Method for removing silicon and phosphorus impurities from rich-vanadium desorption liquid

Abstract

The invention discloses a method for removing silicon and phosphorus impurities from rich-vanadium desorption liquid. The method comprises the following steps that the temperature of the rich-vanadium desorption liquid is regulated to 10 DEG C to 100 DEG C; purifying agents A are added, wherein the purifying agents A are at least one kind of materials from quicklime, slaked lime and lime milk, the full reaction is carried out after the stirring, the obtained reaction liquid is filtered and washed, the primary purified rich-vanadium liquid is obtained; the pH value of the primary purified rich-vanadium liquid is regulated to 8 to 10; and purifying agents B are added, wherein the purifying agents B are magnesium chloride and / or magnesium sulfate, the full reaction is carried out after stirring, the obtained reaction liquid is filtered and washed, and the purified rich-vanadium liquid is obtained. The method has the advantages that the process steps are simple, the purification cost is low, the vanadium loss rate is low, the silicon and phosphorus removal effect is good, and the like.

Description

technical field [0001] The invention relates to a method for removing impurity elements from a vanadium-rich solution, in particular to a method for removing silicon-phosphorus impurities from a vanadium-rich desorption solution. Background technique [0002] The sodium chlorination roasting process of vanadium ore has the advantages of simple operation, less impurity content, and easy handling, but it is not supported by national policies due to its great impact on the environment. In contrast, acid leaching processes such as blank roasting or calcified roasting of vanadium ore, full wet leaching and other acid leaching processes will become the future development direction of the vanadium industry. [0003] However, during the acid leaching process of vanadium ore, a large amount of silicon and phosphorus impurities will enter the acid leaching solution. In the process of enriching vanadium by anion resin exchange method, anion impurities such as silicon and phosphorus are...

AI Technical Summary

Problems solved by technology

Otherwise, the residual silicon and phosphorus impurities will also seriously affect the quality of the product after vanadium precipitation in the high-concentration vanadium desorption solution

[0004] There are two technical ideas for the removal of silicon-phosphorus impurities: one is to remove silicon-phosphorus impurities from the leaching solution before entering the resin exchange process, but this method has the disadvantages of excessive pH value adjustment, high alkali consumption cost, and large solution processing volume. The disadvantages such as large amount of slag and large loss rate of vanadium are generated; the second is to remove silicon and phosphorus from the resin desorption solution. The traditional method is to use calcium chloride and magnesium chloride alone. 4 2- 、H 2 PO 4 - Exists in the form, and in this form is adsorbed on the resin and desorbed, in the desorption liquid, the hydrogen radical in the phosphorus impurity will react with NaOH to consume a large amount of alkali; and because HPO 4 2- 、H 2 PO 4 - A wide pH range exists, which makes it possible to still have a large amount of HPO in the desorption solution 4 2- 、H 2 PO 4 - Ions; in the process of adding magnesium chloride or calcium chloride to purify and remove silicon and phosphorus, a large amount of hydrogen ions will be released to lower the pH value; in order to maintain the stability of the pH value, a large amount of alkali needs to be added. The traditional method uses caustic soda or soda ash to adjust the pH value , resulting in an increase in processing costs

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