A method for cleaning and texturing silicon wafers of solar cells

A technology for solar cells and silicon wafers, applied in chemical instruments and methods, circuits, electrical components, etc., can solve the problems of poor film quality, difficulty in obtaining uniform amorphous silicon films, low battery conversion efficiency, etc., to achieve simple operation, low cost effect

Active Publication Date: 2015-09-16
JIANGSU WANJI DRIVE SCI & TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the sharp peak of this structure, it is easy to cause unfavorable factors such as plasma discharge during the deposition of the amorphous silicon film, making it difficult to obtain a uniformly deposited amorphous silicon film, resulting in poor film quality and low battery conversion efficiency.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] (1) Put qualified silicon wafers in NH 4 OH and H 2 o 2 pre-cleaned in an aqueous solution, NH 4 OH and H 2 o 2 The solubility of the solution is 2% and 3% respectively; the solution temperature of pre-cleaning is controlled at 85 ℃, the time of pre-cleaning is 12 minutes, rinses with deionized water for 5 minutes after pre-cleaning;

[0033] (2) Put the pre-cleaned silicon wafer into NaOH aqueous solution with a solubility of 2% for etching treatment to remove the damaged layer. The processing temperature is 85°C, and the processing time is 5 minutes. Rinse with deionized water after removing the damaged layer 5 minutes;

[0034] (3) Place the silicon wafer after removing the damaged layer in HF aqueous solution with a solubility of 10%, and perform etching and corrosion treatment on the surface oxide layer to remove the silicon oxide layer. The etching temperature is 25°C, and the etching time is 5 minutes. Rinse with deionized water for 5 minutes;

[0035](4) ...

Embodiment 2

[0045] (1) Put qualified silicon wafers in NH 4 OH and H 2 o 2 pre-cleaned in an aqueous solution, NH 4 OH and H 2 o 2 The solubility of the solution is 4% and 5% respectively; the temperature of the pre-cleaning solution is controlled at 60°C, the time of pre-cleaning is 10 minutes, and rinsed with deionized water for 5 minutes after pre-cleaning;

[0046] (2) Put the pre-cleaned silicon wafer into NaOH aqueous solution with a solubility of 5% to etch the damaged layer. The processing temperature is 50°C, and the processing time is 6 minutes. After removing the damaged layer, rinse with deionized water 5 minutes;

[0047] (3) Place the silicon wafer after removing the damaged layer in HF aqueous solution with a solubility of 5%, and perform etching and corrosion treatment on the surface oxide layer to remove the silicon oxide layer. The etching temperature is 25°C, and the etching time is 5 minutes. Rinse with deionized water for 5 minutes;

[0048] (4) Dry the silicon...

Embodiment 3

[0058] (1) Put qualified silicon wafers in NH 4 OH and H 2 o 2 pre-cleaned in an aqueous solution, NH 4 OH and H 2 o 2 The solubility of the solution is 5% and 6% respectively; the solution temperature of pre-cleaning is controlled at 70 ℃, the time of pre-cleaning is 8 minutes, rinses with deionized water for 5 minutes after pre-cleaning;

[0059] (2) Put the pre-cleaned silicon wafer into 10% KOH aqueous solution to etch the damaged layer. The treatment temperature is 90°C, and the treatment time is 2 minutes. After removing the damaged layer, rinse with deionized water 5 minutes;

[0060] (3) Place the silicon wafer after removing the damaged layer in HF aqueous solution with a solubility of 1%, and perform etching and corrosion treatment on the surface oxide layer to remove the silicon oxide layer. The etching temperature is 25°C, and the etching time is 5 minutes. Rinse with deionized water for 5 minutes;

[0061] (4) Dry the silicon wafer after etching and etching...

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Abstract

The invention relates to a cleaning flocking method of a solar battery, which comprises the following steps of: precleaning a silicon wafer; removing an affected layer with an alkaline solution; etching a surface oxidation layer; carrying out a drying procedure; precleaning; flocking to form a pyramid flocked surface structure; cleaning to remove organics; carrying out surface finishing for smoothing the flocked surface; cleaning to remove metal impurities; etching the surface oxidation layer; and carrying out the drying procedure. The cleaning flocking method disclosed by the invention has the advantages of easiness in operation, low cost and suitability for batch production of large-area solar batteries and can be used for more cleanly cleaning the surface of the silicon wafer; moreover, the top of the formed pyramid flocked surface is provided with a certain smooth surface, thereby being conductive to solving the problem of nonuniform deposition of an amorphous silicon membrane, which is caused by adverse factors such as point discharge in subsequent plasma deposition.

Description

technical field [0001] The invention belongs to the field of silicon chip cleaning and texturing, in particular to a silicon chip cleaning and texturing method for solar cells. Background technique [0002] Solar energy is considered to be the most promising renewable energy source. On the one hand, because the sun is everywhere, there is solar energy wherever the sun shines. On the other hand, solar energy is inexhaustible. Solar cell manufacturing methods that convert sunlight into electricity have developed rapidly in recent years, resulting in a wide variety of cells. At present, the core of large-scale development and utilization of solar photovoltaic power generation is to improve the photoelectric conversion efficiency of solar cells and reduce the production cost of solar cells. Amorphous silicon / monocrystalline silicon heterojunction solar cells with intrinsic thin layers, namely HIT solar cells, can use low-temperature amorphous silicon deposition technology below...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18C30B33/10
CPCY02P70/50
Inventor 彭铮李媛媛王巍杨磊李正平沈文忠
Owner JIANGSU WANJI DRIVE SCI & TECH CO LTD
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