Washing agent and washing process for Solar solar cell silicon wafer washing agent and washing process thereof

Abstract

The invention relates to a solar cell silicon wafer washing agent and a washing process for a solar cell silicon wafer thereof, and belongs to the technical field of solar cell production. The solar cell silicon wafer washing agent for the solar cell silicon wafer is composed of the following constituents: 0.5% to 3% of surface active agent, 2.1% to 13% of inorganic salt, 1% to 5% of organic salt, and the rest is of deionized water. The washing process comprises the following steps of (1) mixing the surface active agent, the inorganic salt, the organic salt and the deionized water according to the percentage by weight to prepare the solar cell silicon wafer washing agent; (2) adding the deionized water of 20-25 times volume into the washing agent prepared in the step (1), and uniformly stirring to obtain the solar cell silicon wafer washing liquid; and (3) placing silicon wafers into the solar cell silicon wafer washing liquid prepared in the step (2) at normal temperature. According to the solar cell silicon wafer washing agent and the washing process for the solar cell silicon wafer disclosed by the invention, the similarity-intermiscibility theory is used for the surface contaminants of the silicon wafer, a good decontamination effect is achieved, the surface of the silicon wafer is not corroded, the quality of crystalline silicon solar cells and the rate of finished products are improved, so that the production costs of the cell is reduced.

Description

technical field [0001] The invention relates to a solar cell silicon wafer cleaning agent and a cleaning process, which is applied in the solar cell production process and belongs to the technical field of solar cell production. Background technique [0002] In the production process of monocrystalline silicon solar cells, damage layers, alkali, salt, organic pollution, metal impurities and dust will be generated on the surface of silicon wafers during the production process of monocrystalline silicon, such as slicing and cleaning. Among them, the damaged layer and metal impurities can be effectively removed during the texturing and subsequent pickling process, while the dust and organic pollution are difficult to remove during the texturing reaction, and will hinder the crystal direction corrosion of the silicon wafer surface, causing obvious color difference , increase the reflectivity, reduce the texture quality and affect the overall texture effect of the silicon wafer. ...

AI Technical Summary

Problems solved by technology

Rough polishing uses a higher concentration of sodium hydroxide solution to react with silicon wafers. Although the surface damage layer can be removed and surface pollutants can be removed to a certain extent, after rough polishing, the surface solution of silicon wafers remains more alkali, and the amount of thinning is very small. Large, difficult to control, and have a great impact on subsequent processes

The APM cleaning process uses ammonia and hydrogen peroxide for cleaning, and removes slight organic matter, surface particles and some metal pollutants through oxidation and micro-etching. Ammonia is easy to volatilize, hydrogen peroxide is easy to decompose, and needs to be continuously added. The process stability is poor and the cleaning effect is not good. completely