Laser matrix crystal of lead chlorofluoride doped with rare earth ions and preparation method thereof

A rare earth ion and lead fluoride technology, applied in the field of optoelectronic materials, can solve problems such as unfavorable rare earth ions, weak crystal field strength, etc., and achieve the effects of good application prospect, high controllability and simple process flow

Active Publication Date: 2012-07-25
上海德硅凯氟光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, the high symmetry and weak crystal field strength of cubic fluoride crystals are not conducive to the formation of large Stark energy level splitting by rare earth ions.

Method used

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  • Laser matrix crystal of lead chlorofluoride doped with rare earth ions and preparation method thereof
  • Laser matrix crystal of lead chlorofluoride doped with rare earth ions and preparation method thereof
  • Laser matrix crystal of lead chlorofluoride doped with rare earth ions and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Example 1: 0.5mol%Yb 3+ :PbClF crystal

[0038] According to the chemical formula ratio, weigh high-purity (5N) raw materials: YbF 3 , PbF 2 , PbCl 2 A total of 180g was mixed thoroughly. where PbCl 2 Excessive 1mol%; put the mixed raw materials into a quartz glass crucible in a vacuum glove box, and seal it under vacuum conditions. The sealed raw materials are calcined in a muffle furnace at 400 ° C for 10 hours, and the solid phase reaction obtains fluorine chloride Lead polycrystalline raw material; melt the raw material at 630°C, and start to grow down after constant temperature for 2 hours. The crucible’s descending speed is 20mm / day, and the temperature is lowered after the growth is completed (the cooling rate is 50°C / hour). After the cooling is completed, a transparent single crystal is obtained. The crystal growth period is about 4 days.

Embodiment 2

[0039] Example 2: 1.0mol%Yb 3+ :PbClF crystal

[0040] According to the chemical formula ratio, weigh high-purity (5N) raw materials: YbF 3 , PbF 2 , PbCl 2 A total of 160g was mixed thoroughly. Repeat the method of embodiment 1, make 1.0mol%Yb 3+ : Transparent single crystal of PbClF, the crystal growth period is about 3 days.

Embodiment 3

[0041] Example 3: 2.0mol%Yb 3+ :PbClF crystal

[0042] According to the chemical formula ratio, weigh high-purity (5N) raw materials: YbF 3 , PbF 2 , PbCl 2 A total of 200g was mixed thoroughly. Repeat the method of embodiment 1, make 2.0mol%Yb 3+ : Transparent single crystal of PbClF, the crystal growth period is about 5 days.

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Abstract

The invention relates to a laser matrix crystal of lead chlorofluoride doped with a rare earth ion and a preparation method thereof. The chemical formula of the laser matrix crystal is RE3<+>:PbClF, wherein the rare earth ion RE3<+> is selected from at least one of Yb3<+>, Nd3<+>, Tm3<+>, Ho3<+>, Pr3<+>, Ce3<+> and Er3<+>. The invention provides the chlorofluoride laser crystal doped with the rare earth, which has the advantages of disorder negative ion coordination and low symmetry.

Description

technical field [0001] The invention belongs to the field of optoelectronic materials and relates to a novel laser host crystal, in particular to a rare earth ion-doped lead fluoride laser host crystal and a preparation method thereof. Background technique [0002] After more than 40 years of development of laser technology, the trend of short pulse and ultrashort pulse is at the forefront. Femtosecond laser has four characteristics of ultra-short pulse, high repetition rate, high peak power and wide spectrum, which promotes the progress of information science and the research of physics, chemistry, biology and material science to a deeper level, and is widely used in scientific research and various fields of industrial technology ( U. Keller, Nature, 2003, 424: 831. ). [0003] The Ti:Sapphire femtosecond laser developed in the 1990s is currently the ultrafast laser device with the shortest pulse and the most used (for example, see US5,377043). However, the 532nm pump so...

Claims

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Application Information

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IPC IPC(8): C30B29/12C30B11/00
Inventor 王庆国徐军苏良碧郑丽和李红军徐晓东
Owner 上海德硅凯氟光电科技有限公司
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