Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method and use of titanium-doped zinc-magnesium aluminate film

A zinc aluminate, titanium doping technology, applied in ion implantation plating, coating, electrical components and other directions, can solve the problems of single performance and poor luminescence performance of Mn materials

Inactive Publication Date: 2014-08-27
OCEANS KING LIGHTING SCI&TECH CO LTD +1
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, ZnAl 2 o 4 : Mn material has poor luminescence performance and single performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method and use of titanium-doped zinc-magnesium aluminate film
  • Preparation method and use of titanium-doped zinc-magnesium aluminate film
  • Preparation method and use of titanium-doped zinc-magnesium aluminate film

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0018] see figure 1 , showing a method for preparing a titanium-doped zinc-magnesium aluminate film according to an embodiment of the present invention, which includes the following steps:

[0019] S01: MgO powder, ZnO powder, Al 2 o 3 Powder and TiO 2 The powder is mixed according to the molar ratio x:(1-x):(1-y / 2):y, and sintered as the target material, wherein the value range of x is 0.36-0.75, and the value range of y is 0.005 ~0.06;

[0020] S02: Put the target material into the magnetron sputtering chamber, vacuumize, set the working pressure to 0.2Pa-4.5Pa, feed the mixed gas of inert gas and hydrogen, the flow rate of the mixed gas is 15sccm-30sccm, the substrate temperature The temperature is 250 ℃ ~ 750 ℃, the sputtering power is 30W ~ 200W, and the titanium doped zinc magnesium aluminate film is formed by sputtering;

[0021] In step S01, MgO powder, ZnO powder, Al 2 o 3 Powder and TiO 2 The powder is uniformly mixed according to the molar ratio x:(1-x):(1-y...

Embodiment 1

[0027] Choose ZnO powder, MgO powder, TiO with a purity of 99.99%2 Powder and Al 2 o 3 Powder, including MgO, ZnO, TiO 2 and Al 2 o 3 The masses are 20, 40.5, 98.9 and 2.4 g, respectively. After uniform mixing, high temperature sintering at 1250°C to form a Ф50×2mm ceramic target, and put the target into a vacuum chamber. Then, the quartz substrate was ultrasonically cleaned with acetone, absolute ethanol and deionized water, dried with high-purity nitrogen, and placed in a vacuum chamber. The distance between the target and the substrate is set to 75mm. Use a mechanical pump and a molecular pump to pump the vacuum of the cavity to 7.0×10 -4 Pa, the mixed gas of argon and hydrogen fed into the vacuum cavity, the gas flow rate is 25sccm, wherein the hydrogen content is 10% (volume percentage), the pressure is adjusted to 2.0Pa, the substrate temperature is set to 600°C, and the sputtering The radiation power was adjusted to 120W, and titanium-doped zinc-magnesium alumina...

Embodiment 2

[0029] Choose ZnO powder, MgO powder, TiO powder with a purity of 99.99% 2 Powder and Al 2 o 3 Powder, among them, MgO, ZnO, TiO 2 and Al 2 o 3 The masses are 14.4, 51.8, 101 and 0.4g, respectively. After uniform mixing, high temperature sintering at 1250°C to form a Ф50×2mm ceramic target, and put the target into a vacuum chamber. Then, the quartz substrate was ultrasonically cleaned with acetone, absolute ethanol and deionized water, dried with high-purity nitrogen, and placed in a vacuum chamber. The distance between the target and the substrate is set to 75mm. Use a mechanical pump and a molecular pump to pump the vacuum of the cavity to 7.0×10 -4 Pa, the mixed gas of argon and hydrogen fed into the vacuum cavity, the gas flow rate is 25 sccm, wherein the hydrogen content is 1% (volume percentage), the pressure is adjusted to 2.0Pa, the substrate temperature is set to 400 °C, and the sputtering The radiation power was adjusted to 120W, and titanium-doped zinc-magne...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Excitation wavelengthaaaaaaaaaa
Login to View More

Abstract

The invention relates to the field of semiconductor materials and discloses a titanium-doped zinc-magnesium aluminate film. The titanium-doped zinc-magnesium aluminate film has a general chemical formula of MgxZn1-xAl2-yO4: yTi, wherein x is in a range of 0.36 to 0.75 and y is in a range of 0.005 to 0.06. The invention also provides a preparation method of the titanium-doped zinc-magnesium aluminate film and a use of the titanium-doped zinc-magnesium aluminate film in a semiconductor photoelectric device.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic materials, and in particular relates to a preparation method and application of a titanium-doped zinc-magnesium aluminate thin film. Background technique [0002] Thin film electroluminescent display (TFELD) has attracted widespread attention and developed rapidly due to its advantages such as active light emission, full solid state, impact resistance, fast response, large viewing angle, wide application temperature, and simple process. The monochromatic TFELD with ZnS:Mn as the light-emitting layer has been developed and commercialized. [0003] Zinc aluminate (ZnAl 2 o 4 ) is a wide bandgap semiconductor material with a cubic spinel structure. ZnAl 2 o 4 The optical bandgap of polycrystalline powder is generally about 3.8eV ~ 3.9eV, and the chemical stability and thermal stability are very good. Due to high transparency and good electrical conductivity, ZnAl 2 o 4 It can be us...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/06C23C14/35C23C14/58H01L33/26H01L33/00
Inventor 周明杰王平陈吉星黄辉
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com