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Preparation method of ZnO-based scintillating thick film

A thick film and powder technology, applied in the field of preparation of inorganic scintillation materials, can solve the problems of high mismatch between sapphire substrate and ZnO, poor crystalline quality of thick film, etc., and achieves a small volume, convenient preparation and low growth cost. Effect

Inactive Publication Date: 2012-08-08
EAST CHINA NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the mismatch between the sapphire substrate and ZnO is high, and the preparation process of the Gwangju Institute of Science and Technology in South Korea is relatively simple, so the crystalline quality of the directly grown thick film is poor

Method used

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  • Preparation method of ZnO-based scintillating thick film
  • Preparation method of ZnO-based scintillating thick film
  • Preparation method of ZnO-based scintillating thick film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030]By adopting the technical scheme of the present invention, a 3mm thick 6H-sapphire single crystal is used as a substrate material to prepare a high crystal quality ZnO:In scintillation thick film. The whole process is divided into three steps:

[0031] 1. Target production

[0032] Use the preparation method of the ZnO-based ceramic target material in the content of the present invention above to prepare ZnO:In target material, In mixed powder 2 o 3 The doping concentration was 0.35wt%, the sintering temperature was 1300°C, and the time was 12 hours. After the sintering was completed, it was polished according to the normal process, washed with alcohol and pure water three times, and placed in a magnetically bound inductively coupled physical sputtering apparatus for pre-sputtering to form sputtering tracks.

[0033] 2. thin film deposition

[0034] A 3mm 6H-sapphire single wafer with good crystal quality is selected as the substrate material, and both sides are req...

Embodiment 2

[0040] By adopting the technical scheme of the present invention, a 0.4mm thick 6H-sapphire single crystal is used as a substrate material to prepare a high crystal quality ZnO:Ga scintillation thick film. The whole process is divided into three steps:

[0041] 1. Target production

[0042] Use the preparation method of the ZnO-based ceramic target material in the content of the present invention to prepare ZnO:Ga target material, Ga in the mixed powder 2 o 3 The doping concentration was 0.15wt%, the temperature was 950°C, and the time was 8 hours. After the sintering was completed, it was polished according to the normal process, washed with alcohol and pure water three times, and placed in a magnetically bound inductively coupled physical sputtering apparatus for pre-sputtering to form sputtering tracks.

[0043] 2. thin film deposition

[0044] A 0.4mm 6H-sapphire single wafer with good crystal quality is selected as the substrate material, and both sides are required ...

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Abstract

The invention discloses a preparation method of a ZnO-based scintillating thick film. The preparation method includes the three steps of: first, preparing ZnO-based ceramic target material; then, adopting a sapphire (side R) on which a ZnO monocrystal thick film grows as a substrate, and depositing a ZnO-based thick film on the substrate through a magnetically confined inductance coupling physical sputtering method; and finally, carrying out high-temperature rapid annealing treatment and low-temperature annealing treatment in a hydrogen-containing atmosphere. The thick film deposition employs an in situ annealing-regrowth two-step method. The ZnO-based scintillating thick film prepared by the method of the invention has good crystallization quality, and can realize ultrafast attenuation and luminescence under X-ray radiation, as well as has high light yield. Compared with ZnO scintillating power, ceramics and crystal materials, the ZnO-based scintillating thick film prepared by the method of the invention has the characteristics of convenient preparation, low growth cost, small volume and high utilization rate, controllable size of surface area, and easy integration, etc.

Description

technical field [0001] The invention relates to the technical field of preparation of inorganic scintillation materials, in particular to a preparation method of a high crystal quality ZnO-based scintillation thick film with ultrafast light attenuation. Background technique [0002] Scintillation is a special case of stimulated emission luminescence. The scintillation material excites atoms or molecules after absorbing high-energy rays or particles, and then quickly returns the excited energy level to the ground state by emitting visible or ultraviolet light. As the core component of energy beam detectors, scintillation materials are rapidly growing into a high-tech industry with great potential, and are widely used in high-energy physics, radiology, industrial non-destructive flaw detection, geological exploration, safety inspection, explosion-proof detection and other fields. The study of scintillation materials and scintillation properties has been carried out for nearly ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/54
Inventor 李铮铮严成锋马学鸣
Owner EAST CHINA NORMAL UNIV
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