Method for removing silicon and phosphorus impurities from rich-vanadium desorption liquid

A technology of desorption liquid and silicon phosphorus, which is applied in the direction of improving process efficiency, can solve the problems of excessive pH value adjustment, affecting product quality, and large solution processing volume, so as to reduce the amount of addition, reduce the burden of washing, and improve the process. simple effect

Active Publication Date: 2014-06-04
CHANGSHA RES INST OF MINING & METALLURGY
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Problems solved by technology

Otherwise, the residual silicon and phosphorus impurities will also seriously affect the quality of the product after vanadium precipitation in the high-concentration vanadium desorption solution
[0004] There are two technical ideas for the removal of silicon-phosphorus impurities: one is to remove silicon-phosphorus impurities from the leaching solution before entering the resin exchange process, but this method has the disadvantages of excessive pH value adjustment, high alkali consumption cost, and large solution processing volume. The disadvantages such as large amount of slag and large loss rate of vanadium are generated; the second is to remove silicon and phosphorus from the resin desorption solution. The traditional method is to use calcium chloride and magnesium chloride alone. 4 2- 、H 2 PO 4 - Exists in the form, and in this form is adsorbed on the resin and desorbed, in the desorption liquid, the hydrogen radical in the phosphorus impurity will react with NaOH to consume a large amount of alkali; and because HPO 4 2- 、H 2 PO 4 - A wide pH range exists, which makes it possible to still have a large amount of HPO in the desorption solution 4 2- 、H 2 PO 4 - Ions; in the process of adding magnesium chloride or calcium chloride to purify and remove silicon and phosphorus, a large amount of hydrogen ions will be released to lower the pH value; in order to maintain the stability of the pH value, a large amount of alkali needs to be added. The traditional method uses caustic soda or soda ash to adjust the pH value , resulting in an increase in processing costs

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  • Method for removing silicon and phosphorus impurities from rich-vanadium desorption liquid

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Embodiment 1

[0026] a kind of like figure 1 Shown the method for removing silicon phosphorus impurity from rich vanadium desorption liquid of the present invention, the rich vanadium desorption liquid to be treated is the rich vanadium high silicon phosphorus desorption liquid that desorbs from anion adsorption resin, wherein contains [V 2 o 5 ]62.37g / L, [P]12.29g / L and [SiO 2 ] 5.66g / L, pH is 5.2. The method specifically includes the following steps:

[0027] (1) Add 3L of the above-mentioned vanadium-rich desorption solution into a 5L mixing tank, and adjust the temperature of the vanadium-rich desorption solution to about 50°C;

[0028] (2) Add 250ml of lime emulsion (containing Ca(OH) 2 about 150g, which is about 0.85 times the required theoretical amount), after stirring, let it fully react at room temperature for 2 hours, vacuum filter the resulting reaction solution, rinse with 500ml of water, and obtain 415g of wet residue, and obtain a purified vanadium-enriched solution 3475...

Embodiment 2

[0033] a kind of like figure 1 Shown the method for removing silicon phosphorus impurity from rich vanadium desorption liquid of the present invention, the rich vanadium desorption liquid to be treated is the rich vanadium high silicon phosphorus desorption liquid that desorbs from anion adsorption resin, wherein contains [V 2 o 5 ]62.37g / L, [P]12.29g / L and [SiO 2 ] 5.66g / L, pH is 5.2. The method specifically includes the following steps:

[0034] (1) Add 60L of the above-mentioned vanadium-rich desorption solution into a 100L mixing tank, and adjust the temperature of the vanadium-rich desorption solution to about 30°C;

[0035] (2) Add 5L of lime emulsion (containing Ca(OH) 2 about 3.0kg, which is about 0.85 times the required theoretical amount), after stirring, let it fully react at room temperature for 2 hours, vacuum filter the resulting reaction solution, rinse with 10L of water, and obtain 8.25kg of wet residue, which is a purified rich Vanadium liquid 69.5L, whic...

Embodiment 3

[0040] a kind of like figure 1 Shown the method for removing silicon phosphorus impurity from rich vanadium desorption liquid of the present invention, the rich vanadium desorption liquid to be treated is the rich vanadium high silicon phosphorus desorption liquid that desorbs from anion adsorption resin, wherein contains [V 2 o 5 ]62.37g / L, [P]12.29g / L and [SiO 2 ] 5.66g / L, pH is 5.2. The method specifically includes the following steps:

[0041] (1) at 23m 3 Add 15.0m of the above vanadium-rich desorption solution into the stirring tank 3 , the temperature of the vanadium-rich desorption solution is 20°C;

[0042] (2) Add 1.2 m of lime emulsion 3 (with Ca(OH) 2 about 750kg, which is about 0.85 times of the required theoretical amount), after stirring, it is fully reacted at room temperature for 3 hours, and the resulting reaction solution is vacuum filtered, and the 3 After rinsing with clean water, 2050kg of wet slag was obtained, and 17.5 m of vanadium-enriched liq...

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Abstract

The invention discloses a method for removing silicon and phosphorus impurities from rich-vanadium desorption liquid. The method comprises the following steps that the temperature of the rich-vanadium desorption liquid is regulated to 10 DEG C to 100 DEG C; purifying agents A are added, wherein the purifying agents A are at least one kind of materials from quicklime, slaked lime and lime milk, the full reaction is carried out after the stirring, the obtained reaction liquid is filtered and washed, the primary purified rich-vanadium liquid is obtained; the pH value of the primary purified rich-vanadium liquid is regulated to 8 to 10; and purifying agents B are added, wherein the purifying agents B are magnesium chloride and / or magnesium sulfate, the full reaction is carried out after stirring, the obtained reaction liquid is filtered and washed, and the purified rich-vanadium liquid is obtained. The method has the advantages that the process steps are simple, the purification cost is low, the vanadium loss rate is low, the silicon and phosphorus removal effect is good, and the like.

Description

technical field [0001] The invention relates to a method for removing impurity elements from a vanadium-rich solution, in particular to a method for removing silicon-phosphorus impurities from a vanadium-rich desorption solution. Background technique [0002] The sodium chlorination roasting process of vanadium ore has the advantages of simple operation, less impurity content, and easy handling, but it is not supported by national policies due to its great impact on the environment. In contrast, acid leaching processes such as blank roasting or calcified roasting of vanadium ore, full wet leaching and other acid leaching processes will become the future development direction of the vanadium industry. [0003] However, during the acid leaching process of vanadium ore, a large amount of silicon and phosphorus impurities will enter the acid leaching solution. In the process of enriching vanadium by anion resin exchange method, anion impurities such as silicon and phosphorus are...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22B3/44C22B34/22
CPCY02P10/20
Inventor 封志敏宁顺明佘宗华邢学永王文娟万洪强赵强吴江华陈文勇刘建忠
Owner CHANGSHA RES INST OF MINING & METALLURGY
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