Preparation method of zinc oxide/ cuprous oxide heterojunction

A cuprous oxide, heterojunction technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, electrolytic inorganic material coating, etc., can solve problems such as complex process and achieve the effect of simple method

Inactive Publication Date: 2012-10-17
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to overcome the shortcomings of the existing zinc oxide/cuprous oxide nano-heterojunction photocatalyti...

Method used

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  • Preparation method of zinc oxide/ cuprous oxide heterojunction
  • Preparation method of zinc oxide/ cuprous oxide heterojunction
  • Preparation method of zinc oxide/ cuprous oxide heterojunction

Examples

Experimental program
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Effect test

Embodiment 1

[0022] Example 1, the flexible ITO substrate was ultrasonically cleaned for 20 minutes with distilled water, absolute ethanol, acetone, and absolute ethanol in sequence, then rinsed several times with deionized water, and dried for later use. Weigh 0.0744g of Zn(NO 3 ) 2 ·6H 2 O and 0.0351g of hexamethylenetetramine were dissolved in an appropriate amount of deionized water to form a solution with a concentration of 0.002M, and then stirred on a magnetic stirrer for 20 minutes to obtain a uniform electrolyte. Electrochemical deposition was carried out on E-corder401 electrochemical workstation, using a standard three-electrode system, the flexible ITO substrate was used as the working electrode, the platinum sheet was used as the counter electrode, and the reference electrode was Ag / AgCl. The deposition temperature was controlled at 40°C and the transverse potential was -1.3V. After 0.5h, a pencil-like ZnO nanorod array was obtained, rinsed with deionized water, and then dri...

Embodiment 2

[0024] Example 2, the flexible ITO substrate was ultrasonically cleaned for 25 minutes with distilled water, absolute ethanol, acetone, and absolute ethanol in sequence, then rinsed several times with deionized water, and dried for later use. Weigh 0.1488g of Zn(NO 3 ) 2 ·6H 2 O and 0.0702g of hexamethylenetetramine were dissolved in an appropriate amount of deionized water to form a solution with a concentration of 0.005M, and then stirred on a magnetic stirrer for 25 minutes to obtain a uniform electrolyte. Electrochemical deposition was carried out on E-corder401 electrochemical workstation, using a standard three-electrode system, the flexible ITO substrate was used as the working electrode, the platinum sheet was used as the counter electrode, and the reference electrode was Ag / AgCl. The deposition temperature was controlled at 50°C and the transverse potential was -1.4V. After 1h, pencil-like ZnO nanorod arrays were obtained, rinsed with deionized water, and then dried...

Embodiment 3

[0026] Example 3, the flexible ITO substrate was ultrasonically cleaned for 35 minutes with distilled water, absolute ethanol, acetone, and absolute ethanol in sequence, then rinsed several times with deionized water, and dried for later use. Weigh 0.2232g of Zn(NO 3 ) 2 ·6H 2 O and 0.1053g of hexamethylenetetramine were dissolved in an appropriate amount of deionized water to form a solution with a concentration of 0.008M, and then stirred on a magnetic stirrer for 35 minutes to obtain a uniform electrolyte. Electrochemical deposition was carried out on E-corder401 electrochemical workstation, using a standard three-electrode system, the flexible ITO substrate was used as the working electrode, the platinum sheet was used as the counter electrode, and the reference electrode was Ag / AgCl. The deposition temperature was controlled at 60°C and the transverse potential was -1.5V. After 1.5h, a pencil-like ZnO nanorod array was obtained, rinsed with deionized water, and then dri...

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Abstract

The invention discloses a preparation method of zinc oxide/ cuprous oxide heterojunction, aiming at solving the technical problem that the existing preparation method of zinc oxide/ cuprous oxide nano-heterojunction photocatalytic material is complicated in technology. The preparation method adopts the technical scheme comprising the steps of: carrying out ultrasonic cleaning on a flexible indium tin oxide (ITO) substrate; weighing Zn (NO3)2. 6H2O and hexamethylene tetramine; dissolving the weighed Zn (NO3)2. 6H2O and hexamethylene tetramine into deionized water to prepare electrolyte; carrying out electrochemical deposition on an electrochemical working station, wherein the flexible ITO substrate is a working electrode, and a platinum sheet is a counter electrode; controlling the deposition temperature to be 40-70 DEG C and the cross potential to be -1.3 to -1.6V to obtain a ZnO nanorod array; washing and drying; adopting CuSO4 and citric acid to prepare electrolyte; carrying out electrochemical deposition on the electrochemical working station, wherein the flexible ITO substrate is the working electrode, and the platinum sheet is the counter electrode; controlling the deposition temperature to be 40-70 DEG C and the cross potential to be -0.5 to -0.6V; and depositing Cu2O on a ZnO nanorod to obtain the ZnO/ Cu2O heterojunction. The zinc oxide/ cuprous oxide heterojunction is prepared by an electrochemical deposition method under the conditions of the flexible ITO substrate and the low temperature, so that the method is simple.

Description

technical field [0001] The invention relates to a preparation method of a heterojunction, in particular to a preparation method of a zinc oxide / cuprous oxide heterojunction. Background technique [0002] Based on the rapid development of solar cells, it is urgent to adopt a simple and economical preparation technology to expand the application of solar cells. [0003] The document "Chinese Patent Publication No. CN101708471B" discloses a zinc oxide / cuprous oxide nano-heterojunction photocatalytic material and its preparation method. The literature uses the method of magnetron sputtering to prepare ZnO / Cu on silicon substrates 2 O heterojunction, the process is relatively complicated, and the specific steps are: 1. Preparation of the substrate; 2. Vacuumizing the sputtering film forming chamber; 3. Setting various parameters of the magnetron sputtering device to deposit Cu2O thin film layer; 4. After shutting down for 30 minutes, the Cu2O film was obtained; 5. Put the silic...

Claims

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Application Information

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IPC IPC(8): C25D9/04H01L31/18H01L31/0336
CPCY02P70/50
Inventor 樊慧庆李强翟玉纯
Owner NORTHWESTERN POLYTECHNICAL UNIV
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