Complementary type resistive random access memory and production method thereof

A resistive variable memory and complementary technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as complex structure and preparation method, and achieve the effects of reducing device cost, increasing storage density, and high compatibility

Inactive Publication Date: 2013-02-27
TSINGHUA UNIV
View PDF2 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Titanium dioxide-based resistive variable memory has attracted the attention of top international research

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Complementary type resistive random access memory and production method thereof
  • Complementary type resistive random access memory and production method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0036] Example 1

[0037] figure 1 The specific preparation process of the complementary resistive random access memory includes the following specific steps:

[0038] Step 1: Use magnetron sputtering method (reaction conditions: sputtering atmosphere is a mixed gas of 0.25Pa argon and 0.15Pa nitrogen, metallic titanium is the target, substrate temperature is 300℃, sputtering power is 200W) A titanium nitride film (1) is grown on a thermally oxidized silicon dioxide / silicon substrate with a thickness of 150nm.

[0039] Step 2: Use plasma oxidation method (reaction conditions: reaction atmosphere is 40Pa oxygen, plate pressure is 1200V, RF power is 300W) to generate an oxide layer in situ on the titanium nitride film, and the surface of the oxide layer is fully oxidized The titanium dioxide storage medium layer (3) has a thickness of 4nm. Below the titanium dioxide layer is a partially oxidized titanium oxynitride oxygen storage layer (2) with a thickness of 25nm.

[0040] Step 3: Us...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a complementary type resistive random access memory and a production method thereof. The complementary type resistive random access memory sequentially comprises a bottom electrode, an oxygen storage layer, a storage medium layer and a top electrode from bottom up, wherein the titanium dioxide nanometer storage medium layer and the titanium oxynitride oxygen storage layer are prepared by plasma oxidation of a titanium nitride film. Oxygen vacancies are distributed between an upper interface and a lower interface of the nanometer storage medium layer through electric excitation so as to achieve the complementary type resistance changing function. The problem of crosstalk in a cross array of the resistive random access memory is effectively solved. The complementary type resistive random access memory has the characteristics of simple production method, low cost and the like. The production method is used for developing a nanometer nonvolatile resistive random access memory with high storage density and low power consumption.

Description

technical field [0001] The invention belongs to the technical field of new materials and microelectronics, and relates to a complementary resistive memory and a preparation method thereof. Background technique [0002] The new memory based on semiconductor technology has gradually become the leading force in the memory market, and has been widely used in the fields of computers, digital equipment and mobile storage. Traditional magnetic random dynamic memory and flash memory can no longer meet the high-density storage requirements due to their own physical size limitations. Due to its great miniaturization prospects, fast response speed, low operating power consumption and non-volatility, resistive memory has attracted the attention of domestic and foreign research institutions and well-known memory manufacturers such as HP, IBM, Samsung, SMIC, etc. Extensive attention and research by the company. [0003] The reason why resistive memory has great potential for miniaturiza...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L45/00G11C13/00B82Y10/00
Inventor 潘峰唐光盛曾飞陈超刘宏燕宋成
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap