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Complementary type resistive random access memory and production method thereof

A resistive variable memory and complementary technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as complex structure and preparation method, and achieve the effects of reducing device cost, increasing storage density, and high compatibility

Inactive Publication Date: 2013-02-27
TSINGHUA UNIV
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  • Description
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  • Application Information

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Problems solved by technology

Titanium dioxide-based resistive variable memory has attracted the attention of top international research institutions such as HP and Samsung due to its excellent performance. More than three layers of structure

Method used

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  • Complementary type resistive random access memory and production method thereof
  • Complementary type resistive random access memory and production method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] figure 1 The specific preparation process of the complementary RRAM includes the following specific steps:

[0038] Step 1: Using the method of magnetron sputtering (reaction conditions: the sputtering atmosphere is a mixed gas of 0.25Pa argon and 0.15Pa nitrogen, metal titanium is the target material, the substrate temperature is 300°C, and the sputtering power is 200W) in A titanium nitride film (1) is grown on a thermally oxidized silicon dioxide / silicon substrate with a thickness of 150nm.

[0039] Step 2: Use the method of plasma oxidation (reaction conditions: the reaction atmosphere is 40Pa of oxygen, the plate pressure is 1200V, and the radio frequency power is 300W) to generate an oxide layer on the titanium nitride film in situ, and the surface of the oxide layer is fully oxidized The titanium dioxide storage medium layer (3) has a thickness of 4nm, and under the titanium dioxide layer is a partially oxidized titanium oxynitride storage layer (2) with a thic...

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Abstract

The invention discloses a complementary type resistive random access memory and a production method thereof. The complementary type resistive random access memory sequentially comprises a bottom electrode, an oxygen storage layer, a storage medium layer and a top electrode from bottom up, wherein the titanium dioxide nanometer storage medium layer and the titanium oxynitride oxygen storage layer are prepared by plasma oxidation of a titanium nitride film. Oxygen vacancies are distributed between an upper interface and a lower interface of the nanometer storage medium layer through electric excitation so as to achieve the complementary type resistance changing function. The problem of crosstalk in a cross array of the resistive random access memory is effectively solved. The complementary type resistive random access memory has the characteristics of simple production method, low cost and the like. The production method is used for developing a nanometer nonvolatile resistive random access memory with high storage density and low power consumption.

Description

technical field [0001] The invention belongs to the technical field of new materials and microelectronics, and relates to a complementary resistive memory and a preparation method thereof. Background technique [0002] The new memory based on semiconductor technology has gradually become the leading force in the memory market, and has been widely used in the fields of computers, digital equipment and mobile storage. Traditional magnetic random dynamic memory and flash memory can no longer meet the high-density storage requirements due to their own physical size limitations. Due to its great miniaturization prospects, fast response speed, low operating power consumption and non-volatility, resistive memory has attracted the attention of domestic and foreign research institutions and well-known memory manufacturers such as HP, IBM, Samsung, SMIC, etc. Extensive attention and research by the company. [0003] The reason why resistive memory has great potential for miniaturiza...

Claims

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Application Information

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IPC IPC(8): H01L45/00G11C13/00B82Y10/00
Inventor 潘峰唐光盛曾飞陈超刘宏燕宋成
Owner TSINGHUA UNIV
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