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Nano grating mask preparation method for surface plasma photoetching

A technology of surface plasmon and nano-grating, which is applied in the photoplate-making process of patterned surface, optical mechanical equipment, optics, etc., can solve the problems of difficult preparation of grating, difficult preparation, high price, etc., and achieve the effect of reducing costs

Active Publication Date: 2012-08-08
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The main methods of lithography include optical exposure, electron beam exposure, X-ray exposure, etc. Due to the diffraction effect of light and electron scattering problems in electron beam exposure, it is difficult to prepare gratings with a period below 60nm; X-ray exposure is due to the small It is very difficult to prepare a mask with a large line width, and it is not suitable for the preparation of gratings with a period below 60nm
The direct writing methods mainly include laser direct writing, electron beam direct writing, and focused particle beam direct writing. The minimum period of the grating that can be prepared by laser direct writing is generally not less than 100nm, and the minimum period that can be prepared by electron beam direct writing and focused particle beam direct writing is Gratings of tens of nanometers, but the processing efficiency is low, it is difficult to prepare a large area, and the price is expensive

Method used

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  • Nano grating mask preparation method for surface plasma photoetching
  • Nano grating mask preparation method for surface plasma photoetching
  • Nano grating mask preparation method for surface plasma photoetching

Examples

Experimental program
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Embodiment 1

[0036] Embodiment 1, using a photoresist grating with a period of 200nm to fabricate a silicon grating array with a period of 50nm, the fabrication process is as follows:

[0037] (1) Plating 50nm silicon on a quartz substrate, such as figure 1 As shown, then a grating array with a period of 200nm and a photoresist line width of 120nm is prepared on the substrate by an interference lithography method with a light source of 365nm laser, as figure 2 shown;

[0038] (2) Towards the right side of the grating lines, shadow evaporated chromium is used as a masking layer, and a narrow slit with a width of 30nm without a chromium masking film layer is obtained on the right side of each grating line, as image 3 shown;

[0039] (3) Use SF 6 The gas performs anisotropic RIE method to etch a 50nm silicon film layer, and it will stop when it reaches the quartz material, such as Figure 4 shown;

[0040] (4) Remove the chromium masking layer to obtain a group of narrow slit lines tha...

Embodiment 2

[0044] Embodiment 2, a germanium grating array with a period of 40nm is produced with a photoresist grating with a period of 160nm, and the production process is as follows:

[0045] (1) Plating 40nm germanium on a glass substrate, then using a 257nm laser as a light source to carry out interference lithography, and preparing a photoresist grating array with a period of 160nm and a photoresist line width of 100nm on the substrate;

[0046] (2) Carry out shadow vapor deposition of copper as a masking layer to one side of the grating lines, and obtain a narrow slit with a width of 20nm without a copper masking film layer on the side of each grating line;

[0047] (3) Carry out the anisotropic RIE method to etch through the germanium film layer, and stop automatically when the glass material is etched;

[0048] (4) removing the copper masking layer to obtain a group of narrow slit lines that are etched and transferred to the germanium substrate;

[0049](5) Then perform shadow v...

Embodiment 3

[0052] Example 3, an aluminum grating array with a period of 30nm is produced with an imprinted rubber grating with a period of 120nm, and the production process is as follows:

[0053] (1) Plating 30nm of aluminum on a flat copper substrate, and then preparing a grating array with a period of 120nm and an embossing glue line width of 75nm on the substrate by a nanoimprint method;

[0054] (2) Towards the right side of the grating lines, shadow evaporated silver is used as a masking layer, and a narrow slit with a width of 15nm without silver masking film layer is obtained on the right side of each grating line;

[0055] (3) Carry out anisotropic RIE method to etch the aluminum film layer of 30nm;

[0056] (4) remove the silver masking layer to obtain a group of slit lines that are etched and transferred to the aluminum film layer;

[0057] (5) Then shadow evaporate the silver masking layer, RIE etching, and remove the silver masking layer to the other side of the grating lin...

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Abstract

The invention provides a nano grating mask preparation method for surface plasma photoetching, which comprises the steps that: a grating array structure is prepared on a substrate; shadow evaporation of masking layer, RIE (Reactive Ion Etching) of substrate and removal of masking layer are carried out in the direction of one side of a grating line, and shadow evaporation of masking layer, RIE (Reactive Ion Etching) of substrate and removal of masking layer are carried out in the direction of the other side of the grating line; isotropic etching is carried out using RIE, or the grating line issubjected to isotropic wet etching through etchant, and the depth of RIE or wet etching is controlled to reduce the width of the grating line to a preset value; and shadow evaporation of masking layer, RIE (Reactive Ion Etching) of substrate and removal of masking layer are carried out in the direction of one side of the width-reduced fiber grating, and then shadow evaporation of masking layer, RIE (Reactive Ion Etching) of substrate and removal of masking layer are carried out in the direction of the other side of the width-reduced fiber grating. The lines obtained according to the method disclosed by the invention is four times as much as the lines of the previous grating, and grating period is reduced to one fourth of the previous grating period.

Description

technical field [0001] The invention relates to the technical field of preparation of nanometer grating masks, in particular to a preparation method of nanometer grating masks for surface plasmon lithography, which can reduce the period and line width of nanoscale grating arrays. Background technique [0002] Grating arrays, especially grating arrays with periods and linewidths on the order of ten nanometers, have great application value in the fields of super-resolution lithography, super-resolution imaging, new composite materials, microelectronics, and biological detection. There are three types of existing methods for fabricating small-period grating arrays: photolithography, direct writing, and frequency doubling. The main methods of lithography include optical exposure, electron beam exposure, X-ray exposure, etc. Due to the diffraction effect of light and electron scattering problems in electron beam exposure, it is difficult to prepare gratings with a period below 60...

Claims

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Application Information

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IPC IPC(8): G03F7/00
Inventor 罗先刚赵泽宇冯沁刘凯鹏王长涛高平杨磊磊刘玲
Owner INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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