Method for extracting ion-implanted region trap concentration data of infrared focal plane detector

A technology of ion implantation area and infrared focal plane, which is applied in the field of detection of characteristic parameters of infrared detectors, can solve the problems of complex preparation of experimental samples and insufficient sampling numbers, and achieves the effects of high spatial precision, good reliability and intuition

Inactive Publication Date: 2013-02-13
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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Problems solved by technology

However, the differential Hall test is destructive, a single electrical test, and is susc

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  • Method for extracting ion-implanted region trap concentration data of infrared focal plane detector
  • Method for extracting ion-implanted region trap concentration data of infrared focal plane detector
  • Method for extracting ion-implanted region trap concentration data of infrared focal plane detector

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Embodiment Construction

[0020] The specific implementation manners of the present invention will be further described in detail below with reference to the accompanying drawings.

[0021] In this example, the laser is focused on the small-sized pn junction area through the observation of the high-magnification objective lens 4 and the CCD camera 3 of the micro-Raman spectrometer, and the stepping stage controller 9 drives the Dewar 5 on the two-dimensional micro-moving platform 6 The sample moves so that the laser beam scans along the center line of the pn junction, the temperature controller 8 adjusts the temperature of the sample in the Dewar 5, and the current signals are drawn out respectively through the two remote p-region test electrodes, and the lock-in amplifier 7 reads out the weak current Signal, the self-programming will record the data of scanning steps and current, and finally process the data to obtain the effective photosensitive element area size at different temperatures.

[0022] S...

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Abstract

The invention discloses a method for extracting ion-implanted region trap concentration data of an infrared focal plane detector. The method comprises the following steps of: performing one-dimensional linear scanning on a pn junction photosensitive element array based on the principle that a photon-generated carrier is generated on a tellurium-cadmium-mercury material through laser irradiation, diffused to a pn junction formed among an ion-implanted n region, a mercury interstitial diffusion region and a p absorption region and separated by a junction electric field so as to form a photocurrent signal, and obtaining a relation curve between the current and position under different temperature conditions, wherein the curve has two pairs of photocurrent peaks, and the distance between peaks of the curve refers to the junction region width of a photosensitive element and the position of the pn junction; and combining numerical simulation, and extracting and obtaining the effective trap concentration of the ion-implanted region at different temperatures. The method has significance for judging the quality of materials in the ion-implanted region of a long-wave tellurium-cadmium-mercury infrared detector.

Description

technical field [0001] The invention relates to a detection technology of characteristic parameters of an infrared detector, in particular to a method for extracting trap concentration data in an ion implantation area of ​​a mercury cadmium telluride infrared focal plane detector photosensitive chip array. Background technique [0002] HgCdTe infrared detectors have important application value in the fields of military reconnaissance and aerospace remote sensing, and have high requirements on device performance. Planar HgCdTe infrared detectors generally use ion implantation to form the n-region, but ion implantation will cause a large amount of damage to the HgCdTe n-region, forming traps in the photosensitive element region of the device. The traps can not only form dark current in the way of trap-assisted tunneling, but also form recombination centers to recombine photogenerated carriers, which greatly reduces the quantum efficiency of devices and detectors. Obtaining ac...

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Application Information

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IPC IPC(8): G01M11/00
Inventor 胡伟达叶振华梁健郭楠李天信殷菲张波崔昊杨陈效双陆卫
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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