A method for cleaning and texturing silicon wafers of solar cells
A technology for solar cells and silicon wafers, applied in chemical instruments and methods, circuits, electrical components, etc., can solve the problems of poor film quality, difficulty in obtaining uniform amorphous silicon films, low battery conversion efficiency, etc., to achieve simple operation, low cost effect
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Embodiment 1
[0032] (1) Put qualified silicon wafers in NH 4 OH and H 2 o 2 pre-cleaned in an aqueous solution, NH 4 OH and H 2 o 2 The solubility of the solution is 2% and 3% respectively; the solution temperature of pre-cleaning is controlled at 85 ℃, the time of pre-cleaning is 12 minutes, rinses with deionized water for 5 minutes after pre-cleaning;
[0033] (2) Put the pre-cleaned silicon wafer into NaOH aqueous solution with a solubility of 2% for etching treatment to remove the damaged layer. The processing temperature is 85°C, and the processing time is 5 minutes. Rinse with deionized water after removing the damaged layer 5 minutes;
[0034] (3) Place the silicon wafer after removing the damaged layer in HF aqueous solution with a solubility of 10%, and perform etching and corrosion treatment on the surface oxide layer to remove the silicon oxide layer. The etching temperature is 25°C, and the etching time is 5 minutes. Rinse with deionized water for 5 minutes;
[0035](4) ...
Embodiment 2
[0045] (1) Put qualified silicon wafers in NH 4 OH and H 2 o 2 pre-cleaned in an aqueous solution, NH 4 OH and H 2 o 2 The solubility of the solution is 4% and 5% respectively; the temperature of the pre-cleaning solution is controlled at 60°C, the time of pre-cleaning is 10 minutes, and rinsed with deionized water for 5 minutes after pre-cleaning;
[0046] (2) Put the pre-cleaned silicon wafer into NaOH aqueous solution with a solubility of 5% to etch the damaged layer. The processing temperature is 50°C, and the processing time is 6 minutes. After removing the damaged layer, rinse with deionized water 5 minutes;
[0047] (3) Place the silicon wafer after removing the damaged layer in HF aqueous solution with a solubility of 5%, and perform etching and corrosion treatment on the surface oxide layer to remove the silicon oxide layer. The etching temperature is 25°C, and the etching time is 5 minutes. Rinse with deionized water for 5 minutes;
[0048] (4) Dry the silicon...
Embodiment 3
[0058] (1) Put qualified silicon wafers in NH 4 OH and H 2 o 2 pre-cleaned in an aqueous solution, NH 4 OH and H 2 o 2 The solubility of the solution is 5% and 6% respectively; the solution temperature of pre-cleaning is controlled at 70 ℃, the time of pre-cleaning is 8 minutes, rinses with deionized water for 5 minutes after pre-cleaning;
[0059] (2) Put the pre-cleaned silicon wafer into 10% KOH aqueous solution to etch the damaged layer. The treatment temperature is 90°C, and the treatment time is 2 minutes. After removing the damaged layer, rinse with deionized water 5 minutes;
[0060] (3) Place the silicon wafer after removing the damaged layer in HF aqueous solution with a solubility of 1%, and perform etching and corrosion treatment on the surface oxide layer to remove the silicon oxide layer. The etching temperature is 25°C, and the etching time is 5 minutes. Rinse with deionized water for 5 minutes;
[0061] (4) Dry the silicon wafer after etching and etching...
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