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Bilayer systems including a polydimethylglutarimide-based bottom layer and compositions thereof

A technology of dimethylglutarimide and system, which is applied in the photoplate making process of patterned surface, photosensitive materials, instruments, etc., and can solve the problems of increased manufacturing costs

Inactive Publication Date: 2014-03-26
GLOBALFOUNDRIES INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Plasma etch process to remove ARC after photoresist development increases overall manufacturing cost

Method used

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  • Bilayer systems including a polydimethylglutarimide-based bottom layer and compositions thereof
  • Bilayer systems including a polydimethylglutarimide-based bottom layer and compositions thereof
  • Bilayer systems including a polydimethylglutarimide-based bottom layer and compositions thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] In this example, the dissolution rate of PMGI films in 0.26N tetramethylammonium hydroxide (TMAH) developer was measured as a function of bake temperature using a quartz crystal microbalance. Films were cast from solutions of PMGI and cyclopentanone. PMGI (R=CH 3 ) was synthesized in house, exhibited a glass transition temperature of 185°C, and had a number average molecular weight of 13.4 kg / mol. figure 2 The dissolution rate (Angstroms / sec) as a function of baking temperature is illustrated. As shown, PMGI itself exhibits about 3400 Angstroms / sec ( / sec) in 0.26N TMAH, and, when the bake temperature after application was increased to 150°C / 60sec, PMGI itself exhibited about Dissolution rate in 0.26N TMAH per second.

Embodiment 2

[0052] In this example, the dissolution rate of various PMGI-containing films in 0.26N TMAH developer was determined using a quartz crystal microbalance. The PMGI films were cast from cyclopentanone and included the following cast films: a.) PMGI baked at 150°C for 60 seconds; b.) PMGI baked at 130°C for 60 seconds in a ratio of 100:5 and perfluorooctane sulfonate bis-tert-butylphenyl iodide Salt PAG (IPFOS); c.) a 100:20:1 ratio of PMGI, BAD (2,5-dimethylhexan-2,5-yl-bis-adamantane -1-Carboxylate) and IPFOS; and d.) PMGI and Sudan Orange in a ratio of 100:5 baked at 150°C for 60 seconds. image 3 These results are illustrated and, moreover, show the significant effect of the acid-sensitive dissolution inhibitor (BAD) on the dissolution rate relative to other PGMI membranes without dissolution inhibitor. In addition, when comparing the dissolution rate of the PMGI cast film with the PMGI+IPFOS film, it was shown that the dissolution rate decreased when the photoacid generat...

Embodiment 3

[0054] In this example, the dissolution kinetics of exposed and unexposed PMGI films were determined. Monolayer PMGI films (100:20:1 ratio of PMGI, IPFOS, BAD baked at 130°C for 60 s) were cast and exposed to 254 nm UV radiation for 60 s or 100 s. In addition, a two-layer system was formed comprising: a top layer of silicon-containing photoresist (SCR858 from Shin-Etsu Chemical Company, Japan) optimized for 193 nm exposure, deposited at a thickness of 85 nm; and a PMGI film (at 130 A bottom layer of PMGI, IPFOS, BAD) in a ratio of 100:20:1 was baked at °C for 60 seconds. The optical density of the monolayer PMGI film at 193 nm is 3.0 / μm.

[0055] Such as Figure 4 As shown in , a significant increase in the dissolution rate was observed when the monolayer PGMI film was exposed to UV radiation ( / sec vs. / Second). Furthermore, after dissolving the top silicon-containing resist layer very quickly, the PMGI film exposed through the 193 nm silicon-containing resist dissolve...

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Abstract

Bilayer systems include a bottom layer formed of polydimethylglutarimide, an acid labile dissolution inhibitor and a photoacid generator. The bilayer system can be exposed and developed in a single exposure and development process.

Description

Background technique [0001] The present invention relates to a bilayer system using a polydimethylglutarimide composition and an imaging method thereof. [0002] Since EUV lithography (EUV lithography) is not yet ready for implementation and high-index immersion lithography (immersion lithography) has not proven to be a viable alternative, therefore, the solution to the problem by combining water immersion lithography with double exposure (DE) or double patterning (DP) method combinations to extend photolithography (photolithography) to less than 50 nanometers (nm) feature (feature) has been seriously considered. However, DE and DP methods are costly and reduce wafer yield. Furthermore, anti-reflective coatings (ARC) are used in these methods and play a very important role in photolithography at these dimensions. Typically, the ARC is cross-linked to prevent interfacial mixing when a photoresist layer is coated thereon, and then the ARC must be removed by plasma etching afte...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08G63/00
CPCG03F7/091G03F7/095G03F7/0392C08G63/00C08L35/00G03C1/733
Inventor 伊藤洋张桃华郑雅如金昊彻
Owner GLOBALFOUNDRIES INC
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