition solution used a mixed so...

Embodiment 3

[0053] (1). According to the method described in Example 1, the purity of all raw materials used is the same, and the substrate here is metal foil. Subsequently, a copper-tin-containing binary or ternary sulfide mixed film is prepared on the substrate by adsorption deposition of continuous ion layers. Wherein the cation solution uses a mixed solution of copper acetate and tin protochloride. The concentrations of copper acetate and stannous chloride were 0.02 M and 0.04 M, respectively. The anion solution uses ammonium sulfide solution with a concentration of 0.02 M. The pH values ​​of the cation solution and the anion solution were 5 and 14 respectively, and the adsorption, washing, reaction and washing times in one cycle of continuous ion layer adsorption deposition were 60s, 120s, 60s, 120s, respectively, and the deposition cycle was 80 cycles.

[0054] (2). Use a chemical bath to deposit a layer of ZnS film on the surface of the film. As the deposition solution, a mixed ...

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Abstract

The invention relates to a low cost solution method for preparing a solar cell absorption layer material Cu2ZnSnS4 and belongs to the technical field of solar cell materials and devices. The method includes that firstly a binary or ternary sulfide hybrid thin film containing copper and tin is deposited on the substrate by means of successive ion layer absorption deposition, then a layer of a zinc sulfide thin film is deposited on the binary or ternary sulfide hybrid thin film containing copper and tin by means of chemical bath to obtain a precursor thin film, and the precursor thin film is subjected to a certain annealing process in the sulfur atmosphere to obtain the Cu2ZnSnS4 absorption layer. The low cost solution method for preparing the solar cell absorption layer material Cu2ZnSnS4 has the advantages that the raw material source is rich, the raw material cost is low, complicated devices are not required, the preparation process is simple, the preparation cost is low, and the components and the thickness of the thin film are controllable.

Description

technical field [0001] The invention relates to the technical field of solar cell materials and devices, in particular to a solar cell absorbing layer material Cu 2 ZnSnS 4 method of preparation. [0002] Background technique [0003] Global energy shortages, environmental pollution, and climate warming are increasingly plaguing human society. Seeking green alternative energy to achieve sustainable development has become a common issue faced by all countries in the world. In the long run, renewable energy will be the main source of energy for human beings in the future. In the utilization of newly developed renewable energy, solar cells have the greatest potential. [0004] Due to the shortage of silicon materials in the world and the high cost of preparation, thin-film solar cells have attracted widespread attention and have become the research focus of scientific and technological workers. Thin-film solar cells are divided into silicon-based thin-film solar cells and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 高超沈鸿烈
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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