Transfer preparation method of patterned graphene

Abstract

The invention discloses a transfer preparation method of patterned graphene, which comprises the following steps: coating an adhesive material on a graphene surface, which grows on a catalytic metallic substrate, according to a designed pattern; coating a PDMS (polydimethylsiloxane) layer on the graphene surface, and thermosetting; soaking the obtained sample in an etching solution to remove the catalytic metallic substrate, so that the graphene with the adhesive material and the PDMS floats in the solution; transferring the graphene with the adhesive material and the PDMS onto a target substrate; and stripping the PDMS from the target substrate to obtain the patterned graphene. The method disclosed by the invention does not limit the use of materials of the target substrate; when stripping the PDMS, an expected pattern can be obtained without causing additional structure damage on the graphene, and meanwhile, the graphene surface is kept clean; and the invention can be used for preparing patterned graphene without expensive etching equipment.

Description

technical field [0001] The invention belongs to the field of nanometer materials and microelectronic devices, and in particular relates to a transfer preparation method of patterned graphene. Background technique [0002] Graphene is an emerging two-dimensional nanomaterial in recent years. Due to its excellent mechanical properties, light transmittance, thermal conductivity, and electrical conductivity, it can be used as a transparent electrode material in the fields of solar cells and touch panels in industry. , At the same time, it can also replace the current copper wire as the wire material of the integrated circuit. The preparation of graphene by chemical vapor deposition (CVD) on catalytic metal substrates (such as copper, nickel, etc.) is currently the main production method suitable for large-scale industrial applications. The graphene produced by this method must adopt a certain process Only by transferring graphene to the target substrate and making it into a spe...

AI Technical Summary

Problems solved by technology

In the process of transferring graphene from the metal growth substrate to the target substrate, wet or dry transfer can be used. The wet transfer mainly uses the spin coating method to deposit PMMA or other colloidal films on the surface of graphene, and then uses chemical reagents to corrode. Metal substrate, to separate the graphene from the metal substrate, transfer the graphene to a new target substrate, and then use an organic solvent such as acetone or chloroform to dissolve the colloidal film to obtain a graphene sample, such as the surface of the target transfer substrate When other organic materials are attached, or the target substrate itself is easily damaged by organic solvents, the application of this method is limited; dry transfer mainly uses PDMS (polydimethylsiloxane) or other thermal decomposition tapes to directly press Printed on the surface of graphene as a dielectric material to protect graphene, and then use chemical reagents to separate graphene from the metal substrate, transfer graphene to a new target substrate, and then use mechanical methods to remove the PDMS protective film to obtain The final graphene sample, but this method is prone to cracking of the graphene sample

When graphene is patterned by ion beam etching, electron beam etching or laser beam etching, colloid is usually spin-coated on the surface of graphene as a mask. After etching, the colloid needs to be washed off with an organic solvent. , there is also solvent damage to the substrate, and the use of ion beams, electron beams or laser beams, such high-energy particles or beams, can damage organic material substrates, which are only suitable for inorganic material substrates such as silicon wafers and quartz.

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