Deglue method for high aspect ratio structures

A high-to-width ratio, degumming technology, used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of groove morphology, uncontrollable process factors, production cost and uneconomical efficiency, etc. Improves contact performance, avoids degumming residues, and improves degumming effect

Active Publication Date: 2017-11-07
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, the U.S. Patent No. US6329293 proposes a method of using hydrogen fluoride gas to remove polymers at the bottom of deep trenches at normal temperature and pressure, but this method needs to add a process step after degumming, and the directional input of the gas requires a specific In addition, it will have a certain impact on the groove morphology, which is not economical in terms of production cost and efficiency, and there are uncontrollable factors in the process

Method used

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  • Deglue method for high aspect ratio structures
  • Deglue method for high aspect ratio structures
  • Deglue method for high aspect ratio structures

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Embodiment 1

[0038] This embodiment is a deglue method for a DD structure using a conventional CMOS process, and the DD structure is a dual damascene structure including via holes and trenches. Figure 2A-2C It is a schematic cross-sectional structure diagram of the device corresponding to each step in the glue removal method of this embodiment.

[0039] First, if Figure 2A As shown, a substrate 100 is provided, and an etching stop layer 110, a first dielectric layer 120, an intermediate stop layer 130, a second dielectric layer 140, and an antireflection layer 150 are sequentially formed on the substrate 100; After the accumulation is completed, it can be formed as Figure 2A The five-layer structure shown.

[0040] Wherein, the substrate 100 can be such as silicon dioxide (SiO 2 ) dielectric layer, or a substrate with previous process graphics. The material of the etch stop layer 110 can be silicon nitride (Si 3 N 4 ), carbon-doped silicon nitride (NDC), etc., the thickness of the...

Embodiment 2

[0052] The present embodiment is a method for removing glue after etching pads in a specific pattern, and the specific pattern includes etched pads and grooves with different line widths filled with photoresist. Figure 3A-3C It is a schematic cross-sectional structure diagram of the device corresponding to each step in the glue removal method of this embodiment.

[0053] Such as Figure 3A In the device structure shown, 200 is the pressure point pattern after etching, 210 is the remaining photoresist, 220, 230, and 240 are dielectric layer grooves with different line widths, and the line widths are 1.5 μm and 3 μm respectively. , 6 μm, since the dielectric layer groove does not need to be etched and is filled with photoresist, its filling depth is 4-6 μm, preferably 5 μm here, and the remaining photoresist on the surface of the dielectric layer groove after the etching is completed The thickness is 2 μm. Therefore, the total thickness of the photoresist used for trench filli...

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Abstract

The invention provides a photoresist removing method of a structure with a large height-width ratio. The photoresist removing method comprises the following steps of: firstly executing a pre-cleaning process before a photoresist removing process, and doping a quantity of halogen-containing gas during the photoresist removing process in a timing manner to improve a photoresist removing effect, thereby effectively avoiding residues after photoresist removal, improving the flatness at the bottom of the structure with the large height-width ratio and being favorable for improving the electrical contact performance; and further alternately performing halogen-containing gas photoresist removal and pure oxygen photoresist removal so as to prevent the consolidation of a photoresist and simultaneously avoid injuring the surface without the photoresist. According to the photoresist removing method provided by the invention, the complex process flow is not increased, and effective photoresist removal can be realized by only increasing the pre-cleaning process and performing local adjustment on the photoresist removing process, thus the production cost can be saved.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a glue removal method for a structure with a large aspect ratio. Background technique [0002] As the functions of semiconductor devices become more and more complex, their structures become more and more diverse. Among them, the aspect ratio has become one of the important parameters of the device structure. In new semiconductor devices, there are many structures with large aspect ratios, such as high aspect ratio contact holes (HARC), self-aligned contact holes (SAC), etc. ; In addition, the through-silicon via (TSV) in the field of interconnection is also a typical high aspect ratio structure. Due to the large aspect ratio of this type of structure, the residues at the bottom of this type of structure are not easy to remove during the process. In particular, in some processes, the high aspect ratio structure is filled with substances such as photoresi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02G03F7/42
Inventor 王伟军李铭曾绍海
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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