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Integrated passive device, MIM (metal injection molding) capacitor, polar plate and forming method of polar plate

A technology for integrating passive devices and plates, which is applied in the manufacture of electric solid devices, semiconductor devices, semiconductor/solid devices, etc., can solve problems such as uneven plates, failure of integrated passive devices, etc., and avoid uneven thickness Effect

Inactive Publication Date: 2012-08-15
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The problem solved by the present invention is to propose a new pole plate of MIM capacitor and its forming method, as well as the MIM capacitor and integrated passive device including the pole plate, so as to solve the unevenness of the pole plate formed by the existing manufacturing method, and Lead to the failure of capacitors and integrated passive devices containing the plate

Method used

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  • Integrated passive device, MIM (metal injection molding) capacitor, polar plate and forming method of polar plate
  • Integrated passive device, MIM (metal injection molding) capacitor, polar plate and forming method of polar plate
  • Integrated passive device, MIM (metal injection molding) capacitor, polar plate and forming method of polar plate

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Embodiment 1

[0050] In the first embodiment, a second metal layer is formed in the first metal layer as an example, and the following combination figure 2 The flowchart in and image 3 The schematic diagram of the cross-sectional structure in , introduces the manufacturing method and structure of the plate of the MIM capacitor in detail.

[0051] First, step S11 is performed to deposit a first diffusion barrier layer 2110; in this step, the first diffusion barrier layer 2110 is formed on an insulating material, such as silicon dioxide or silicon nitride.

[0052]The purpose of the first diffusion barrier layer 2110 is to prevent the metal in the first metal layer 2111 , especially copper, from diffusing into the dielectric layer. The material of the first diffusion barrier layer 2110 can be selected from existing materials that can realize this function, such as titanium nitride. In addition, in order to enhance the bonding between the titanium nitride and the first metal layer 2111 , a...

Embodiment 2

[0071] The difference between the second embodiment and the first embodiment is that the electrode plate 211' formed in the second embodiment needs to be thicker, such as greater than 1 micron. Therefore, in view of the above situation, a multi-layer second metal layer 2112 is formed in the second embodiment .

[0072] Specifically, refer to Figure 7 As shown, steps S11, S12, and S13 in Embodiment 1 are first performed, and then step S14' is performed, and the second metal layer and the first metal layer are sequentially deposited multiple times on the first metal layer 2113 of the second thickness. layer, the sum of the partial thickness, the second thickness, and the thicknesses of multiple depositions forms the total thickness of the first metal layer. Taking two depositions as an example, Figure 8 Alternating second metal layers 2115 , first metal layers 2116 , second metal layers 2117 , first metal layers 2118 are shown in FIG.

[0073] In the specific implementation...

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Abstract

The invention relates to a polar plate of an MIM (metal injection molding) capacitor, comprising a first diffusion preventing layer and a first metal layer formed on the first diffusion preventing layer, wherein the first metal layer is internally provided with a second metal layer which is parallel to the first diffusion preventing layer, and a material of the second metal layer is different from that of the first metal layer. Besides, the invention also provides a forming method of the polar plate, as well as the MIM capacitor comprising the polar plate, and an integrated passive device comprising the capacitor. By adopting the technical scheme of the invention, the problems that the polar plate formed by using the conventional manufacturing method is uneven so that the capacitor comprising the polar plate, and the integrated passive device are invalid can be solved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an integrated passive device, a MIM capacitor therein, a pole plate in the capacitor and a method for forming the pole plate. Background technique [0002] Prior art radio frequency (RF) circuits use a large number of passive components, such as inductors. The miniaturization of passive components and passive component circuits is an important goal of RF device technology. [0003] Recent advances in passive device technology have resulted in Integrated Passive Devices (IPDs), in which inductors, capacitors, and resistors are integrated on a single compact substrate. In these IPDs, one of the goals usually to be achieved in the design of the inductive component is a high quality factor Q, that is, the loss of the input signal is small. [0004] figure 1 It is a structural schematic diagram of an existing integrated passive device (Integrated Passive Device). The int...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/485H01L23/64H01L27/01H01L21/48
Inventor 林益梅赵波
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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