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Method for preparing dual-structure flocky ZnO-base transparent conductive thin film

A technology of transparent conductive film and double structure, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of adding process steps to anti-reflective films, achieve low manufacturing costs, avoid excessively high etching rates, and avoid poor controllability Effect

Active Publication Date: 2015-06-03
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the separate preparation of anti-reflection films requires additional process steps. How to simplify the process and reduce manufacturing costs is also of great significance to the production of solar cells.

Method used

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  • Method for preparing dual-structure flocky ZnO-base transparent conductive thin film
  • Method for preparing dual-structure flocky ZnO-base transparent conductive thin film
  • Method for preparing dual-structure flocky ZnO-base transparent conductive thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Example 1: Mix 12 mL of tetraethyl orthosilicate, 40 mL of ammonia, 28 mL of deionized water and 125 mL of ethylene glycol, and stir at room temperature with a magnetic stirrer for 8 hours; then add 12 mL of tetraethyl orthosilicate and 2mL of deionized water, continue to stir for 8 hours to obtain solution A containing large particles; mix 8mL of tetraethylorthosilicate, 14mL of ammonia, 20mL of deionized water and 150mL of ethanol, and stir for 8 hours at room temperature with a magnetic stirrer , Obtain solution B containing small particles; the difference in particle size between large particles and small particles is 250-350nm; mix solution A and solution B at a volume ratio of 1:1 for 3 hours to obtain mixed solution C; With a pulling speed of 1000 μm / s, the mixed solution C was coated on one side of the photovoltaic glass substrate, and then the solution B was coated on the other side of the photovoltaic glass substrate, and then dried at 200°C for 30 minutes; usin...

Embodiment 2

[0037] Example 2: Mix 8 mL of methyl orthosilicate, 14 mL of ammonia, 20 mL of deionized water and 150 mL of isopropanol, and stir at room temperature with a magnetic stirrer for 9 hours; then add 8 mL of methyl orthosilicate and 2 mL to Ionized water, continue to stir for 8 hours to obtain solution A containing large particles; mix 8mL of tetraethyl orthosilicate, 5mL of ammonia, 12mL of deionized water and 150mL of isopropanol, and stir for 6 hours at room temperature with a magnetic stirrer , The solution B containing small particles is obtained; the size difference between the large particles and the small particles is 250~350nm; the solution A and solution B are mixed and stirred at a volume ratio of 2:1 for 3 hours to obtain a mixed solution C; The mixed solution C was coated on one side of the photovoltaic glass substrate at a speed of 3000r / s, and then the solution B was coated on the other side of the photovoltaic glass substrate, and then dried at 150°C for 40 minutes;...

Embodiment 3

[0038] Example 3: Mix 8 mL n-butyl titanate, 12 mL ammonia, 16 mL deionized water and 150 mL ethanol, and stir at room temperature for 8 hours with a magnetic stirrer; then add 8 mL n-butyl titanate and 1 mL deionized water Water, continue to stir for 8 hours to obtain solution A containing large particles; take 4mL of n-butyl titanate, 6mL of ammonia, 10mL of deionized water and 150mL of ethanol and mix, stir at room temperature with a magnetic stirrer for 5 hours to obtain a solution containing small Solution B of particles; The difference in particle size between large particles and small particles is 250~350nm; Mix solution A and solution B in a volume ratio of 1:2 for 4 hours to obtain mixed solution C; spray mixed solution C to coat On one side of the photovoltaic glass substrate, solution B was then coated on the other side of the photovoltaic glass substrate, and then dried at 250°C for 25 minutes; the photovoltaic glass substrate was coated with mixed solution C and dri...

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Abstract

The invention discloses a method for preparing a dual-structure flocky ZnO-base transparent conductive thin film. The method comprises the following steps of: 1) obtaining a solution A with large particles; 2) obtaining a solution B with small particles; 3) mixing and stirring the solution A and the solution B to obtain a mixed solution C; 4) coating the mixed solution C on one side of a photovoltaic glass substrate, coating the solution B on the other side of the photovoltaic glass substrate, and drying the glass substrate; and 5) sputtering and depositing on one side of the photovoltaic glass substrate to form the ZnO-base transparent conductive thin film, wherein in the step 1) and the step 2), a particle source is a silicon oxide or metal oxide precursor; and a particle size difference between each large particle and each small particle is 250 to 350 nm. By the method for preparing the dual-structure flocky ZnO-base transparent conductive thin film, the dual-structure flocky ZnO-base transparent conductive thin film can be obtained on one side of the photovoltaic glass substrate without execution of wet method etching, and an anti-reflection thin film can be obtained on the other side of the photovoltaic glass substrate; and the method is easy to operate and is suitable for industrial large-scale application.

Description

Technical field [0001] The invention belongs to the technical field of transparent conductive oxide films, and specifically relates to a method for preparing a double-structure textured ZnO-based transparent conductive film. Background technique [0002] At present, thin-film solar cells play an important role in a variety of solar cells due to their low cost and low material consumption. Among them, transparent conductive oxide (TCO) films are an important part of thin-film solar cells. ZnO-based thin films have attracted more and more attention due to their excellent photoelectric performance, abundant raw materials, low price, non-toxicity, and stability under hydrogen plasma. They are used in thin-film solar cells such as copper indium gallium selenium and silicon. Wide range of applications. Because the photoelectric conversion layer of thin film solar cells is very thin and has low absorption rate of incident light, designing a textured light trapping structure on the tran...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18C23C14/35
CPCY02P70/50
Inventor 李佳黄金华鲁越晖宋伟杰兰品军
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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