Monocrystalline silicon flocking additive

A single-crystal silicon texturing and crystalline silicon texturing technology, which is applied in the directions of crystal growth, post-processing details, and post-processing, can solve the problems of uneven texturing size, high chemical consumption, and poor texturing repeatability. The effect of uniform texturing pyramid, reduced chemical consumption and lower production costs

Active Publication Date: 2013-02-06
JIANGSU RONGMA NEW ENERGY
View PDF4 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantages are: long time for texturing, large and uneven texturing pyramid, high requirements for the surface state of the original silicon wafer, high chemical consumption, poor texturing repeatability, uneven texturing size, resulting in low cell conversion efficiency, etc. question

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Example 1. (1) Preparation of additives: Add 5% sodium dodecylbenzenesulfonate, 10% polyphosphate, 5% lactic acid, and 8% sulfuric acid to 72% deionized water, mix well and prepare into a texture additive. (2) Prepare an alkaline texturing liquid, and dissolve potassium hydroxide in deionized water to obtain an alkaline texturing liquid, wherein the mass percentage of potassium hydroxide is 1.8%. The prepared additive is added into the texturing liquid to obtain the texturing agent. Dip the monocrystalline silicon wafer of the solar cell into the texturing agent for texturing.

Embodiment 2

[0015] Example 2. (1) Preparation of additives: Add 10% sodium dodecylbenzenesulfonate, 15% polyphosphate, 5% lactic acid, and 8% sulfuric acid to 62% deionized water, mix well and prepare into a texture additive. (2) Prepare an alkaline texturing liquid, and dissolve potassium hydroxide in deionized water to obtain an alkaline texturing liquid, wherein the mass percentage of potassium hydroxide is 1.2%. The prepared additive is added into the texturing liquid to obtain the texturing agent. Dip the monocrystalline silicon wafer of the solar cell into the texturing agent for texturing.

Embodiment 3

[0016] Example 3. (1) Preparation of additives: 20% by mass of sodium dodecylbenzenesulfonate, 18% of polyphosphate, and 5% of sulfuric acid were added to 57% of deionized water, and mixed evenly to prepare a texturing additive. (2) Prepare an alkaline texturing liquid, and dissolve potassium hydroxide in deionized water to obtain an alkaline texturing liquid, wherein the mass percentage of potassium hydroxide is 1.5%. The prepared additive is added into the texturing liquid to obtain the texturing agent. Dip the monocrystalline silicon wafer of the solar cell into the texturing agent for texturing.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a monocrystalline silicon flocking additive which is characterized by comprising the following components in percentage by mass: 5-20% of sodium dodecyl benzene sulfonate, 10-18% of polyphosphates, 0-7% of lactic acid, 2-10% of sulfuric acid and the balance of water. Compared with the prior art, the formula is simple, the flocking time is reduced, the flocking pyramid is uniform, the flocking repeatability is good, and the battery cell conversion efficiency is correspondingly improved; and moreover, the consumption of chemicals is reduced, and the production cost is lowered.

Description

[0001] technical field [0002] The invention relates to an additive in the texturing process of solar cells, in particular to an additive for texturing single crystal silicon solar cells. Background technique [0003] In the process of solar cells, in order to improve the performance and efficiency of solar cells, it is necessary to make a textured surface on the surface of the silicon wafer. The effective textured structure can make the incident sunlight reflect and refract multiple times on the surface of the silicon wafer, changing the incident light in the silicon wafer surface. The way forward in silicon. [0004] At present, the process flow of conventional solar cell production is to pre-clean the surface, remove the damaged layer by texturing and form an anti-reflection texture structure, chemically clean and dry; form uniform doping at each point on the surface of the silicon wafer through the method of liquid source diffusion. PN junction, remove the p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10
Inventor 不公告发明人
Owner JIANGSU RONGMA NEW ENERGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products