High Density GaN Devices Using Island Topology
A device and island electrode technology, applied in the field of gallium nitride semiconductor-transistor and diode, can solve the problem of insufficient active area of electrode plate electrical interconnection area, and achieve the effect of improving current handling capacity
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Embodiment 1
[0028] figure 1 It is a planar structure of a nitride semiconductor device of an embodiment. figure 2 along figure 1 Part of the cross-sectional structure taken along line II-II.
[0029] Such as figure 2 As shown, the nitride semiconductor device has a nitride semiconductor layer 13 provided on a non-conductive substrate 11 with a buffer layer 12 provided therebetween. The nitride semiconductor layer 13 is composed of an undoped gallium nitride (GaN) layer 14 with a thickness of 1 μm and an undoped aluminum gallium nitride (AlGaN) layer 15 with a thickness of 25 nm. The undoped GaN layer 14 and the undoped AlGaN layer 15 are sequentially disposed on the buffer layer 12 . Two-dimensional electron gas (2DEG) is generated in the interface region between the undoped GaN layer 14 and the undoped AlGaN layer 15 to form a channel region.
[0030] figure 1 and figure 2 It is shown that the source islands 17 and the drain islands 18 are arranged on the nitride semiconduct...
Embodiment 2
[0051] Another embodiment is described below with reference to the accompanying drawings. Image 6 It is a planar structure of a nitride semiconductor device in another embodiment. Figure 7 along Image 6 Part of a cross-sectional view taken along midline VII-VII.
[0052] Such as Image 6 and Figure 7 As shown, the nitride semiconductor device of the second embodiment has a nitride semiconductor layer 63 provided on a nonconductive silicon (SiC) substrate 61 with a buffer layer 62 provided therebetween. The nitride semiconductor layer 63 is composed of an undoped gallium nitride (GaN) layer 64 with a thickness of 1 μm and an undoped aluminum gallium nitride (AlGaN) layer 65 with a thickness of 25 nm. An undoped GaN layer 64 and an undoped AlGaN layer 65 are sequentially disposed on the buffer layer 62 . Two-dimensional electron gas (2DEG) is generated at the interface region of the undoped GaN layer 64 and the undoped AlGaN layer 65 .
[0053] The anode island 67 and ...
Embodiment 3
[0065] Another exemplary embodiment will be described below with reference to the accompanying drawings. The forming process of this embodiment is similar to the processes in the previous two examples. Figure 9 It is a plan view of a part of the planar structure of the nitride semiconductor device of the third embodiment, in which a plurality of simple rectangular island electrodes adopt a tooth shape (crenulate shape). The tooth-shaped peninsula 91 of the first electrode island and the tooth-shaped peninsula 92 of the second electrode island are alternately arranged to increase the active interface area 30 of various electrodes. In these active interface regions between the first and second electrodes, a third strip-shaped electrode 93 is deposited as the gate of the nitride transistor.
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