Flip chip double-faced three-dimensional circuit manufacture method by encapsulation prior to etching and flip chip double-faced three-dimensional circuit encapsulation structure

Abstract

The present invention involves a double -sided three -dimensional line chip inverted and eroded and then sealing the manufacturing method and its packaging structure. The method includes the following steps: take the metal substrate;Remove part of the optical resistance film; electroplating inert metal line layer; electroplating metal line layer; removing photore resistance membrane; packaging; plastic seal surface opening; digging grooves; electroplating conductive metal; metalization before processing; electroplating metal line layer; chemistry; chemistry; chemistry; chemistry; chemistry; chemistry; chemistry; chemistry; chemistry; chemistry;Etquette; electroplated metal line layer; coating and bonding material; loading; metal wire key; cleaning; ball planting and cutting finished products.The beneficial effect of the present invention is to reduce the cost of manufacturing, improve the safety and reliability of the packaging body, reduce environmental pollution, and can truly achieve the design and manufacturing of high -density lines.

Description

technical field [0001] The invention relates to a double-sided three-dimensional circuit chip flip chip manufacturing method and its packaging structure. It belongs to the technical field of semiconductor packaging. Background technique [0002] The manufacturing process flow of the traditional high-density substrate package structure is as follows: [0003] Step 1, see Figure 81 , take a substrate made of glass fiber material, [0004] Step two, see Figure 82 , opening holes at desired locations on the fiberglass substrate, [0005] Step three, see Figure 83 , coated with a layer of copper foil on the back of the glass fiber substrate, [0006] Step 4, see Figure 84 , fill the conductive material in the position where the glass fiber substrate is punched, [0007] Step five, see Figure 85 , coated with a layer of copper foil on the front of the glass fiber substrate, [0008] Step six, see Figure 86 , coated with a photoresist film on the surface of the glas...

AI Technical Summary

Problems solved by technology

[0019] 3. Glass fiber itself is a kind of foaming material, so it is easy to absorb moisture and moisture due to the storage time and environment, which directly affects the safety capability or reliability level of reliability;

[0020] 4. The surface of the glass fiber is covered with a copper foil metal layer thickness of about 50-100 μm, and the etching distance between the metal layer line and the line can only achieve an etching gap of 50-100 μm due to the characteristics of the etching factor (etching factor: minimum The best manufacturing capability is that the etching gap is approximately equal to the thickness of the object being etched, see Figure 93 ), so it is impossible to truly design and manufacture high-density circuits;

[0022]6. Also because the entire substrate material is made of glass fiber, the thickness of the glass fiber layer is obviously increased by 100~150μm, and it cannot be really ultra-thin encapsulation;

[0023]7. Due to the large difference in material characteristics (expansion coefficient) of the traditional glass fiber plus copper foil technology, it is easy to cause stress deformation in the harsh environment process, directly Affects the accuracy of component loading and the adhesion and reliability of components and substrates

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