Insulated gate bipolar translator (IGBT) with terminal deep energy level impurity layer

Abstract

The invention discloses an insulated gate bipolar translator (IGBT) with a terminal deep energy level impurity layer, and belongs to the technical field of semiconductor power devices. Based on the conventional Planar field stop-insulated gate bipolar translator (FS-IGBT), a deep energy level impurity layer (15) is injected into a terminal drift area (14); according to the deep energy level impurity layer (15), the degree of ionization of the deep energy level impurities is raised along with the raise of the temperature of the device, and the concentration of the impurities is greatly increased; when the IGBT is turned off, the hole emission efficiency of a P+ current collection area in a terminal area is effectively reduced by carrier concentration added in the terminal drift area is effectively reduced, and alpha PNP (plug-and-play) of a parasitic PNP transistor is reduced, so that high-temperature leakage current of a device is effectively reduced; and electronic concentration added in the drift area and a hole injected into the P+ current collection area are quickly compounded, and the deep energy level impurities serves as a compounding center, so that the compounding of the electronic hole is quickened, the on / off property is effectively improved, and the reliability of the IGBT is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices and relates to an insulated gate bipolar transistor (IGBT). Background technique [0002] IGBT not only has the advantages of high input impedance, low control power, simple driving circuit and high switching speed of MOSFET, but also has the advantages of high current density, low saturation voltage and strong current handling capacity of bipolar power transistor. Therefore, the three major characteristics of IGBT power devices are high voltage, high current, and high speed, which are unmatched by other power devices. Therefore, it is an ideal switching device in the field of power electronics. IGBT products combine three technical advantages of high frequency, high voltage, and high current. At the same time, IGBT can achieve energy saving and emission reduction, and has good environmental protection benefits. IGBT is widely used in the power field. , consumer electronics, a...

AI Technical Summary

Problems solved by technology

The biggest advantage of IGBT is that it can withstand the current impact no matter in the conduction state or in the short circuit state. The disadvantage is that the internal resistance of the high-voltage IGBT is large, resulting in large conduction loss. Multiple in series, and low tolerance for overvoltage, overheating, impact resistance, anti-interference, etc.

[0003] When the IGBT is forward-conducting, the positive gate voltage makes the channel open, and the emitter electrons flow through the channel to the drift region. Due to the forward bias of the collector, a large number of holes in the collector region flood into the drift region, and the drift region A large number of electrons have a conductance modulation effect, which can make the turn-on voltage drop of the IGBT much smaller than that of the VDMOS; when the IGBT is turned off, the gate voltage is negative voltage or zero voltage, the emitter electrons suddenly disappear, and the collector is high Voltage, a large number of holes continue to flow to the drift region, forming a large hole current, at this time the IGBT is in the reverse blocking state, due to the parasitic PNP tube α PNP As the temperature increases sharply, the leakage current of the IGBT increases significantly with the increase of temperature. High temperature and large leakage current can easily cause avalanche breakdown or even burn out of the device.

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