Nano grating mask preparation method for surface plasma photoetching

Abstract

The invention provides a nano grating mask preparation method for surface plasma photoetching, which comprises the steps that: a grating array structure is prepared on a substrate; shadow evaporation of masking layer, RIE (Reactive Ion Etching) of substrate and removal of masking layer are carried out in the direction of one side of a grating line, and shadow evaporation of masking layer, RIE (Reactive Ion Etching) of substrate and removal of masking layer are carried out in the direction of the other side of the grating line; isotropic etching is carried out using RIE, or the grating line issubjected to isotropic wet etching through etchant, and the depth of RIE or wet etching is controlled to reduce the width of the grating line to a preset value; and shadow evaporation of masking layer, RIE (Reactive Ion Etching) of substrate and removal of masking layer are carried out in the direction of one side of the width-reduced fiber grating, and then shadow evaporation of masking layer, RIE (Reactive Ion Etching) of substrate and removal of masking layer are carried out in the direction of the other side of the width-reduced fiber grating. The lines obtained according to the method disclosed by the invention is four times as much as the lines of the previous grating, and grating period is reduced to one fourth of the previous grating period.

Description

technical field [0001] The invention relates to the technical field of preparation of nanometer grating masks, in particular to a preparation method of nanometer grating masks for surface plasmon lithography, which can reduce the period and line width of nanoscale grating arrays. Background technique [0002] Grating arrays, especially grating arrays with periods and linewidths on the order of ten nanometers, have great application value in the fields of super-resolution lithography, super-resolution imaging, new composite materials, microelectronics, and biological detection. There are three types of existing methods for fabricating small-period grating arrays: photolithography, direct writing, and frequency doubling. The main methods of lithography include optical exposure, electron beam exposure, X-ray exposure, etc. Due to the diffraction effect of light and electron scattering problems in electron beam exposure, it is difficult to prepare gratings with a period below 60...

AI Technical Summary

Problems solved by technology

The main methods of lithography include optical exposure, electron beam exposure, X-ray exposure, etc. Due to the diffraction effect of light and electron scattering problems in electron beam exposure, it is difficult to prepare gratings with a period below 60nm; X-ray exposure is due to the small It is very difficult to prepare a mask with a large line width, and it is not suitable for the preparation of gratings with a period below 60nm

The direct writing methods mainly include laser direct writing, electron beam direct writing, and focused particle beam direct writing. The minimum period of the grating that can be prepared by laser direct writing is generally not less than 100nm, and the minimum period that can be prepared by electron beam direct writing and focused particle beam direct writing is Gratings of tens of nanometers, but the processing efficiency is low, it is difficult to prepare a large area, and the price is expensive

Images